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    TRANSISTOR SMD 2X R Search Results

    TRANSISTOR SMD 2X R Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD 2X R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD transistor 2x sot 23

    Abstract: TRANSISTOR SMD 2X K CMBT4401
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		OT-23 CMBT4401 C-120 SMD transistor 2x sot 23 TRANSISTOR SMD 2X K CMBT4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transisto r Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		OT-23 CMBT4401 C-120 PDF

    transistor smd zc ce

    Abstract: PMBT3904VS smd "code rc" transistor MARKING CODE ZC smd transistor zc Marking Code SMD zc NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE transistor smd zc 11 transistor smd code marking 101
    Text: PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 — 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.


    Original     		PMBT3904VS OT666 PMBT3904VS PMBT3906VS PMBT3946VPN 771-PMBT3904VS115 transistor smd zc ce smd "code rc" transistor MARKING CODE ZC smd transistor zc Marking Code SMD zc NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE transistor smd zc 11 transistor smd code marking 101 PDF

    NXP SMD TRANSISTOR MARKING CODE

    Abstract: PMBT3906VS smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor
    Text: PMBT3906VS 40 V, 200 mA PNP/PNP switching transistor Rev. 01 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.


    Original     		PMBT3906VS OT666 PMBT3906VS PMBT3904VS PMBT3946VPN AEC-Q101 771-PMBT3906VS115 NXP SMD TRANSISTOR MARKING CODE smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor PDF

    250 B 340 smd Transistor

    Abstract: smd JH transistor BLA0912-250 T491D476M020AS
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		BLA0912-250 OT502A 103itions 250 B 340 smd Transistor smd JH transistor BLA0912-250 T491D476M020AS PDF

    T491D226M020AS

    Abstract: T491D476M020AS smd JH transistor
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		BLA0912-250R OT502A BLA0912-250R T491D226M020AS T491D476M020AS smd JH transistor PDF

    smd zener diode code 20w

    Abstract: rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B DB-900-100W XPD57060S
    Text: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over


    Original     		DB-900-100W PD57060S IS-95 DB-900-100W IS-54/-136 IS-95 smd zener diode code 20w rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B XPD57060S PDF

    PMBT3904M,315

    Abstract: marking code 6p smd transistor 6p smd marking code 6p
    Text: PMBT3904M 40 V, 200 mA NPN switching transistor Rev. 01 — 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 SC-101 leadless ultra small Surface-Mounted Device (SMD) plastic package.


    Original     		PMBT3904M OT883 SC-101) PMBT3906M. PMBT3904M 771-PMBT3904M315 PMBT3904M,315 marking code 6p smd transistor 6p smd marking code 6p PDF

    sym013

    Abstract: smd transistor 6q
    Text: PMBT3906M 40 V, 200 mA PNP switching transistor Rev. 01 — 22 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description PNP single switching transistor in a SOT883 SC-101 leadless ultra small Surface-Mounted Device (SMD) plastic package.


    Original     		PMBT3906M OT883 SC-101) PMBT3904M. AEC-Q101 PMBT3906M 771-PMBT3906M315 sym013 smd transistor 6q PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC114TMB SO T8 NPN resistor-equipped transistor; R1 = 10 k , R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC114TMB DFN1006B-3 OT883B) PDTA114TMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA124TMB SO T8 PNP resistor-equipped transistor; R1 = 22 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA124TMB DFN1006B-3 OT883B) PDTC124TMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA114TMB SO T8 PNP resistor-equipped transistor; R1 = 10 k , R2 = open Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA114TMB DFN1006B-3 OT883B) PDTC114TMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC124TMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC124TMB DFN1006B-3 OT883B) PDTA124TMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC144TMB SO T8 NPN resistor-equipped transistor; R1 = 47 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC144TMB DFN1006B-3 OT883B) PDTA144TMB. AEC-Q101 PDF

    PDTA143

    Abstract: No abstract text available
    Text: 83B PDTC143TMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC143TMB DFN1006B-3 OT883B) PDTA143TMB. AEC-Q101 PDTA143 PDF

    PDTC123TMB

    Abstract: No abstract text available
    Text: 83B PDTC123TMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123TMB DFN1006B-3 OT883B) PDTA123TMB. AEC-Q101 PDTC123TMB PDF

    PDTA144

    Abstract: No abstract text available
    Text: 83B PDTA144TMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA144TMB DFN1006B-3 OT883B) PDTC144TMB. AEC-Q101 PDTA144 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA115TMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA115TMB DFN1006B-3 OT883B) PDTC115TMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA143TMB DFN1006B-3 OT883B) PDTC143TMB. AEC-Q101 PDF

    PDTC123TMB

    Abstract: No abstract text available
    Text: 83B PDTA123TMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123TMB DFN1006B-3 OT883B) PDTC123TMB. AEC-Q101 PDTC123TMB PDF

    TRANSISTOR SMD MARKING CODE 2x

    Abstract: NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE
    Text: 83B BC846BMB SO T8 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		BC846BMB DFN1006B-3 OT883B) AEC-Q101 TRANSISTOR SMD MARKING CODE 2x NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA113EMB SO T8 PNP resistor-equipped transistor; R1 = 1 k , R2 = 1 k Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA113EMB DFN1006B-3 OT883B) PDTC113EMB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101 PDF