TRANSISTOR SOT103 MOSFET Search Results

TRANSISTOR SOT103 MOSFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS
TK090U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL

TRANSISTOR SOT103 MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor SOT103 Abstract: BF991 Dual-Gate Mosfet dual-gate Text: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by	Original	PDF	BF991 OT143 transistor SOT103 BF991 Dual-Gate Mosfet dual-gate
BF991 Abstract: fet MARKING g2 Marking G2 SOT-103 dual-gate sot103 transistor SOT103 mosfet Text: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by	Original	PDF	BF991 OT143 BF991 fet MARKING g2 Marking G2 SOT-103 dual-gate sot103 transistor SOT103 mosfet
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	PDF	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
BF991 Abstract: dual-gate Text: BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	PDF	BF991 BF991 dual-gate
Untitled Abstract: No abstract text available Text: BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	PDF	BF991
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
SOT103 Abstract: BF982 transistor SOT103 mosfet Transistor BF982 transistor SOT103 mosfet depletion Text: b3E D • b t S 3 c124 D D 7 M 3 Q 3 3ST N A P C / P H I L I P S SE n i C O N D ISIC3 BF982 A hOR D E T A ILE D IN FO R M ATIO N SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected,	OCR Scan	PDF	btS3c124 DD743Q3 BF982 OT103. SOT103 BF982 transistor SOT103 mosfet Transistor BF982 transistor SOT103 mosfet depletion
SOT103 Abstract: transistor SOT103 mosfet BF902 marking C1s philips mosfet Text: P H ILIP S INTER NATIONAL 41E D B 7110â2b OQEtfl'ÎS T « ¡P H IN T-31-25 Philips S em iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES • • BF902 QUICK REFERENCE DATA Short channel transistor with high ratio IYtsl:Cls	OCR Scan	PDF	T-31-25 BF902 -SOT103 SOT103 transistor SOT103 mosfet BF902 marking C1s philips mosfet
transistor SOT103 mosfet Abstract: BF902 Text: PHILIPS INTERNATIONAL 41E D 7 1 1D f l 2 b GQEbô' IS IPHIN T-31-25 Philips Sem iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES BF902 QUICK REFERENCE DATA • Short channel transistor with high ratio IY,3I:CI3 • Low noise gain-controlled	OCR Scan	PDF	T-31-25 BF902 transistor SOT103 mosfet BF902
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DbE D h b S a ^ l 001ETA2 3 A BF980 T- SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for u.h.f. applications, such as u.h.f. television tuners, with 12 V supply voltage.	OCR Scan	PDF	001ETA2 BF980
BF966 Abstract: No abstract text available Text: N ANER PHILIPS/DISCRETE ObE D • ■ bbS3T31 aQ12c17E 0 ■ ■ BF966 T'3 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	PDF	bbS3T31 aQ12c BF966 BF966
Untitled Abstract: No abstract text available Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.	OCR Scan	PDF	bbS3T31 QDE473T BF991 OT143 OT103
mosfet BF964 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DbE D fc.b53131 0012156 b • u I _ a BF964: _: T-3 I-2 S' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for v.h.f. applications in television tuners, especially in r.f. stages and mixer stages in S-channel	OCR Scan	PDF	b53131 BF964: mosfet BF964
bf964 Abstract: bf964 in vhf mixer TRANSISTOR r315 r315 TRANSISTOR mosfet BF964 PHILIPS MOSFET MARKING R315 Text: N AMER PHILIPS/DISCRETE ObE D • fc,fa53i31 0012150 h ■ _ „ B BF964; _ A_ _ T-Jt-as" SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r v.h.f. applications in television tuners, especially in r.f. stages and m ixer stages in S-channel	OCR Scan	PDF	BF964: bf964 bf964 in vhf mixer TRANSISTOR r315 r315 TRANSISTOR mosfet BF964 PHILIPS MOSFET MARKING R315

BF980 Abstract: BF980A SOT-103 transistor SOT103 mosfet Text: Tlioaab C0b7547 ITS M P H I N BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r UHF applications, such as UHF television tuners, w ith 12 V supply voltage and professional	OCR Scan	PDF	cob7547 BF980A BF980 BF980A SOT-103 transistor SOT103 mosfet
transistor mosfet bf964s Abstract: BF964S z8088 Text: 7110ÔSb D0b753M 547 IPHIN B F964S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for VHF applications in television tuners. The device is also suitable for use in professional	OCR Scan	PDF	D0b753M BF964S 7Z80879 7110aEb transistor mosfet bf964s BF964S z8088
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
W1P 59 transistor Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	PDF	197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn