BLF147
Abstract: transistor C8 4312 020 36642
Text: BLF147 VHF power MOS transistor Rev. 05 — 8 November 2006 Product data sheet 1. Product profile 1.1 General description 150 W enhancement mode vertical D-MOS power transistor for HF/VHF applications. Table 1. Typical performance Typical RF performance at Th = 25 °C in a common-source test circuit.[1]
|
Original
|
PDF
|
BLF147
BLF147
transistor C8
4312 020 36642
|
multiplier mmic
Abstract: No abstract text available
Text: CHU2277a RoHS COMPLIANT W-band Multifunction Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277a is a W-band monolithic multifunction which integrates a frequency
|
Original
|
PDF
|
CHU2277a
CHU2277a
77GHz,
DSCHU2277a6013
multiplier mmic
|
w-band
Abstract: CHU2277 mmic mar 3
Text: CHU2277 RoHS COMPLIANT W-band Multifunction Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277 is a W-band monolithic multifunction which integrates a frequency
|
Original
|
PDF
|
CHU2277
CHU2277
77GHz,
DSCHU22771074
-15-Mar
w-band
mmic mar 3
|
CHU2277
Abstract: No abstract text available
Text: CHU2277 RoHS COMPLIANT W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features n n n n n n n n n n Wide operating frequency range Low input power : 5dBm typical High output power OUT1 Auxiliary output power (OUT2) Low AM noise
|
Original
|
PDF
|
CHU2277
CHU2277
DSCHU22771074
-15-Mar
|
CHU2277
Abstract: No abstract text available
Text: CHU2277 W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features n n n n n n n n n n +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277 is a W-band monolithic multifunction which integrates a frequency
|
Original
|
PDF
|
CHU2277
CHU2277
77GHz,
DSCHU22771074
-15-Mar
|
Untitled
Abstract: No abstract text available
Text: CHU2277 RoHS COMPLIANT W-band Multifunction Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features 1 1 1 1 1 1 1 1 1 1 +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277 is a W-band monolithic
|
Original
|
PDF
|
CHU2277
CHU2277
77GHz,
DSCHU22771074
-15-Mar
|
Untitled
Abstract: No abstract text available
Text: HMC532LP4 / 532LP4E v01.0508 MMIC VCO w/ BUFFER AMPLIFIER, 7.1 - 7.9 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Ampliier for: Pout: +14 dBm • VSAT Radio Phase Noise: -103 dBc/Hz @100 KHz • Point to Point/Multipoint Radio No External Resonator Needed
|
Original
|
PDF
|
HMC532LP4
532LP4E
HMC532LP4
HMC532LP4E
|
H532
Abstract: 7.1 amplifier circuit diagram HMC532LP4 HMC532LP4E H-532
Text: HMC532LP4 / 532LP4E v01.0508 MMIC VCO w/ BUFFER AMPLIFIER, 7.1 - 7.9 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +14 dBm • VSAT Radio Phase Noise: -103 dBc/Hz @100 KHz • Point to Point/Multipoint Radio No External Resonator Needed
|
Original
|
PDF
|
HMC532LP4
532LP4E
HMC532LP4
HMC532LP4E
H532
7.1 amplifier circuit diagram
H-532
|
T 514
Abstract: HMC533LP4 HMC533LP4E
Text: HMC533LP4 / 533LP4E v00.0405 MMIC VCO w/ DIVIDE-BY-16, 23.8 - 24.8 GHz Typical Applications Features Low noise MMIC VCO w/Divide-by-16 for: Pout: +12 dBm • VSAT Radio Phase Noise: -95 dBc/Hz @100 KHz Typ. • Point to Point/Multipoint Radio No External Resonator Needed
|
Original
|
PDF
|
HMC533LP4
533LP4E
DIVIDE-BY-16,
w/Divide-by-16
HMC533LP4
HMC533LP4E
divide-by-16
perfo50-3343
T 514
|
Untitled
Abstract: No abstract text available
Text: CHU2277a RoHS COMPLIANT W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features n n n n n n n n n n n Wide operating frequency range Low input power : 5dBm typical High output power OUT1 Auxiliary output power (OUT2)
|
Original
|
PDF
|
CHU2277a
CHU2277a
DSCHU2277a6013
|
Untitled
Abstract: No abstract text available
Text: CHU2277a RoHS COMPLIANT W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277a is a W-band monolithic multifunction which integrates a frequency
|
Original
|
PDF
|
CHU2277a
CHU2277a
77GHz,
DSCHU2277a6013
|
NEC J330
Abstract: Transistor AC 51 0865 75 834 J243 nec j139 transistor 843 j122 nec j142 J119 j142 transistor j222 j330
Text: Application Note USAGE AND APPLICATION CHARACTERISTICS OF µPC2757, µPC2758, AND µPC8112, 3-V POWER SUPPLY, 1.9-GHz FREQUENCY DOWN-CONVERTER ICS FOR MOBILE COMMUNICATION Document No. P11997EJ2V0AN00 2nd edition Date Published August 1999 N CP(K) Printed in Japan
|
Original
|
PDF
|
PC2757,
PC2758,
PC8112,
P11997EJ2V0AN00
plea88-6130
NEC J330
Transistor AC 51 0865 75 834
J243
nec j139
transistor 843 j122
nec j142
J119
j142
transistor j222
j330
|
Untitled
Abstract: No abstract text available
Text: HMC513LP5 / 513LP5E v00.0405 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.43 - 11.46 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Dual Output: Fo = 10.43 - 11.46 GHz Fo/2 = 5.21 - 5.73 GHz • VSAT Radio
|
Original
|
PDF
|
HMC513LP5
513LP5E
HMC513LP5
HMC513LP5E
|
transistor tc 144
Abstract: M57713
Text: MITSUBISHI RF POWER MODULE M57713 144~148MHz, 12.5V, 17W, MOBILE SSB RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm <f> HK © l> PIN : © P in RF INPUT ®VCC1 1st. DC SUPPLY ®VBB BASE BIAS ®VCC2 2nd. DC SUPPLY ®P0 RF O UTPUT ®GND FIN H3 ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted
|
OCR Scan
|
PDF
|
M57713
148MHz,
transistor tc 144
M57713
|
|
|
transistor tc 144
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57727 144~ 148MHz, 12.5V, 37W, SSB MOBILE RADIO PIN : P in OVCCI CDVBB VCC2 ®PO ©GND : RF INPUT : 1st. DC SUPPLY : BASE BIAS r 2nd. DC SUPPLY : RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25!'C unless otherwise noted
|
OCR Scan
|
PDF
|
M57727
148MHz,
transistor tc 144
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57727 144-148MHz, 12.5V, 37W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm D> PIN : P in RF IN PU T ©VCCI 1st. DC SUPPLY VBB BASE BIAS SUPPLY ® VC C 2 2nd. DC SUPPLY ©Po RF O U TPU T © 6N D FIN H3 ABSOLUTE MAXIMUM RATINGS Tc = 25'1C unless otherwise noted
|
OCR Scan
|
PDF
|
M57727
144-148MHz,
|
2L3 transistor
Abstract: M57727 5c142
Text: MITSUBISHI RF POWER MODULE M57727 144-148MHz, 12.5V, 37W, SSB MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Pin @ vcct ®VBB ®VCC2 G N D RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN H3 ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted)
|
OCR Scan
|
PDF
|
M57727
144-148MHz,
2L3 transistor
M57727
5c142
|
m57727
Abstract: transistor tc 144 144-148MHZ power module hd- 110 Transistor SSB 148
Text: MITSUBISHI RF POWER MODULE M57727 144-148MHz, 12.5V, 37W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm [> PIN : P in : RF IN PU T ©VCC1 : 1st. DC SUPPLY VBB : BASE BIAS SUPPLY © VC C 2 : 2nd. DC SUPPLY ©PO : RF O U TPU T © G N D : FIN
|
OCR Scan
|
PDF
|
M57727
144-148MHz,
m57727
transistor tc 144
144-148MHZ
power module hd- 110
Transistor SSB 148
|
m57713
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M 57713 144-148MHz, 12.5V, 17W, SSB MOBILE RADIO BLOCK DIAGRAM PIN : B Pin (DVcci VBS @ VCC2 PO ®GND RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FiN ABSOLUTE MAXIMUM RATINGS (Tc = 2 5 tìC unless otherwise noted
|
OCR Scan
|
PDF
|
144-148MHz,
m57713
|
transistor tc 144
Abstract: M57713 Transistor SSB 148 transistor c 144 Mitsubishi transistor rf final PQ-32/9060
Text: MITSUBISHI RF POWER MODULE M57713 144-148MHz, 12.5V, 17W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © —IH- © > [> Il— © PIN : © P in : RF INPUT V C C 1 : 1st. DC SUPPLY ®VBB : BASE BIAS SUPPLY @ VCC 2 : 2nd. DC SUPPLY ®PO
|
OCR Scan
|
PDF
|
M57713
144-148MHz,
transistor tc 144
M57713
Transistor SSB 148
transistor c 144
Mitsubishi transistor rf final
PQ-32/9060
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI R F PO W ER M ODULE bSM^fiZT 0 0 1 7 1 LjS bMG • M57727 14 4-1 4 8 M H Z, O U TLIN E DRAW ING Dimensions in mm 12.5V, 37W, SSB MOBILE RADIO B L O C K D IAGRAM PIN : Pin : RF INPUT ©VCC1 : 1st. DC SU PPLY ®VBB : BASE BIAS S U PPLY ® VCC 2 : 2nd. DC S U PPLY
|
OCR Scan
|
PDF
|
M57727
|
marking code 7Gs
Abstract: 3 DG 1008 BLF147 71005 philips resistor 2322-153 SOT121 Package
Text: Product «pacification Philips Semiconductor» T -J ^ ~ /5 B L F 1 4 7 VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • 5bE D • 711Dfl2b 0DM3703 27T BIPHIN PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control
|
OCR Scan
|
PDF
|
-/5BLF147
0DM3703
OT121
BLF147
711005b
0DM3711
marking code 7Gs
3 DG 1008
BLF147
71005
philips resistor 2322-153
SOT121 Package
|
MCA114
Abstract: BLF147 MCA122 71005 k 3531 transistor transistor K 3531
Text: Philips Semiconductors bbS 3 T 31 D0 ETÔ55 M T1 • A P y Product specification BLF147 VHF power MOS transistor ~ A t 1 E R PhiA-IPS/]>ISCRETE blE » PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control
|
OCR Scan
|
PDF
|
bbS3T31
BLF147
OT121
BLF147
MCA114
MCA122
71005
k 3531 transistor
transistor K 3531
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • I bbS3T31 DDS^flSS MTl M A P * Product specification BLF147 VHF power MOS transistor - AnER PHIi-lPS/]>ISCRETE FEATURES bTE J> PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability
|
OCR Scan
|
PDF
|
bbS3T31
BLF147
OT121
MCA124
bbS3T31
|
