2SC2412KPT
Abstract: nd 16 TRANSISTOR SOT-23
Text: CHENMKO ENTERPRISE CO.,LTD 2SC2412KPT SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V * Low cob. Cob=2.0pF(Typ.) CONSTRUCTION
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2SC2412KPT
OT-23)
200mW
OT-23
2SC2412KPT
nd 16 TRANSISTOR SOT-23
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2SC2411KGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SC2411KGP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(I C=500mA)
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2SC2411KGP
OT-23)
500mA)
200mW
OT-23
2SC2411KGP
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SC2412KGP SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(I C=50mA) * Low cob. Cob=2.0pF(Typ.)
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2SC2412KGP
OT-23)
200mW
OT-23
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SOT-89 marking BC
Abstract: TRANSISTOR BC 187 pnp on TRANSISTOR BC 187 on BC 187 TRANSISTOR bc 187 npn transistor CBCX69
Text: Central CBCX68 NPN CBCX69 PNP Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS DESCRIPTION: The CENTRAL SEM ICO NDUCTO R CBCX68, C BC X69 types are complementary silicon transistor manufactured by epitaxial planar process, epoxy molded in a surface mount
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CBCX68
CBCX69
CBCX68,
OT-89
CP314/CP714,
20-February
OT-89
SOT-89 marking BC
TRANSISTOR BC 187 pnp
on TRANSISTOR BC 187
on BC 187 TRANSISTOR
bc 187 npn transistor
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Untitled
Abstract: No abstract text available
Text: Central“ CZT2000 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: TheCENTRALSEMICC NDUCTORCZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,
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CZT2000
NDUCTORCZT2000
OT-223
CHARACTERISTICS00
160mA,
100hA
160mA
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TRANSISTOR motorola 416 IC
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Prelim inary Data Sheet B ias R esistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network T h e B R T Bias Resistor Transistor contains a single transistor with a monolithic
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DTA143EE
TRANSISTOR motorola 416 IC
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.
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BUK582-60A
OT223
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK566-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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BUK566-60H
BUK566-60H
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JANTXV2N2222AUA
Abstract: transistor s71 2N2222AUA
Text: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed
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2N2222AUA
2N2222AUA
MIL-PRF-19500/255
JANTX/TXV2N2222AUA
00D31Ã
JANTXV2N2222AUA
transistor s71
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114TE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
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DTC114TE
DTC114TE
OT-416/SC-90
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transistor BR A 94
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114TE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
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DTC114TE
DTC114TE
transistor BR A 94
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KSH13003
Abstract: No abstract text available
Text: KSH13003 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • D-PAK High speed Sw itching Suitable for Sw itching R egulator M otor Control Straight Lead I.PACK, I Suffix Lead Formed for Surface M ount Applications (No Suffix)
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KSH13003
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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PHB36N06E
SQT404
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BUK481-60A
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK481-60A
OT223
13BOARD
OT223.
OT223
BUK481-60A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK464-60H
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage Rating
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BF721T1/D
BF721T1
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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PHB36N06E
SQT404
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2sc4571
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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BUK581-60A
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK581-60A
OT223
OT223.
OT223
BUK581-60A
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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OT223
BUK581-100A
OT223.
BUK581
-100A
OT223
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in
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BUK465-60A
SQT404
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KI 2222A
Abstract: transistor 2222a sot-363 MARKING l0
Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar
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CMKT2207
OT-363
150mA,
KI 2222A
transistor 2222a
sot-363 MARKING l0
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marking P268
Abstract: No abstract text available
Text: Central CZT2680 semiconductor Corp. SURFACE MOUNT NPN HIGH VOLTAGE SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching
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CZT2680
OT-223
OT-223
14-November
marking P268
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