3PN0604
Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow
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IPB100N06S3-04
IPI100N06S3-04,
IPP100N06S3-04
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
SP0001-02220
3PN0604
3PN0604
TRANSISTOR SMD MARKING CODE 04
IPB100N06S3-04
IPI100N06S3-04
IPP100N06S3-04
PG-TO263-3-2
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3PN06L04
Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
Text: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow
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IPB100N06S3L-04
IPI100N06S3L-04,
IPP100N06S3L-04
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
SP0001-02219
3PN06L04
3PN06L04
SMD code d59
TRANSISTOR SMD MARKING CODE 04
IPI100N06S3L-04
d59 smd
IPB100N06S3L-04
IPP100N06S3L-04
PG-TO263-3-2
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6r385P
Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description
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IPL60R385CP
150mm²
6r385P
IPL60R385CP
JESD22
EL series small size SMD transistor
infineon msl
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BFP540
Abstract: Transistor BFP540 BGB540 GPS05605 T0559
Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,
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D-81541
BGB540
BGB540
BFP540.
GPS05605
BFP540
Transistor BFP540
GPS05605
T0559
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PEMB10
Abstract: PEMB1
Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMD10; PUMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Jun 27 2003 Nov 04 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors;
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PEMD10;
PUMD10
PEMD10
SCA75
R75/04/pp9
PEMB10
PEMB1
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PMSS3904
Abstract: PMSS3906
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 1999 May 27 NXP Semiconductors Product data sheet NPN switching transistor PMSS3904 FEATURES PINNING • Low current max. 100 mA
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M3D187
PMSS3904
SC-70
OT323)
PMSS3906.
115002/04/pp7
PMSS3904
PMSS3906
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 1999 May 27 NXP Semiconductors Product data sheet NPN switching transistor PMSS3904 PINNING FEATURES • Low current max. 100 mA
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M3D187
PMSS3904
SC-70
OT323)
PMSS3906.
115002/04/pp7
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BP317
Abstract: PMSS3904 PMSS3906
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMSS3904 NPN switching transistor Product specification Supersedes data of 1997 Sep 03 1999 May 27 Philips Semiconductors Product specification NPN switching transistor PMSS3904 FEATURES PINNING • Low current max. 100 mA
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M3D187
PMSS3904
SC-70
OT323)
PMSS3906.
115002/04/pp8
BP317
PMSS3904
PMSS3906
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SLo 380 R
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC618 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jul 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor BC618 FEATURES
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BC618
115002/00/03/pp8
SLo 380 R
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bvc62
Abstract: STR 734
Text: DISCRETE SEMICONDUCTORS IM TÂ mH T BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1996 Jul 26 PHILIPS Philips Semiconductors Product specification
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BLV859
SC08a
OT262B
SCA51
127041/1200/02/pp16
bvc62
STR 734
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ulm 2003
Abstract: ulm 2004 ULN2003 current buffer ULN2003 PIN configuration uln2003 buffer ULN2003N ULN2003 equivalent ULN2003 ULN2003 ac ULN2004N
Text: ULN2003/04 Signetics High V o lta g e /H ig h Current Darlington Transistor Arrays Product Specification L in e a r P r o d u c t s D E S C R IP T IO N These high voltage, high current Darling ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a
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ULN2003/04
600mA
ULN2003
ULN2004
ULN2004
ULN2003
ulm 2003
ulm 2004
ULN2003 current buffer
ULN2003 PIN configuration
uln2003 buffer
ULN2003N
ULN2003 equivalent
ULN2003 ac
ULN2004N
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EN4094
Abstract: No abstract text available
Text: SA NY O S E M I C O N D U C T O R CORP Ordering number: EN4094 b3E D • 7n7D7b D Q l E M ô b 04Ô * T S A J I Monolithic Digital 1C SÄWO LB1741 No. 4094 Octal NPN Darlington-pair Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor
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EN4094
LB1741
LB1741
18-pin
EN4094
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BD131
Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
Text: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.
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BD131
711005b
Q0427faD
OT-32
BD132.
O-126
OT-32)
D1891
D1687
TRANSISTOR D 1979
NPN POWER TRANSISTOR SOT-32
BD132
IEC134
Xpert
transistor Bd132
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sot23 ria marking
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Sep 04 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor BSS64 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 80 V).
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BSS64
BSS63.
MAM255
115002/00/04/pp8
sot23 ria marking
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Untitled
Abstract: No abstract text available
Text: TO SH IBA GT60M104 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 6 0 M 1 04 HIGH POW ER SW ITCHING APPLICATIONS U nit in mm High Input Impedance High Speed : tf= 0 .4 /is Max. Low Saturation Voltage : V q e (sat) = 3 '7 v (Max.)
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GT60M104
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10N25
Abstract: No abstract text available
Text: MOTOROLA SC 14E D X S T R S /R F b 3 b 7 a s 4 0 010 04 4 4 1 r - 3 Ÿ - / 3 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM10N25 MTP10N25 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 10 AMPERES
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MTM10N25
MTP10N25
0J570
19XACE
30i0012
TQ-204AA
21A-04
O-220AB
10N25
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E3V3-R81
Abstract: E3V3-R61 E3V3-T61 E3V3-D62 E3V3-D82 E3V3-T81 e3v3-r81-m3j E3V3-D61 E3V3-D81 E39-RSA
Text: 05/04/100 TIME: 11:23 FROM: 020 8450 8087 Omron TO: 0113 2794449 PAGE: 002-013 7 ,2 1 - 3 Í D .2 I i & k f omRon Built-in Amplifier Photoelectric Sensor E 3V 3 Easy-to-use, Low-cost Photoelectric Sensor • Incorporating indicators that can be clearly seen
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91/368/EEC,
E238-E1-1
0795-3M
E3V3-R81
E3V3-R61
E3V3-T61
E3V3-D62
E3V3-D82
E3V3-T81
e3v3-r81-m3j
E3V3-D61
E3V3-D81
E39-RSA
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TRANSISTOR 185 846
Abstract: K 2225 transistor diode rj 93 kd62
Text: POÜJEREX INC m NBŒ X 3*\Z D • 7S b S 1 GDDMS'IM Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 92 5-7 272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43)41.14.14 7 mPRX T '22-25' KD624530 Dual Darlington
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BP107,
KD624530
Amperes/600
BP107
KD624S30
TRANSISTOR 185 846
K 2225 transistor
diode rj 93
kd62
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230Z
Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
Text: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB
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h427414
T-33-T-
NEL2300
Emitterj17
bHS7414
V3301
-r-33
NEL230353
230Z
V3301
NEL230253
L230C
NEL2301
NEL2302
NEL2303
2SG 111
TRANSISTOR 2SG 111
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SMD TRANSISTOR MARKING P28
Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
Text: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes
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5962-R053-94.
SMD TRANSISTOR MARKING P28
SMD transistor MARKING CODE g23
TRANSISTOR SMD MARKING CODE kn
SMD MARKING CODE P28
g23 SMD Transistor
5962-8950303GC
smd transistor marking G23
5962-8950303PA
gu32
SMD TRANSISTOR MARKING jf
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62003F
Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F
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40Series,
226Devices)
62003P/PA
2003A
2004A
62003F/FB/
62004F/FB/
16bit
TB62705BF
DIP24
62003F
62004f
62004A
TD62801P
62004AP
A 107 transistor
TD62XXX
62c852
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transistor s250
Abstract: photo diode motion sensor Photo Gap Detector
Text: SILICON SENSOR S INC 75 DE 1 0253^52 8253922 SILICON ¿ENSQRS INC TTJ□ □ 11 si SILICON SENSORS, INC. Highway 18 East Dodgeville, Wisconsin 53533 Telephone: 608 935-2707 0000374 7ëc 00374 5 D optical switch SSOS-800 SSOS-700 SSQS-700 SS0S-800 TECHNICAL BULLETIN
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SSOS-700
SSOS-800
SSQS-700
SS0S-800
SSQS-700
transistor s250
photo diode motion sensor
Photo Gap Detector
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BU1708AX
Abstract: 7DFL
Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.
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BU1708AX
QD77S3S
f-rs54]
OT186A;
OT186
007753b
BU1708AX
7DFL
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lem HA
Abstract: BU1708AX
Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.
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BU1708AX
OT186A;
OT186
007753b
lem HA
BU1708AX
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