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    TRANSISTOR TE 468 Search Results

    TRANSISTOR TE 468 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TE 468 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NEC 1357

    Abstract: LA 8873 TRANSISTOR C 4460
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


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    2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460 PDF

    SN 4931

    Abstract: 2sc 3476 2SC 1885 SN 4931 N
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


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    2SC5005 2SC5005 SN 4931 2sc 3476 2SC 1885 SN 4931 N PDF

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


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    2SC5004 D 1437 transistor PDF

    4216td

    Abstract: 10peration SMP3N50F
    Text: SMP3N50F fT S iE c o n ix JLm in c o r p o r a te d N-Channel Enhancement Mode Transistor Fast Reverse Recovery TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d trr (V) (ft) (A) (n s ) 500 3.0 2.5 250 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE


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    SMP3N50F -220A 4216td 10peration SMP3N50F PDF

    BLV80-28

    Abstract: cef 473 10J2 Ceramic Capacitors 2222 372 philips
    Text: bTE D N AMER PHILIPS/DISCRETE • bbS3R31 DOETIGI ^54 I IAPX I BLV 80/28 V.H.F. POWER TRANSISTOR N-P-N silico n planar epitaxial tra n sisto r p rim a rily intended fo r use in base stations in th e v.h .f. m ob ile radio band. Features: • • m ulti-base s tructu re and diffuse d e m itte r ballasting resistors fo r an o p tim u m te m perature p ro file ;


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    bbS3R31 BLV80/28 OT-121 G02TltH BLV80-28 cef 473 10J2 Ceramic Capacitors 2222 372 philips PDF

    2SC752

    Abstract: 2sc752 k ATIC80 FPC-20 CX513 2sC752 transistor LT 752 CL25 fs3 npn transistor 2sC752
    Text: ' j ' J 3 y N P N T ¥ 5> * ì > ? \ ; 7 [ s - + B ^ y V Z 9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR O «-J-ttJHftJB. Utr-stm o U l t r a H ig h S p e e d S w i t c h i n g A p p l i c a t i o n s , o C o m p u te r , C o u n t o r A p p l i c a t i o n s .


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    400MHz 2sc752Â 2SC752 2sc752 k ATIC80 FPC-20 CX513 2sC752 transistor LT 752 CL25 fs3 npn transistor 2sC752 PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


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    2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK444-200A/B -200B OT186 PDF

    QM200DY-2H

    Abstract: No abstract text available
    Text: i MITSUBISHI TRANSISTOR MODULES i HIGH POWER SWITCHING USE ; QM200DY-2H | INSULATED TYPE QM200DY-2H APPLICATION Inverters, Servo drivers, DC m otor controllers, NC equipm ent, W elders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tab# 110, 1=0 5 2 - 464


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    QM200DY-2H QM200DY-2H PDF

    27N10E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S h ee t TMOS E-FET ™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM O S P O W E R FET T h is a d v a n c e d T M O S p o w e r F E T is d e s ig n e d to w ith s ta n d h ig h


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    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    2N33904

    Abstract: stackpole 24b curves 2n3904 npn fairchild beta stackpole ferrite 24B rc4191 ferrite pot core mini inverter circuit schematic diagram NY TRANSISTOR MAKING LIST Siemens Ferrite n27 1N914
    Text: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RC4391 In v e r tin g and S te p - D o w n S w i t c h i n g R e g u la to r Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage


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    RC4391 RC4391 DS30004391 2N33904 stackpole 24b curves 2n3904 npn fairchild beta stackpole ferrite 24B rc4191 ferrite pot core mini inverter circuit schematic diagram NY TRANSISTOR MAKING LIST Siemens Ferrite n27 1N914 PDF

    d2625

    Abstract: TRANSISTOR D2625 SLRS023A-D2625 SN75466 darlington pair transistor SN75467 diagram DARLINGTON kd 617 SN75466 APPLICATION SN75469
    Text: SN75466 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023A- D2625, DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output • High-Voltage Outputs. . . 100 V • Output Clamp Diodes


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    SN75466 SN75469 SLRS023A D2625, 500-mA ULN2001A, ULN2002A, ULN2003A, ULN2004A, SN75466, d2625 TRANSISTOR D2625 SLRS023A-D2625 darlington pair transistor SN75467 diagram DARLINGTON kd 617 SN75466 APPLICATION SN75469 PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    bubble memory

    Abstract: Non-Volatile Random Access Memory nvrams magnetic bubble memories
    Text: ARTICLE REPRINT AR-468 Keeping data sale with nonvolatile memory The author sorts out the myriad nonvolatile memory options available, including ROMs, PROMs, EPROMs, EsPROMs, NVRAMs, plus others. T erry Kendall Technical Marketing Engineer Memory Com ponents Div.


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    AR-468 16-bit bubble memory Non-Volatile Random Access Memory nvrams magnetic bubble memories PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MOUNTING KITS • COMPLETE KITS OR INDIVIDUAL HARDWARE • PRE PACKAGED • UNIFORM HARDWARE AT LOW COST These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to securely mount the semiconductor to the chassis. Purchase the complete kit consisting of all hardware


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    4468A

    Abstract: C2024 transistor A00390 FR 9024 IC 4468 2SB1295 LA3235W LA4590W SQFP-48 ac din hfe nv
    Text: Ordering n u m b e r:EN 4 468A Monolithic Linear 1C N0.4468A // SA \YO LA4590W 1.5 V Stereo Headphone Preamplifier and Power Amplifier i Overview Package Dimensions T he L A 4590W is a system IC that collects the functions unit: m m required for a playback set in a single chip, and reduces


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    LA4590W LA4590W LA3235W. 4468A C2024 transistor A00390 FR 9024 IC 4468 2SB1295 LA3235W SQFP-48 ac din hfe nv PDF

    LZ22251

    Abstract: 3 pin IR sensor circuit transister
    Text: SHARP ELEK/ MELEC DIV 1 SE 0 I 81807=10 O Q Ü lS a S S I LZ22251 B /W CCD Area Sensor T-41-55 LZ22251 • B/W CCD Area Sensor ■ Description LZ22251 is a 2/3 inch solid-state image sensor composed of PN photodiodes and CCDs chargecoupled device . With its approximately 250,000 pix­


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    GD015Ã LZ22251 T-41-55 22-rginnr-innnrjirhr LZ22251 T-41-55 899eai 9Z00SQ 3 pin IR sensor circuit transister PDF

    IS1588

    Abstract: No abstract text available
    Text: LOW POWER SWITCHING REGULATOR NJM2352 T h e N JM 2352 is th e in d u s try ’s first m o n o lith ic low p o w e r sw itching re g u la to rs availab le in an 8 -lead m in i-D IP , and de sign ed specifically fo r b a tte ry o p e ra te d in stru m e n ts. T h e y each c o n ta in a 1.3V te m p e ra tu re c o m p e n sa te d b a n d g a p re fe r­


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    NJM2352 EK-14, IS1588 PDF

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071 PDF

    transistor NEC D 822 P

    Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624 PDF

    TRIAC RCA ca3058

    Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
    Text: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of


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    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175 PDF