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    TRANSISTOR THEMAL Search Results

    TRANSISTOR THEMAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR THEMAL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    63a17

    Abstract: FDT439N SOT223
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N 63a17 FDT439N SOT223 PDF

    CBVK741B019

    Abstract: F63TNR F852 FDT439N PN2222A 63a30
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N CBVK741B019 F63TNR F852 FDT439N PN2222A 63a30 PDF

    F852 transistor

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N F852 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N PDF

    FDD603AL

    Abstract: No abstract text available
    Text: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD603AL FDD603AL PDF

    CBVK741B019

    Abstract: F63TNR FDD603AL FDD6680
    Text: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD603AL CBVK741B019 F63TNR FDD603AL FDD6680 PDF

    NDS9933A

    Abstract: No abstract text available
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		NDS9933A NDS9933A PDF

    Untitled

    Abstract: No abstract text available
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		NDS9933A PDF

    Untitled

    Abstract: No abstract text available
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		NDS9933A PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		NDS9933A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor PDF

    FDD6030L

    Abstract: No abstract text available
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD6030L FDD6030L PDF

    FDD6030L

    Abstract: CBVK741B019 F63TNR FDD6680
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680 PDF

    Untitled

    Abstract: No abstract text available
    Text: SC806 Miniature High Current Lithium-Ion Battery Charger POWER MANAGEMENT Description Features ‹ Fully integrated charger with FET pass transistor, The SC806 is a fully integrated, single cell, constant-current cc /constant-voltage (cv) Lithium-Ion battery charger


    Original     		SC806 reached06 MLPD-10, PDF

    ZENER SINGLE COLOR CODE

    Abstract: CBVK741B019 F63TNR FDG313N FDG6302P SC70-6
    Text: FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state


    Original     		FDG313N ZENER SINGLE COLOR CODE CBVK741B019 F63TNR FDG313N FDG6302P SC70-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state


    Original     		FDG313N PDF

    FDG313N

    Abstract: SC70-6
    Text: FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state


    Original     		FDG313N FDG313N SC70-6 PDF

    SC806

    Abstract: Miniature High Current Lithium-Ion Battery Charger NTC-49 12 volts,15 amps Regulated Power Supply Schematic Diagram SC806IMLTRT
    Text: SC806 Miniature High Current Lithium-Ion Battery Charger POWER MANAGEMENT Description Features ‹ Fully integrated charger with FET pass transistor, The SC806 is a fully integrated, single cell, constant-current cc /constant-voltage (cv) Lithium-Ion battery charger


    Original     		SC806 SC806 800mA CV-100mV MLPD-10, MLPD-10 Miniature High Current Lithium-Ion Battery Charger NTC-49 12 volts,15 amps Regulated Power Supply Schematic Diagram SC806IMLTRT PDF

    Untitled

    Abstract: No abstract text available
    Text: FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state


    Original     		FDG313N PDF

    MMFT2406T1

    Abstract: MMFT2406T3 T2406 Q223
    Text: MOTOROU SEMICONDUCTOR — — TECHNICAL Order this document by MM~2406T1/D DATA Medium Power Field Effect Wansistor N-Channel Enhancement Mode Silicon Gate TMOS E-FETM SOT-223 for Surface Mount I This TMOS medium power field effect transistor is designed for


    Original     		2406T1/D OT-223 Q1-2447 602-2HMg MMH2406T1/D MMFT2406T1 MMFT2406T3 T2406 Q223 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This


    Original     		FDG314P PDF

    Untitled

    Abstract: No abstract text available
    Text: FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This


    Original     		FDG314P PDF

    603AL

    Abstract: marking 603AL transistor
    Text: EMI C O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, D M O S technology. This


    OCR Scan     		FDD603AL 603AL, 603AL marking 603AL transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description This P-Channel enhancement mode power field ef­ • -2.8 A, -20 V. RDS on = 0.14 « @ VQS = -4.5 V fect transistor is produced using Fairchild’s propri­


    OCR Scan     		NDS9933A DC/95 PDF

    2SK1252

    Abstract: transistor themal
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSffl HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER,RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • 4-Volt Gate Drive • Low Drain-Source ON Resistance : RDS(0N)= 0.42Q (Typ.)


    OCR Scan     		100/xA 10/is 2SK1252 transistor themal PDF