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    TRANSISTOR TIC 106 Search Results

    TRANSISTOR TIC 106 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIC 106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MÛi€Sr! Preliminary Specifications M an A M P com pany 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .0 0 SOT-23 Features • 1 5 dB N o ise F ig u ie a t 0 5 m A • 13 dB G a i l a t 1 G H z • 14 GH z fp • Low C o s tP la s tic P a ck a g e


    OCR Scan     		PDF MA4T6310 OT-23 4T6310

    2N4863

    Abstract: PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066
    Text: •M k / 2 ÔA oi:4.4 P I ELE CT RO NICS INC Ho * ¡M T E R IM D E | D 0 M 3 S T 2 0DDD144 S | ». nELEXTRonics r ninc. B U L L E T IN S u b j e c t to R e v i s i o n ' :.T V * POWER TRANSISTOR ENGINEERING BULLETIN^ y e 3 3 p IW i t h o u t N o tic e -, o s "


    OCR Scan     		PDF PG1050 PG1066, PG1051 PG1052 2N4863 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066

    sw 2604 ic

    Abstract: 2603 dual transistor ic sw 2604 Sw 2604 2603L
    Text: DATA SHEET PHOTOCOUPLERS PS2603, PS2604, PS2603L, PS2604L HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE 6 PIN PHOTOCOUPLER — N E P O C S e rie s — DESCRIPTION P S 2603, P S 2 604 and P S 2 603 L, P S 2 6 0 4 L are o p tic a lly co u p le d is o la to rs c o n ta in in g a G a A s light em ittin g d io d e


    OCR Scan     		PDF PS2603, PS2604, PS2603L, PS2604L sw 2604 ic 2603 dual transistor ic sw 2604 Sw 2604 2603L

    ujt firing circuits of scr

    Abstract: UJT APPLICATION scr firing circuit UJT triggering circuit ujt timer CIRCUIT applications of ujt unijunction application note ujt free Complementary UJT D5K1 ujt transistor
    Text: Complementary Unijunction Transistor □ e1 D5K1 1 C O M PLEM EN TA R Y U N IJU N C T IO N T h e G e n e ra l E le c tr ic D 5K 1 C o m p le m e n ta ry U n iju n c tio n T r a n s is t o r is a silic o n p la n a r , m o n o lith ic in te g r a te d c ir c u it. I t h a s u n iju n c tio n c h a r a c te r is tic s w ith


    OCR Scan     		PDF -15aC I0V01TI ujt firing circuits of scr UJT APPLICATION scr firing circuit UJT triggering circuit ujt timer CIRCUIT applications of ujt unijunction application note ujt free Complementary UJT D5K1 ujt transistor

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


    OCR Scan     		PDF TIP100/101/102 TIP101 TIP102 TIP100

    AF106

    Abstract: 40HHZ AF108
    Text: TG~l :-LTTT^- IT- 1-— - 5SC D m 0 2 3 S b Q S G G G H G 4 7 S « S I E G ; PNP Germanium RF Transistor SIEMENS A K T I E N G E S E L L S C H A F T . „ ~ T ' - l f - * ! ' A F 106 D - 04047 for input, mixer, and oscillator stages up to 260 MHz


    OCR Scan     		PDF Q60106-X106 120ms 23SbOS AF106 40HHZ AF108

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    transistor IR 324 C

    Abstract: transistor selection guide
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency


    OCR Scan     		PDF NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide

    GP500

    Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
    Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.


    OCR Scan     		PDF ACY33 ACY33 --Y33 Q60103 GP500 bnsu germanium af transistors Germanium Transistor transistor ACY PNP

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


    OCR Scan     		PDF 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC

    transistor tic 106 N

    Abstract: No abstract text available
    Text: S AMSUNG ELECTRONICS INC 42E MPSA42 D B OQG^ObS 1 E3SMÚK NPN EPITAXIAL SILICON TRANSISTOR s 2r \ - \ s ' HIGH VOLTAGE TRANSISTOR • C o lle c to r-E m ltte r V oltage: VCEo =300V • C o lle c to r D is s ip a tio n : P 0 m a x = 6 2 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF MPSA42 transistor tic 106 N

    UN 2911

    Abstract: No abstract text available
    Text: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 UN 2911

    level shifter . CMOS to TTL

    Abstract: msi cr 430 SSC2000 ttl inverter operation PF516
    Text: EPSON P F 5 1 6 -0 7 SSC2000 Series Standard Cell 'Built-in Analog Circuit 'Internal Two Power Supplies Level Shifter 'W ide Operating Voltage: 0.9 V to 6.0 V 'U p to 11,000 gates • DESCRIPTION The S S C 2000 series is a C M O S standard cell w ith low -threshold m anufacturing process providing low voltage


    OCR Scan     		PDF pf516-07 SSC2000 level shifter . CMOS to TTL msi cr 430 ttl inverter operation PF516

    DB 22 AR transistor smd

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and


    OCR Scan     		PDF MRF6401 MRF6401PHT/D IS21I IS12I DB 22 AR transistor smd

    BUK106-50US

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.


    OCR Scan     		PDF BUK106-50L/S BUK106-50LP/SP BUK106-50L 8UK106-50S BUK106-50US BUK106-50L/S

    BUK106-50L

    Abstract: BUK106-50S diode 06-50S
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK106-50L/S Logic level TOPFET_ BUK106-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general


    OCR Scan     		PDF BUK106-50L/S BUK106-50LP/SP BUK106-50L BUK106-50S IPS/IPS25 BUK106-50S diode 06-50S

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general


    OCR Scan     		PDF BUK104-50L/S BUK104-50LP/SP BUK104-50L BUK104-50S BUK104-50L/S UK104-50

    4-1070

    Abstract: 45N10E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r T O -2 4 7 w ith Is o la te d M ounting H ole MTW45N10E M otorola Preferred Device TMOS POWER FET 45 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		PDF fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M

    LG 21 fs 4

    Abstract: TRANSISTOR FS 10 TM
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK106-50US BUK106-50LP/SP For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic


    OCR Scan     		PDF BUK106-50US BUK106-50LP/SP BUK106-50L BUK106-50S BUK106-50L/S BUK106-50L/S LG 21 fs 4 TRANSISTOR FS 10 TM

    mm glass lens phototransistor

    Abstract: wo f6 DIODE
    Text: SIEMENS BPX43 SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm .244 (6.2) .212 (5.4) .570(1451 .492 (12.5) -U ¿0 0 (5 .1 ) 9 (4.8) V 0.100,-(2.54)'- T 0.01 * f6 (0.45) Base '‘Collector 0 .18 9(4.6) 0.181 (4.6) I-106, w .220 (5.6) .206 (5.3)


    OCR Scan     		PDF BPX43 I-106, mm glass lens phototransistor wo f6 DIODE

    transistor tic 106 N

    Abstract: bly power transistor transistor tic 226 transistor SE 431
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C


    OCR Scan     		PDF

    HA11123

    Abstract: in60p diode IN60P transistor c114 est HA-11123 TOKO fi transformer MV4FLC-20000AG Intermediate frequency transformer 455 TOKO IF Transformer 10,7MHz HIA11123
    Text: HA11123 FM /AM Radio Receiver System Hitachi HIA11123 is an IC system that has been developed for FM/AM radios and modular stereos. It has the following functions and features. • FUNCTIONS FM • IF Amp. • Signal meter drive circuit • A F C circuit • FM demodulation signal amplification circuit


    OCR Scan     		PDF HA11123 HIA11123 RMC-4256AAM) 180pF 130pF YACF-21943A CFU-60A) 42110N) RMN-41749N) HA11123 in60p diode IN60P transistor c114 est HA-11123 TOKO fi transformer MV4FLC-20000AG Intermediate frequency transformer 455 TOKO IF Transformer 10,7MHz

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES LLE18300X QUICK REFERENCE DATA D iffu se d e m itte r b a lla s tin g re s is to rs


    OCR Scan     		PDF 125002/00/03/pp12