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    TRANSISTOR TIP38C Search Results

    TRANSISTOR TIP38C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    TIP38C

    Abstract: TIP38 transistor tip38c TIP36 TIP35 TIP35 TO247 TIP36K TIP35A TIP35B TIP35C
    Text: üà MOS PEC COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS NPN TIP35 TIP35A TIP35B TIP35C . designed for use in genera! purpose power amplifier and switching applications. FEATURES: * Coilector-Emitter Sustaining Voltage VcEo *u.r 40V(Min - TIP35.TIP36 60V(Min)- TIP35A.TIP36A


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    PDF TIP35 TIP36 TIP35AJIP36A TIP35B TIP36B TIP35C TIP36C TSP36 TIP36B TIP38C TIP38 transistor tip38c TIP36 TIP35 TO247 TIP36K TIP35A