NTE124
Abstract: 325V
Text: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,
|
Original
|
PDF
|
NTE124
NTE124
100mA
10MHz
250mA,
100mA,
10MHz,
100kHz
325V
|
"PNP Transistor"
Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
|
Original
|
PDF
|
NTE226
NTE226
200mA
200mA,
"PNP Transistor"
germanium transistor pnp
GERMANIUM TRANSISTOR
pnp germanium transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
pnp transistor 6V
transistor 200ma pnp
GERMANIUM
Germanium diode data sheet
germanium pnp transistor
|
TO63 package
Abstract: NTE71
Text: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.
|
Original
|
PDF
|
NTE71
NTE71
TO63 package
|
2N5664
Abstract: 2N5664J 2N5664JV 2N5664JX
Text: 2N5664 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose high power switching • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5664J
|
Original
|
PDF
|
2N5664
MIL-PRF-19500
2N5664J)
2N5664JX)
2N5664JV)
MIL-STD-750
MIL-PRF-19500/455
2N5664
2N5664J
2N5664JV
2N5664JX
|
NTE369
Abstract: Transistor 800V
Text: NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCBO = 800V D Gain Specified to 200mA
|
Original
|
PDF
|
NTE369
NTE369
200mA
200mA,
500mA,
100mA,
Transistor 800V
|
2N5661
Abstract: 2N5661J 2N5661JV 2N5661JX
Text: 2N5661 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5661J • JANTX level (2N5661JX)
|
Original
|
PDF
|
2N5661
MIL-PRF-19500
2N5661J)
2N5661JX)
2N5661JV)
MIL-STD-750
MIL-PRF-19500/454
2N5661
2N5661J
2N5661JV
2N5661JX
|
NPN 200 VOLTS POWER TRANSISTOR
Abstract: D-333 Semicoa Semiconductor 2N5660 2N5660J 2N5660JV 2N5660JX
Text: 2N5660 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5660J • JANTX level (2N5660JX)
|
Original
|
PDF
|
2N5660
MIL-PRF-19500
2N5660J)
2N5660JX)
2N5660JV)
MIL-STD-750
MIL-PRF-19500/454
NPN 200 VOLTS POWER TRANSISTOR
D-333
Semicoa Semiconductor
2N5660
2N5660J
2N5660JV
2N5660JX
|
to63
Abstract: NTE70 180v 250w
Text: NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability.
|
Original
|
PDF
|
NTE70
NTE70
to63
180v 250w
|
transistor case To 105
Abstract: transistor case To 106 transistor sockets a 124 transistor TO-66 SOCKET TRANSISTOR 187 4634 839 transistor ASTM-D4066 TO-62
Text: 25 Transistor Sockets TO-3 Power Transistor Sockets TO-3 Transistor Sockets 1.530 1.187 .665 1.600 Max. 1.187 .665 .450 6-32 Thread 2 Pls (2) Insulating Shoulders .035 Tab 'B' Tab 'A' Heavy Duty Features an all-in-one mounting plate and solder tabs, providing complete electrical isolation of the solder tab
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
|
Original
|
PDF
|
2N4912
O-213AA)
|
2N6301
Abstract: ams 2411
Text: 2N6301 80 V - Darlington Complementary NPN Silicon Power Transistor 19.29 Transist. Page 1 of 2 Enter Your Part # Home Part Number: 2N6301 Online Store 2N6301 Diodes 80 V - Darlington Complementary NPN Silicon Power Transistors Transistor Integrated Circuits
|
Original
|
PDF
|
2N6301
2N6301
com/2n6301
ams 2411
|
2N4912
Abstract: LE17
Text: SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
|
Original
|
PDF
|
2N4912
O-213AA)
2N4912
LE17
|
Untitled
Abstract: No abstract text available
Text: 2N6316 80 V complementary NPN silicon power transistor 20.00 Transistors Transistors . Page 1 of 2 Enter Your Part # Home Part Number: 2N6316 Online Store 2N6316 Diodes 80 V complementary NPN silicon power transistor Transistors Integrated Circuits Optoelectronics
|
Original
|
PDF
|
2N6316
2N6316
com/2n6316
|
2n6318
Abstract: No abstract text available
Text: 2N6318 80 V complementary PNP silicon power transistor 8.50 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6318 Online Store 2N6318 Diodes 80 V complementary PNP silicon power transistor Transistors Integrated Circuits Optoelectronics
|
Original
|
PDF
|
2N6318
2N6318
com/2n6318
|
|
|
Untitled
Abstract: No abstract text available
Text: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-213AA
|
Original
|
PDF
|
2N6352
2N6353
MIL-PRF-19500/472
O-213AA
T4-LDS-0315,
|
TRANSFORMER 220v to 9V
Abstract: 220v 2a diode bridge NTE384 220v 20v 4a
Text: NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe–operation–area.
|
Original
|
PDF
|
NTE384
NTE384
200mA,
TRANSFORMER 220v to 9V
220v 2a diode bridge
220v 20v 4a
|
Untitled
Abstract: No abstract text available
Text: 2N6298 and 2N6299 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/540 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV
|
Original
|
PDF
|
2N6298
2N6299
MIL-PRF-19500/540
O-213AA
O-213AA
T4-LDS-0310,
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
PDF
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
2N3441
Abstract: No abstract text available
Text: ÆàMOSPEC NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Driver for High Power Outputs Series and Shunt Regulators
|
OCR Scan
|
PDF
|
2N3441
20CPC,
|
2N3441
Abstract: No abstract text available
Text: NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Boca Semiconductor Corp. BSC http ://www.bocasemi.com Driver for High Power Outputs
|
OCR Scan
|
PDF
|
2N3441
20CPC,
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
PDF
|
500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
|
2N 326 Transistor
Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV
|
OCR Scan
|
PDF
|
130CIV
109DP
O-220
104DP
CB-70
2N 326 Transistor
transistor ESM 3004
DARLINGTON ESM 30
npn 1000V 100a
ESM4016
ESM 3004
transistor BU 184
transistor ESM 3001
transistor ESM 2060T
darlington NPN 600V 8a transistor
|
1061 transistor
Abstract: c 111 transistor NPN Transistor isolated
Text: TABLE OF CONTENTS Poge Power Transistor Technology . 2 Type/Rage Locato r.
|
OCR Scan
|
PDF
|
O-39/TO-5.
O-114.
O-111.
1061 transistor
c 111 transistor
NPN Transistor isolated
|
Untitled
Abstract: No abstract text available
Text: cb y com pany Features A low cost, high quality rugged transistor socket designed for use where trouble free life is required. The combination onepiece mounting and collector allows for direct mounting of the transistor and is also effective in dissipating heat. Contacts
|
OCR Scan
|
PDF
|
MIL-S-12883/43.
|
