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    TRANSISTOR TYPE 0235 Search Results

    TRANSISTOR TYPE 0235 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TYPE 0235 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs Q62702-F42 1= B Package 2=E 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage


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    Q62702-F42 OT-23 fl535b05 500MHz fl53SLG5 D151b7Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS PNP Silicon Darlington Transistor BC 516 • High current gain • High collector current • Complementary type: BC 517 NPN Type Marking Ordering Code Pin Configuration 1 2 3 BC 516 - Q62702-C944 C B Package1) E TO-92 Maximum Ratings Parameter


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    Q62702-C944 BE35bD5 Q12D553 Q1E05E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon High-Voltage Transistor B F 622 • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F 623 PNP Type Marking Ordering Code


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    Q62702-F1052 OT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS92 Infine on technologies SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = "0'8.-2.0 V Type Vbs BSS92 -240 V Type BSS92 BSS92 BSS92 Ordering Code Q62702-S497 Q62702-S633 Q62702-S502 -0.15 A ^DS(on) Package


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    BSS92 Q62702-S497 Q62702-S633 Q62702-S502 E6288 E6296 PDF

    3904

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration


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    Q68000-A4416 OT-23 D1EE537 0235bGS fi535fc 01EBS3T 3904 PDF

    j 6910

    Abstract: transistor j 6910
    Text: S IE M E N S PNP Silicon AF Transistor • • • • • BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 NPN Type Marking Ordering Code (tape and reel) Pin Coni igura tion


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    Q62702-C2130 Q62702-C2131 Q62702-C2132 Q62702-C2133 OT-223 EHP002M fiS35fe05 j 6910 transistor j 6910 PDF

    q406 transistor

    Abstract: nf 820 transistor q406 q406 transistor data
    Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q


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    Q62702-S638 Q62702-S637 E6288 E6296 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 q406 transistor nf 820 transistor q406 q406 transistor data PDF

    TRANSISTOR ss101

    Abstract: No abstract text available
    Text: BSS101 In fin e o n tschnologie» SIPMOS 0 Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V </> Type BSS101 240 V Type BSS 101 BSS 101 Ordering Code Q62702-S493 Q62702-S636 0.13 A ^DS(on) Package Marking 16 ß


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    BSS101 Q62702-S493 Q62702-S636 SS101 E6288 E6325 S35bG5 Q133777 SQT-89 TRANSISTOR ss101 PDF

    TRANSISTOR SMD MARKING CODE kd

    Abstract: No abstract text available
    Text: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information


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    OT-223 Q67000-S306 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T TRANSISTOR SMD MARKING CODE kd PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 324 SIPM OS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 v Type VDS BSP 324 400 V Type BSP 324 Ordering Code Q67000-S215 0.1 7 A ^DS(on) Package Marking 25 a SOT-223 BSP 324 Tape and Reel Information E6327


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    Q67000-S215 OT-223 E6327 053SbOS fl235bOS 0GflbG22 D0flb023 PDF

    smd transistor A7 sot 23

    Abstract: No abstract text available
    Text: BSP 89 Inf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ^DS k> WDS(on) Package Marking BSP 89 240 V 0.36 A 6Q SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652 Tape and Reel Information


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    OT-223 Q67000-S652 E6327 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 G133771 smd transistor A7 sot 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 298 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VfeS th = 2.1 .4 .0 V Type VDS BSP 298 400 V Type BSP 298 Ordering Code Q67000-S200 0.5 A RDS(on) Package Marking 3ß SOT-223 BSP 298 Tape and Reel Information


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    Q67000-S200 OT-223 E6327 fl23SbDS flS35t GPS05560 fl53SbOS PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 315 SIPM OS Small-Signal Transistor • P channel • Enhancement mode • Logic Level ' ^GS th = -0.8.-2.0 V Type ^DS BSP 315 -50 V Type BSP 315 BSP 315 Ordering Code Q67000-S75 Q67000-S249 -1.1 A flDS(on) Package Marking 0.8 n SOT-223 BSP 315


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    Q67000-S75 Q67000-S249 OT-223 E6327 E6433 fl23SbOS fl535bOS fl53SbOS PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 299 SIPM O S Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = 2-1 - 4.0 V Type Vbs h ^DS(on) Package Marking BSP 299 500 V 0.4 A 4Q SOT-223 BSP 299 Type BSP 299 Ordering Code Q67000-S225 Tape and Reel Information


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    OT-223 Q67000-S225 E6327 0235bQ5 flS3Sb05 PDF

    smd code LGG

    Abstract: No abstract text available
    Text: BSP 88 Infineon technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS th = 0.6. 1.2V Type BSP 8 8 Type BSP 8 8 ^bs h> 240 V 0.32 A Ordering Code Q67000-S070 ^DS(on) 8 Q Package Marking SOT-223 BSP 88 Tape and Reel Information


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    Q67000-S070 OT-223 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd code LGG PDF

    smd transistor 7002

    Abstract: smd 7002 marking code sSG SOT23
    Text: SN 7002 In fin e o n technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level • W = ° - 8- 2-0V Type Vqs b ^DS on) Package Marking SN 7002 60 V 0.19 A 5Q SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 Tape and Reel Information


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    OT-23 Q67000-S063 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd transistor 7002 smd 7002 marking code sSG SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    Q62702-F1489 OT-323 Q122QS3 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s


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    Q62702-F1681 OT-323 0122E04 900MHz D1525D5 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS 100 In fin e o n taehnologifts SIPMOS Small-Slgnal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Type Vbs fe f l DS(on) Package Marking BSS 100 100 V 0.22 A 6Í2 TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code


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    Q62702-S499 Q62702-S007 Q62702-S206 E6288 E6296 E6325 S35bQ5 Q133777 SQT-89 B535bQ5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BFR 91A NPN Silicon RF Transistor • For low-distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


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    Q62702-F735 0235bGS D0b73Gl 6235b05 D0b7302 PDF

    transistor bc 577

    Abstract: transistor bc 103
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code


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    Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M


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    BCP53M Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 6E35bOS 02BShD5 B35b05 PDF

    012n3

    Abstract: No abstract text available
    Text: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    BFP193 900MHz Q62702-F1282 OT-143 012n3 PDF

    TS 11178

    Abstract: No abstract text available
    Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    Q62702-F1346 OT-23 B535bQ5 BFR194 900MHz TS 11178 PDF