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    TRANSISTOR W BH 212 Search Results

    TRANSISTOR W BH 212 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR W BH 212 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: , Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlingtion Power Transistor PMD16K80 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVcEO(sus)= SOV(Min)


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    PMD16K80 PMD17K80 100mA; PDF

    Untitled

    Abstract: No abstract text available
    Text: J.£.is.£.u ^s-mL-C-onauctoi -I 10 duct i, Line, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP8N60 N-Channel Mosfet Transistor • FEATURES • Drain Current-ID= 7.5A@ TC=25"C • Drain Source Voltage-


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    MTP8N60 O-220C PDF

    Untitled

    Abstract: No abstract text available
    Text: , L/nc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF push-pull power transistor FEATURES • Double Input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting


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    BLV948 2x100 BLV948 PDF

    2SA1117

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation


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    2SA1117 -200V 2SC2608 -50mA; -200V; 2SA1117 PDF

    Untitled

    Abstract: No abstract text available
    Text: c2\£.w J. nc. tU TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA. Silicon NPN Power Transistor BUY56 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=160V(Min.) • Low Collector Saturation Voltage:V CE (sat)=1.5V@lc=7A


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    BUY56 PDF

    Untitled

    Abstract: No abstract text available
    Text: zSzmi-Conauctoi \P\odu.ci^, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY58 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 160V(Min.) • Low Collector Saturation Voltage:V CE (.at)=1.3V@l c =10A


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    BUY58 PDF

    Untitled

    Abstract: No abstract text available
    Text: , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA900 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO=-18V(Min) • Good Linearity of I>E • Low Collector Saturation Voltage


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    2SA900 2SC1568 O-126 -50mA -50mA; PDF

    Untitled

    Abstract: No abstract text available
    Text: <zEs.mL-don.au.ctot Lpioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor BDY54 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(susr 120V(Min.)


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    BDY54 10MHz PDF

    6 Pin LED PIRANHA

    Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
    Text: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable


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    D-85737 SE-573 6 Pin LED PIRANHA everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X PDF

    TRANSISTOR bH-16

    Abstract: bh16 transistor BH-16 transistor BCP53T1 BH onsemi SOT-223 16T1 BCP53T1 BCP56 BCP56T1 BCP56T3
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


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    BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56 TRANSISTOR bH-16 bh16 transistor BH-16 transistor BCP53T1 BH onsemi SOT-223 16T1 BCP53T1 PDF

    Integrated Inductive Components

    Abstract: TB 2929 H amplifier PHILIPS ferrite transformer cores magnetic amplifier saturable core planar transformer formula Indiana general ferrite core MeFe2O4 TRANSISTOR PHILIPS 8050 3C30 Philips KS capacitors
    Text: technical note IIC Integrated Inductive Components Philips Components IIC Integrated Inductive Components Contents 1 Introduction 3 Features and Applications 4 Design example 8 Materials 9 Type Number structure 14 Environmental aspects 14 Product range 14


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    IIC10 COD19 Integrated Inductive Components TB 2929 H amplifier PHILIPS ferrite transformer cores magnetic amplifier saturable core planar transformer formula Indiana general ferrite core MeFe2O4 TRANSISTOR PHILIPS 8050 3C30 Philips KS capacitors PDF

    ifm D 45128

    Abstract: kd 2060 transistor
    Text: .co m Original Device Manual ClassicController w.if m CR0032 Runtime system v02 ele ifm 7390660_07_UK 2014-08-15 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile ClassicController CR0032 Runtime System V02 2014-08-15 .co m Contents


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    CR0032 CR0032) ifm D 45128 kd 2060 transistor PDF

    TEMPLATEA

    Abstract: kd 2060 transistor
    Text: .co m Original Device Manual CabinetController w.if m CR0303 Runtime system v05 ele ifm 7390669_05_UK 2014-08-19 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile CabinetController CR0303 Runtime System V05 2014-08-19 .co m Contents


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    CR0303 CR0303) document09 TEMPLATEA kd 2060 transistor PDF

    BCX70

    Abstract: BCX71 BCX71G BCX71H BCX71J BCX71K BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX71 series PNP general purpose transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 20 Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES


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    M3D088 BCX71 BCX70 SCA63 115002/00/03/pp8 BCX71G BCX71H BCX71J BCX71K BP317 PDF

    Untitled

    Abstract: No abstract text available
    Text: POlilEREX INC m 3*1E D • 7Stm b51 000407b fl H P R X u /a u x T-l'l-lZ KR221K03 Powerex, Inc., Wills Street, Youngwood, Pennsylvania IS697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Chopper Darlington


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    000407b KR221K03 IS697 BP107, Amperes/1000 PDF

    BUK443-60A

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK443-60A/B BUK443 OT186 BUK443-60A PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features


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    002flflS4 BLU60/12 OT-119 PDF

    tpv394a

    Abstract: RF TV TRANSMITTER tv transmitter amplifier circuit arco 404 Arco 423 VHF transmitter circuit arco 403
    Text: 4bE D flOTOROLA SC XSTRS/R F MOTOROLA • I SEMICONDUCTOR ^ b3b?254 OG'iSBll 4 ■ HOTb T=-53-OB TECHNICAL DATA The RF Line TPV394A VH F Linear Power Transistor . . . d e s ig n e d s p e c ific a lly fo r ban d III T V tra n s p o s e rs a n d tra n s m itte r a m p lifie rs. The


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    0GT5311 TPV394A TPV394A 244C-01, b3b72S4 T-33-05 RF TV TRANSMITTER tv transmitter amplifier circuit arco 404 Arco 423 VHF transmitter circuit arco 403 PDF

    EN5387

    Abstract: VPS10S 101PC be432
    Text: Ordering num ber : EN5307 Wide-Bandwidth Output Module video pack VPS10S sa/imi CRT Display Video Output Amplifier: High-Voltage, Wideband Amplification OFeatures Package Dimensions * H igh output voltage and wide b an d w id th m ake the VPS 1OS optim al for use in


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    EN5387 VPS10S 15-pin EN5387 VPS10S 101PC be432 PDF

    MOTOROLA circuit for mrf150

    Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics


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    MRF150 MRF150 MOTOROLA circuit for mrf150 UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor PDF

    smd transistor AFQ 36

    Abstract: P-TQ220-5-1 transistor c160 type TLE4270 smd transistor 7D QK55 TRANSISTOR T0220 AEP01922 AEP02172 Q67000-A9209
    Text: fi235bD5 O O l b b l ? ATT S IEM EN S T L E 427 0 5-V Low -D ro p Fixed V o ltage R egulator Features Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms


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    fi235b05 Q67000-A9209 P-TQ220-5-1 Q67000-A9243 P-T0220-5-2 Q67006-A9201 P-TQ220-5-8 0235bOS P-T0220-5-8 smd transistor AFQ 36 P-TQ220-5-1 transistor c160 type TLE4270 smd transistor 7D QK55 TRANSISTOR T0220 AEP01922 AEP02172 PDF

    2N6439

    Abstract: BH Rf transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W — 225-400 MHz CO N TR O LLE D " Q " B R O A D BA N D RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR . , . designed p rim a rily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in the 2 2 5 -4 0 0 M H z fre q u e n c y range.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: S3E D FUJITSU LTD • 374T?5b QQDEBbü 3öb H F C A J r? Jan u ary 1992 E dition 1.0 ^ FUJITSU DATA S H E ET : MB4752A SUBSCRIBER LINE INTERFACE 1C DESCRIPTION The Fujitsu MB4752A is designad for PBX Private Branch Exchange , it has battery feed, supervision and 4-wire to 2-wire conversion functions.


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    MB4752A MB4752A 200ft AV0009-921J1 PDF

    AGP 9805

    Abstract: transistor SMD FLO 14 2222 031 capacitor philips smd transistor GY transistor smd bh smd transistor GY 740 PH smd transistor PH transistor bd139 transistor smd K2 PH BD139
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Jan 08 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1997 Oct 14 PHILIPS Philips Semiconductors Product specification


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    BLV862 SC08a 127047/00/04/pp12 AGP 9805 transistor SMD FLO 14 2222 031 capacitor philips smd transistor GY transistor smd bh smd transistor GY 740 PH smd transistor PH transistor bd139 transistor smd K2 PH BD139 PDF