Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR WTS Search Results

    TRANSISTOR WTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: WEITRON WTS772 PNP Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • Low speed switching TO-92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO


    Original     		PDF WTS772 17-Jan-2014 270TYP

    transistor marking code wts

    Abstract: transistor marking code wts 15
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		PDF BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts transistor marking code wts 15

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166W WTs 1=B UPON INQUIRY Package 2=E 3=C SOT-323


    Original     		PDF OT-323 Nov-26-1996 transistor marking code wts

    marking WTS sot23

    Abstract: TRANSISTOR wts WTs transistor BCR166 wts sot23 BCR166F BCR166L3 BCR166T BCR166W SC75
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		PDF BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 marking WTS sot23 TRANSISTOR wts WTs transistor BCR166 wts sot23 BCR166F BCR166L3 BCR166T BCR166W SC75

    Untitled

    Abstract: No abstract text available
    Text: WEITRON WTS882 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • Power dissipation TO-92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage


    Original     		PDF WTS882 17-Jan-2014 270TYP

    transistor marking code wts

    Abstract: sot-23 WTs sot-23 marking WTs Q62702-C2339
    Text: BCR 166 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2339 OT-23 Nov-26-1996 transistor marking code wts sot-23 WTs sot-23 marking WTs Q62702-C2339

    transistor marking code wts

    Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		PDF BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8

    BCR166W

    Abstract: VSO05561
    Text: BCR166W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR166W VSO05561 EHA07183 OT323 Nov-29-2001 BCR166W VSO05561

    VSO05561

    Abstract: No abstract text available
    Text: BCR 166W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 166W WTs Pin Configuration 1=B 2=E Package


    Original     		PDF VSO05561 EHA07183 OT-323 Oct-19-1999 VSO05561

    BCR166W

    Abstract: VSO05561
    Text: BCR166W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR166W VSO05561 EHA07183 OT323 Jul-16-2001 BCR166W VSO05561

    BCR166

    Abstract: No abstract text available
    Text: BCR166 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR166 VPS05161 EHA07183 Jul-16-2001 BCR166

    BCR166

    Abstract: No abstract text available
    Text: BCR166 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR166 VPS05161 EHA07183 Nov-29-2001 BCR166

    Untitled

    Abstract: No abstract text available
    Text: BCR 166 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 166 WTs Pin Configuration 1=B 2=E Package 3=C


    Original     		PDF VPS05161 EHA07183 OT-23 Oct-19-1999

    5n06v

    Abstract: 5n06 TMOS E-FET AG3B CASE369A
    Text: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER


    Original     		PDF 5N06V/curves 5n06v 5n06 TMOS E-FET AG3B CASE369A

    transistor marking code wts

    Abstract: BCR108W BCR166 BCR166F BCR166W BCW66 bcr1
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR166/F BCR166W


    Original     		PDF BCR166. BCR166/F BCR166W EHA07183 BCR166 BCR166F OT323 transistor marking code wts BCR108W BCR166 BCR166F BCR166W BCW66 bcr1

    TLP321GB

    Abstract: TLP321 TI OBH marking marking gB diode TLP3211
    Text: GaAs IRED S PHOTO-TRANSISTOR T L P 3 2 1 PROGRAMMABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The TOSHIBA TLP321, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP321-2 offers two isolated channels in an eight lead plastic


    OCR Scan     		PDF TLP321, TLP321-2 TLP321-4 LP321/-2/-4 TLP321 5000Vrms UL1577, E67349 TLP321-4 TLP321-2 TLP321GB TLP321 TI OBH marking marking gB diode TLP3211

    transistor marking code wts

    Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23


    OCR Scan     		PDF 47kfl) Q62702-C2339 OT-23 transistor marking code wts sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor

    MARKING CODE T7s

    Abstract: MARKINGCODET7s
    Text: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E


    OCR Scan     		PDF 47kfi) OT-323 fl235b05 623St30S MARKING CODE T7s MARKINGCODET7s

    1207A

    Abstract: No abstract text available
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan     		PDF Q62702-C2339 OT-23 BE35b05 S35b05 fi235bD5 1207A

    QM30DY-H

    Abstract: QM30DY-HB
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M30DY-HB • • • • • Ic Collector current. 30A Vcex Collector-emitter voltage. 600V hFE DC current gain. 750


    OCR Scan     		PDF QM30DY-HB M30DY-HB E80276 E80271 Vcc-300V QM30DY-H QM30DY-HB

    QM15TB-24

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM15TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 1 5T B -24 • lc • Vcex • hFE Collector current. 15A Collector-emitter voltage.1200V DC current gain. 75


    OCR Scan     		PDF QM15TB-24 E80276 E80271 30LLE QM15TB-24

    QM75DY-24

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM7 5 DY-2 4 • Ic • V c ex • hFE Collector current. 75A Collector-emitter voltage. 1200V DC current gain. 75


    OCR Scan     		PDF QM75DY-24 E80276 E80271 QM75DY-24

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ! Q M 50E2Y/E3Y-H • lc • • • • Collector current. 50A VCEX Collector-emitter voltage.600V hFE DC current gain. 75


    OCR Scan     		PDF QM50E2Y/E3Y-H 50E2Y/E3Y-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation


    OCR Scan     		PDF OT-363 Q62702-C2495