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    TRANSISTORS AIO 20 Search Results

    TRANSISTORS AIO 20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS AIO 20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: [email protected]


    Original     		PDF AS3693A QFN48 AS3693A

    AN2583

    Abstract: M41T00 M41T00AUD
    Text: AN2583 Application note Understanding and applying the M41T00AUD real-time clock with audio Introduction Drawing on the fact that the squarewave generator built in to many ST serial RTCs can be used as a tone generator, users have been employing ST real-time clocks in printer-fax


    Original     		PDF AN2583 M41T00AUD AN2583 M41T00

    Untitled

    Abstract: No abstract text available
    Text: DA6001 Rev. 1.4  December 22, 2009 Data Sheet HIGHLY INTEGRATED POWER AND CLOCK SUPPLY IC FOR NEW GENERATION INTEL ATOM PROCESSOR PLATFORM Integrated power management sourcing Dialog Semiconductor’s new DA6001 with a single supply voltage the device provides, low noise


    Original     		PDF DA6001 DA6001 DA6001, 144LD

    STDC2150

    Abstract: No abstract text available
    Text: STDC2150 PRODUCT BRIEF A COMPLETE CONTROLLER SOLUTION FOR INKJET PHOTO ALL-IN-ONES SIGMATEL, A LEADER IN MIXED-SIGNAL, MULTIMEDIA SEMICONDUCTORS, OFFERS COMPLETE SYSTEM ON CHIP SOC SOLUTIONS FOR THE MULTI-FUNCTION PRINTER (MFP) MARKET. SigmaTel MFP solutions offer the highest level of


    Original     		PDF STDC2150 32-bit

    block diagram of inkjet printer

    Abstract: applications of microprocessor in printer inkjet printhead Color CIS line sensor inkjet printhead controller inkjet DC1100 flatbed scanner controller CIS scanner block diagram of paper scanner
    Text: Imaging Solutions Fax and MFP Solutions Entry Level Inkjet Photo All-in-One SoC DC1100 Conexant’s portfolio includes a comprehensive suite of semiconductor solutions for communications and consumer applications. A Complete Controller Solution for Inkjet Photo All-in-Ones


    Original     		PDF DC1100 DC1100 PBR-201768 block diagram of inkjet printer applications of microprocessor in printer inkjet printhead Color CIS line sensor inkjet printhead controller inkjet flatbed scanner controller CIS scanner block diagram of paper scanner

    Untitled

    Abstract: No abstract text available
    Text: September 1990 Edition 1.0 DATA SHEET MB82B88-15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 8 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu M B82B88 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with C M O S technology. B iC M O S technology is


    OCR Scan     		PDF MB82B88-15/-20 256K-BIT B82B88 MB82B88

    transistors aio 20

    Abstract: No abstract text available
    Text: September 1990 Edition 1.0 FUJITSU DATA SHEET MB82B88-15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 8 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B88 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with CMOS technology. BiCMOS technology is


    OCR Scan     		PDF MB82B88-15/-20 256K-BIT MB82B88 transistors aio 20

    2SC3610

    Abstract: No abstract text available
    Text: Power T ransistors 2SC3610 2SC3610 Silicon NPN Epitaxial Planar Type Package Dimensions Video Amplifier U nit ! mm • Features 10.5 ± 0.5 • High transition frequency fT S 4.8max. +—h 9.8max. 1.5max. • Small collector output capacitance (C*) iS +i


    OCR Scan     		PDF 2SC3610 bS32flS2 2SC3610

    2n6520

    Abstract: 2N6517 2N6515 2N6517 MOTOROLA 2N6519 transistors aio 20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N6517 PNP 2N 6519 2N652Ö PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N6515 2N6517 2N6520 2N6519 v CEO 250 300 350 Vdc Collector-Base Voltage VCBO


    OCR Scan     		PDF 2N6517 2N652Ö 2N6515 2N6519 2N6520 2N6515, 2N6516, 2N6519, 2N6517 MOTOROLA transistors aio 20

    dta143

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors DTA143 EE/DTA143 EUA/DTA143 EKA/ DTA143 ECA/DTA143 ESA •F eatu re s 1) Built-in bias resistors en a b le th e configuration of an inverter circuit without connecting external input resistors (see the equivalent cir­


    OCR Scan     		PDF DTA143 EE/DTA143 EUA/DTA143 ECA/DTA143

    Dionics DI 297N

    Abstract: No abstract text available
    Text: Ï53f •SP D MONOLITHIC DIONICS INC. 65 R U S H M O R E ST., W E S T B U R Y , N .Y . 115 90 P 5 1 6 9 9 7 -7 4 7 4 DI 257P HIGH VOLTAGE DI 267N DI 267P DI 277N DI 277P CONSTANT CURRENT 7 SEGMENT DISPLAY DRIVERS DI 287N DI 287P DI 297N DI 297P 006925 DI 257N


    OCR Scan     		PDF OI257P DI257N DI257P I237N DI237N Dionics DI 297N

    DI297N

    Abstract: seven transistors PNP drivers
    Text: D MONOLITHIC DIONICS INC. 65 R U S H M O R E S T ., W E S T B U R Y , N .Y . 11590 516 9 9 7 -74 7 4 HIGH VOLTAGE CONSTANT CURRENT 7 SEGMENT DISPLAY DRIVERS 1 I! DI 257N DI 257P DI 267N DI 267P DI 277N DI 277P DI 287N DI 287P DI 297N DI 297P C IR C U IT DIAGRAMS


    OCR Scan     		PDF DI257N DI257P DI237N DI297N seven transistors PNP drivers

    MHQ2907

    Abstract: MPQ2907 MHQ2906 A040 2N2906 2N2907 MPQ2906 MH02906
    Text: MHQ2906, MHQ2907 SILICON MPQ2906, MPQ2907 QUAD DUAL-IN-LINE PNP SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose switching circuits and OC to V H F am plifier applications.


    OCR Scan     		PDF MHQ2906, MHQ2907 MPQ2906, 10/uAdc 2N2906 2N2907 O-116 MHQ2907 MPQ2907 MHQ2906 A040 2N2907 MPQ2906 MH02906

    xr1094

    Abstract: FIVE band graphic equalizer 261G6 capacitor 106 16K XR1094CP gph-17 xr-1094
    Text: XR-1094 X 'E X A R Advanced Information Five Band Graphic Equalizer Filter and Display Driver PIN ASSIGNMENT GENERAL INFORMATION A1 The XR-1094 is a single chip graphic equalizer and display driver containing switched-capacitor band­ pass filters, filter multiplexer, data latches and high


    OCR Scan     		PDF XR-1094 XR-1094 16kHz. 10kHz 16kHz fr60i xr1094 FIVE band graphic equalizer 261G6 capacitor 106 16K XR1094CP gph-17

    MB81C84

    Abstract: No abstract text available
    Text: < p ^ July 1 99 0 Edition 1.0 FUJITSU DATA S H E E T M B82B84-15/-20 CMOS 256K-BIT HIGH-SPEED BiCMOS SRAM 64K Words x 4 Bits BiCMOS High-Speed Static Random Access Memory with Automatic Power Down The Fujitsu MB82B84 is a 65,536 words x 4 bits static random access memory


    OCR Scan     		PDF B82B84-15/-20 256K-BIT MB82B84 500mV MB82B84-15 MB82B84-20 MB81C84

    Untitled

    Abstract: No abstract text available
    Text: TS281-A89Z Decem ber 1989 FUJITSU DATA SHEET MB82B81-15/-20 256K BIT HIGH SPEED BI-CMOS SRAM 262,144-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B81 is a 65,536 words by 1 bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high speed, peripheral


    OCR Scan     		PDF TS281-A89Z MB82B81-15/-20 144-WORD MB82B81 300mil MB82B81-15 MB82B81-20

    Untitled

    Abstract: No abstract text available
    Text: November 1993 Edition 2.0 FUJITSU DATA SHEET MB82008-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD X 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82008 is 131,072-word x 8-bit high speed static random access memory fabricated with CMOS technology.


    OCR Scan     		PDF MB82008-20/-25 072-WORD MB82008 400mil 13age 0b024 MB82008-20

    UDN5703A

    Abstract: UDN-5703A UDN5706A ON60
    Text: 5703 5706 AND QUAD 2-INPUT PERIPHERAL/POWER DRIVERS —TRANSIENT-PROTECTED OUTPUTS These 16-lead quad 2-input peripheral/power drivers are bipolar monolithic integrated circuits containing AND or OR logic gates, highcurrent switching transistors, and transient-suppression diodes


    OCR Scan     		PDF UDN5703A 150mA -7628C UDN5703A UDN-5703A UDN5706A ON60

    MC 151 pnp

    Abstract: 05Z5 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4698 2N4900
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) « 40-425V PNP Power Transistors NFN Typ* No. comptait«»! 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4699 2N4900 2N5344 2N3767 2N4910 2N4911 2N4912 VCE(SAT) 0IC/IB (V0A/A) VCEO <»»>


    OCR Scan     		PDF 0-425V 2N3740 2N3766 2N3740A 2N3741 2N3767 2N3741A 2N4698 2N4910 2N2853 MC 151 pnp 05Z5 2N3740A 2N3741A 2N4900

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU TS268-B893 March 1989 256K-BIT 65,536 x 4 Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB82B84 is a 65,536-words by 4-bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high


    OCR Scan     		PDF 256K-BIT MB82B84 536-words 300mil MB82B84-15 MB82B84-20 24--LEADS DIP--24P-H03)

    006 50001 transistor

    Abstract: 100MHZ DTA114E SC-75A T148
    Text: Transistors Digital transistor Common Emitter Dual Transistors UMA9N/FMA9A • E x t e r n a l d im e n s io n s (Units: m m ) •F e a tu re s 1) T w o D T A 1 1 4 E in U M T a n d S M T U M A 9N packages. 2) FM A 9A 0 .9 + 0.1 2.9±0.2 1.9+0.2 V .f 10.95 0.95


    OCR Scan     		PDF DTA114E SC-88A SC-74A O-220FP O-220 O-126 O-220, 0Dlb713 O-220FN O-220FN 006 50001 transistor 100MHZ SC-75A T148

    D7722

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 37417 b 2 O O D 7722 1 • 53E D T-%-z%os TSS80-A89Z December 1989 FufíTSU DATA SHEET ■ MB 82B 71-15/-20 64KBIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY Tlio Fujitsu M882B71 is a 65,536 words by 1 bits static random access memory fabricated with a


    OCR Scan     		PDF TSS80-A89Z 64KBIT 536-WORD M882B71 MB82B71 300mil 374m2 0QQ773Q MB82B71-15 D7722

    Untitled

    Abstract: No abstract text available
    Text: FuflTSU July 1990 Edition 1.0 DATA SHEET MB82B84-15/-20 CMOS 256K-BIT HIGH-SPEED BiCMOS SRAM 64K Words x 4 Bits BiCMOS High-Speed Static Random Access Memory with Automatic Power Down The Fujitsu MB82B84 is a 65,536 w ords x 4 bits static random access memory


    OCR Scan     		PDF MB82B84-15/-20 256K-BIT MB82B84 MB82B84-15 MB82B84-20

    Untitled

    Abstract: No abstract text available
    Text: BURR-BROQJN CORP 11E D | l 7313bS o o m o m XTR101 BURR-BROW N I B 3 I B A V A IL A B L E IN DIE FORM Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSMITTER FEATURES APPLICATIONS • IN S TRU M ENTATION A M P LIF IE R IN PU T Low Offset Voltage, 30¡N max


    OCR Scan     		PDF 7313bS XTR101 75juV/Â