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    TRANSISTORS C 828 Search Results

    TRANSISTORS C 828 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS C 828 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CQ 4.000 crystal oscillator 4Mhz

    Abstract: ztb 421 CQ 13.560 ctx128 ats 4.096 18pf CTX128 diode SE271 ZTB455E CSX750PCC 7213 time base generator ic
    Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 16-201 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 202-402 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 403-423


    Original     		PDF

    ctx128

    Abstract: IC 8021-2 CTX128 diode SE271 CSA 20.00MX ZTT-4.00MG ZTB455E CSX750PCC ECS-327SMO ECS-10-13-1H
    Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 14-176 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 177-313 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 314-333


    Original     		PDF

    2SC828

    Abstract: 2SC828 R transistor 2sc828 2SC828A 2sc828 transistor 2SC828A S transistor 2sc828 data sheet 2SC828 R S 2SC828A R 2SC828 S
    Text: ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC828 2SC828A 2SC828 R transistor 2sc828 2SC828A 2sc828 transistor 2SC828A S transistor 2sc828 data sheet 2SC828 R S 2SC828A R 2SC828 S

    TRANSISTOR 2sc828

    Abstract: 2SC828 2sc828 transistor OF TRANSISTOR 2SC828 2sc828 equivalent 2SC828A C 828A TRANSISTOR transistor 2sc828 data sheet 2SC828 pin configuration 2sc828 q
    Text: ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC828 2SC828A TRANSISTOR 2sc828 2sc828 transistor OF TRANSISTOR 2SC828 2sc828 equivalent 2SC828A C 828A TRANSISTOR transistor 2sc828 data sheet 2SC828 pin configuration 2sc828 q

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    Untitled

    Abstract: No abstract text available
    Text: TIP42;A TIP42B;C _ J V SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. NPN complements are TIP41 series.


    OCR Scan     		PDF TIP42 TIP42B TIP41 TIP42 Dimen1981 bb53T

    TIP42 philips

    Abstract: T1P42B
    Text: _ PHILIPS INTERN ATIONAL SbE D TIP42;A . _TIP42B;C 711GÖ2b GGM3S34 DÖ1 • PHIN ■ SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier


    OCR Scan     		PDF TIP42 TIP42B GGM3S34 TIP41 TIP42jA T1P42B 711002b 0043S40 X--33--21 TIP42 philips

    TIP42A

    Abstract: TIP41 TIP42 TIP42B TIP42 amplifier TIP42 applications w826 ibm 1981 a-3131 A3131
    Text: TIP42;A TIP42B;C SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in general ou tput stages o f am plifier circuits and switching applications. NPN complements are TIP41 series. Q UICK REFERENCE D A T A


    OCR Scan     		PDF TIP42 TIP42B TIP41 O-220. TIP42A TIP42 amplifier TIP42 applications w826 ibm 1981 a-3131 A3131

    eurosil clock

    Abstract: EUROSIL ELECTRONIC GMBH
    Text: TEMIC e5130 S e m i c o n d u c t o r s Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 15 tor the P-channel out­ put transistors and typ. 20 (13 ) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To


    OCR Scan     		PDF e5130 e5130 D-74025 Ol-Apr-99 eurosil clock EUROSIL ELECTRONIC GMBH

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    MU4893

    Abstract: MU4894 MU4891 MU4892 EB20 unijunction application note 100-C
    Text: MU4891 silicon thru MU4894 SILICON A N N U LA R PLASTIC U N IJU N C TIO N TRANSISTORS PN UNIJUNCTION TRANSISTORS . . . designed for military and industrial use in pulse, timing, triggering, sensing, and oscillator circuits. The annular process provides low leakage current, fast switching and low peak-point


    OCR Scan     		PDF MU4891 MU4894 MU4893 MU4892 MU4893 MU4894 MU4891 MU4892 EB20 unijunction application note 100-C

    eurosil clock

    Abstract: eurosil EUROSIL ELECTRONIC GMBH Eurosil Electronic
    Text: Tem ic e5130 S e m i c o n d u c t o r s Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 Q 15 Q tor the P-channel out­ put transistors and typ. 20 Q (13 Q) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To


    OCR Scan     		PDF e5130 e5130 08-May-96 eurosil clock eurosil EUROSIL ELECTRONIC GMBH Eurosil Electronic

    EUROSIL ELECTRONIC GMBH

    Abstract: eurosil clock eurosil IN4114 Eurosil Electronic eurosil e5130
    Text: Tem ic e5130 S e m i c o n d u c t o r s Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 Q 15 Q tor the P-channel out­ put transistors and typ. 20 Q (13 Q) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To


    OCR Scan     		PDF e5130 e5130 D-74025 01-Apr-99 EUROSIL ELECTRONIC GMBH eurosil clock eurosil IN4114 Eurosil Electronic eurosil e5130

    C 4977

    Abstract: ON 4977 4977 2n4979 4978 25CC 2N4978 C12SS 2n 834
    Text: 2N 4977 2N 4978 2N 4979 FIELD-EFFECT TRANSISTORS, SILICON. N CHANNEL TRANSISTORS A EFFET DE CHAMP, SILIC IU M . C ANAL N • Fast switching Commutation rapide - Chopper Découpeur Case TO-18 50 mA 15 mA 7,5 mA min. min. min. 2N 4977 2N 4978 2N 4979 15 20 40


    OCR Scan     		PDF

    R005 FZ

    Abstract: transistors C 828 BF841 BF840 ic MARKING FZ
    Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors M a y in g BF840 = NC BF841 = ND PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70 0.50 2.6 1.4


    OCR Scan     		PDF BF840 BF841 BF840 R005 FZ transistors C 828 BF841 ic MARKING FZ

    SOT23 marking 828

    Abstract: 46 marking
    Text: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3


    OCR Scan     		PDF Q62702-C1493 Q62702-C1475 OT-23 BCV26 BCV46 SOT23 marking 828 46 marking

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    diode t85

    Abstract: 2N7805 trf 510 transistor 2N2152 transistor 45 f 122 32N03 t85 diode 2N1073 TRF 840 2N2144A
    Text: PNP HIGH POWER TRANSISTORS 7 | OODOOIS I>e | 2844352 27 co C D C D C D C O C D C O C D C O C O C D C D C O C O C O C O ''a C O C O C O C O C O C O C O C O C O C O C O C D C D C O C O C D C O C O C D C O O OOOOOOOOOOOOOOOOOOOOÇM I— I— I—I— I— I— i— I— I— I— I— I— 1— 1— 1— I— I— f- I— 1— >“


    OCR Scan     		PDF 2N58A 2N629 2N2144A /2N2612 2N5436 2N143/13 2N630 2N2145A 2N2833 2N174A diode t85 2N7805 trf 510 transistor 2N2152 transistor 45 f 122 32N03 t85 diode 2N1073 TRF 840

    Untitled

    Abstract: No abstract text available
    Text: M I C R O S E H I CO RP / IdATERTOüJN 5ÜE D • POWER TRANSISTORS ^347^3 JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN D G I S M Ö R 127 M U N I T JANTX, JANTX, JANTX, JANTX, & & & & JANTXV JANTXV JANTXV JANTXV 2N5660 2N5661 2N5662 2N5663 FEATURES D E S C R IP T I O N


    OCR Scan     		PDF 2N5660 2N5661 2N5662 2N5663 MIL-S-19500/454 2N5660, 2N5661 25iTlA

    3N171

    Abstract: VN10MA C 828
    Text: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device


    OCR Scan     		PDF 3N170/3N171 3N171 VN10MA C 828

    3N170

    Abstract: 3N170-71 3N171 X3N170-71
    Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATU RES H AND LING P R E C A U TIO N S • • • • M O S field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible dam age to the device


    OCR Scan     		PDF 3N170/3N171 1B44322 3N170 3N170-71 3N171 X3N170-71

    Untitled

    Abstract: No abstract text available
    Text: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode (trr: 200ns). The mounting base of the


    OCR Scan     		PDF QCA100BA60 E76102 200ns)

    BT 816 transistor

    Abstract: transistor bt 808 BT 815 transistor 2SD807 BT 812
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 12//S BT 816 transistor transistor bt 808 BT 815 transistor 2SD807 BT 812

    2SC799

    Abstract: transistor 2sa564 2sa564 transistor 2SA564 25X1 2SA539
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 150Mc) 2SA564 2SC799 transistor 2sa564 2sa564 transistor 25X1 2SA539