DAEWON tray 48
Abstract: daewon tray daewon 3476a 12B-0609-F19 12B-0608-F19 VBK048 TRAY MPPO DAEWON FBGA FBGA 6x8
Text: Chapter 5 Trays Fine-Pitch Ball Grid Array: FAA 064 322.6 315.0 * 2.54 R. 4 PLACES VACUUM PICKUP CELLS 10 PLACES (6 CENTER CELLS, 4 SIDE CELLS) 5.62* X 7.62 SEE DETAIL "D" Z Y SEE DETAIL "E" X X 112.0 135.9* ±0.25 92.1 * 16.00 B 12.7 * 11.95 CHAMFER
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3417-1a
27458b
3467b
26040h
DAEWON tray 48
daewon tray
daewon
3476a
12B-0609-F19
12B-0608-F19
VBK048
TRAY MPPO
DAEWON FBGA
FBGA 6x8
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hynix mcp
Abstract: hynix confidential HYNIX PACKING carel FBGA THICK TRAY HYNIX DDR2 512M DDR2 chip
Text: CSP Chip Scale Package Handling Guide Book Contents 1. 1. Understanding Understandingof ofCSP CSP Package PackageType Type 2. 2. Hynix’s Hynix’sCSP CSPProduct Productline line 3. 3. General GeneralAdvice Advicefor forChip ChipMounting Mounting 4. 4. Tape
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12B-0608-F19
Abstract: DAEWON tray 48 daewon daewon tray FBGA 6x8 TRAY fbga 6X8 DAEWON FBGA MPPO fBGA package tray 3466A
Text: Chapter 5 Trays Very Very Thin Small Outline No Lead Package: WNF 008 322.6 2.54 R. 4 PLACES * 315.0 VACCUM PICKUP CELLS 14 PLACES Y (12 CENTER CELLS, 2 SIDE CELLS) CLOSED CELLS 2 PLACES 6.35 SEE DETAIL "D" X BUMPS 12 PLACES * 7.62 Z SEE DETAIL "E" X
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0X45M
3466b
26022i
12B-0608-F19
DAEWON tray 48
daewon
daewon tray
FBGA 6x8
TRAY fbga 6X8
DAEWON FBGA
MPPO
fBGA package tray
3466A
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LGA 1155 Socket PIN diagram
Abstract: marking code smd fujitsu Yamaichi ic354 marking code smd semiconductor fujitsu pitch 0.4 QFP 256p SMD transistor M05 YAMAICHI ic234 smd code 38P fpq-144-0.5-03 smd p08
Text: Preface Thank you for your continuing loyalty to Fujitsu's semiconductor products. Electronic equipment is continually becoming smaller, lighter, and less expensive while also growing more advanced in terms of function and performance. As a result, applications for semiconductor devices such as IC and
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LGA 1156 PIN OUT diagram
Abstract: QFP11T144-002 LGA 1156 Socket diagram 216-LQFP Wells-CTI 36 lead Flat Pack smd AAAS Wells-CTI LCC socket Wells-CTI 880 020 BGA136 Enplas drawings
Text: Preface Thank you for your continuing loyalty to Fujitsu's semiconductor products. Electronic equipment is continually becoming smaller, lighter, and less expensive while also growing more advanced in terms of function and performance. As a result, applications for semiconductor devices such as IC and
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S25FL129
Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,
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128Mb
256Mb
512Mb
1-866-SPANSION
43715B
S25FL129
S98GL064NB0
S98GL064
s29gl256p90
S70FL256
S98GL064NB
s71vs128
S25FL129P
WSON 6x8
S25FL032K
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S25FL256
Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
Text: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:
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128Mb
256Mb
512Mb
43715C
S25FL256
S25FL512
S98GL064
S25FL256* spansion
S98GL064NB
S98GL064NB0
S25FL204
s25fl128s
S25FL129
S25FL032K
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VDR 0047
Abstract: J-STD-020B M68AW256M TFBGA48 TSOP44
Text: M68AW256M 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 256K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V
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M68AW256M
TSOP44,
TFBGA48
TSOP44
TFBGA48
VDR 0047
J-STD-020B
M68AW256M
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Untitled
Abstract: No abstract text available
Text: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V 256K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT
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M68AR256M
TFBGA48
TFBGA48
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M68AR256M
Abstract: TFBGA48 FBGA 6x8
Text: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V 256K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT
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M68AR256M
TFBGA48
TFBGA48
M68AR256M
FBGA 6x8
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Untitled
Abstract: No abstract text available
Text: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V
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M68AR256M
TFBGA48
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M68AW256M 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V
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M68AW256M
TSOP44
TFBGA48
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V 256K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT
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M68AR256M
TFBGA48
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M29W800FT M29W800FB 8 Mbit 1 Mbit x 8 or 512 Kbit × 16, boot block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read ■ Access time: 70 ns, 90 ns (only available for the known good die version)
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M29W800FT
M29W800FB
TSOP48
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M29W800FT
Abstract: No abstract text available
Text: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns, 90 ns (only available
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M29W800FT
M29W400FT
M29W800FB
M29W400FB
64-bit
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M29W400FT
Abstract: m29w400f m29w800f BGA package tray 6x8mm M29W
Text: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns TSOP48 (N)
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M29W800FT
M29W400FT
M29W800FB
M29W400FB
M29W800F)
M29W400F)
m29w400f
m29w800f
BGA package tray 6x8mm
M29W
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Untitled
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
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S25FL164K
Abstract: S25FL164 S25FL116K S25FL132K S25FL132 S25FL116 S25FL-P FAC024 S25FL-K footprint USON-8
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
S25FL164K
S25FL164
S25FL132K
S25FL132
S25FL116
S25FL-P
FAC024
S25FL-K
footprint USON-8
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JESD94
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
JESD94
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S25FL116K
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
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JESD216
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial and Automotive Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
JESD216
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JESD21
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
JESD21
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S25FL164
Abstract: S25FL164K S25FL116K S25FL132 S25FL132K JESD94 FL116K WND008 S25FL1-K S25FL116
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
S25FL164
S25FL164K
S25FL132
S25FL132K
JESD94
FL116K
WND008
S25FL1-K
S25FL116
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Untitled
Abstract: No abstract text available
Text: S25FL132K and S25FL164K S25FL132K – 32 Mbit 4 Mbyte S25FL164K – 64 Mbit (8 Mbyte) CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O Industrial and Automotive Temperature S25FL132K and S25FL164K Cover Sheet Data Sheet (Preliminary)
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S25FL132K
S25FL164K
S25FL132K
S25FL164K
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