TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
PDF
|
TSAL7200
TSAL7200
D-74025
20-May-99
|
TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
|
Original
|
PDF
|
TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
PDF
|
TSAL7200
TSAL7200
08-Apr-05
|
high power infrared led
Abstract: TSAL7200
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
|
Original
|
PDF
|
TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
18-Jul-08
high power infrared led
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm
|
Original
|
PDF
|
TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
|
TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
PDF
|
TSAL7200
TSAL7200
D-74025
20-May-99
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm
|
Original
|
PDF
|
TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
|
Original
|
PDF
|
TSAL7200
TSAL7200
2002/95/EC
2002/96/EC
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
PDF
|
TSAL7200
TSAL7200
D-74025
20-May-99
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
PDF
|
TSAL7200
TSAL7200
D-74025
11-May-04
|
TSAL7200
Abstract: No abstract text available
Text: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
PDF
|
TSAL7200
TSAL7200
D-74025
07-Apr-04
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
PDF
|
TSAL7200
TSAL7200
D-74025
20-May-99
|
TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs
|
Original
|
PDF
|
TSAL7200
TSAL7200
D-74025
20-May-99
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
PDF
|
TSAL7200
TSAL7200
18-Jul-08
|
|
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm
|
Original
|
PDF
|
TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
PDF
|
TSAL7200
TSAL7200
D-74025
01-Oct-04
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
PDF
|
TSAL7200
TSAL7200
D-74025
11-May-04
|
TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
PDF
|
TSAL7200
TSAL7200
08-Apr-05
|
sharp laser diodes
Abstract: TSOP855
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
PDF
|
vse-db0090-1010
sharp laser diodes
TSOP855
|
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
|
Original
|
PDF
|
90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
|
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily
|
Original
|
PDF
|
emit4-9337-2920
VSA-SG0041-0512
tept5600 response time
Application NOTES TSAL4400
BPV11F
Photo interrupter application notes
SMD Transistor 1020
"Photo Interrupter" dual transistor
CNY70
cny70 datasheet
TEMT6000
TCND5000
|
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
PDF
|
vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
|
3 mm ir receiver
Abstract: TSAL6200* transmitter TSAL6200 transmitter Telefunken ir receiver very long range ir remote control TSAL4400 ir transmitter receiver sensors TSAL5100 TSAL7200 TSAL6200
Text: Vishay Telefunken General Overview of IR Transmission in Free Space The free air IR data transmission, IR remote control as well as the most optoelectronic sensors and light barrier systems work with a wavelength between 870nm and 950nm. The emitter and detector
|
Original
|
PDF
|
870nm
950nm.
3 mm ir receiver
TSAL6200* transmitter
TSAL6200 transmitter
Telefunken ir receiver
very long range ir remote control
TSAL4400
ir transmitter receiver sensors
TSAL5100
TSAL7200
TSAL6200
|
TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in Package 0 5 mm T-VA Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant
|
OCR Scan
|
PDF
|
TSAL7200
TSAL7200
D-74025
21-Sep-98
|
