Untitled
Abstract: No abstract text available
Text: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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TSN520M60
J-STD-020
2011/65/EU
2002/96/EC
D1408015
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Untitled
Abstract: No abstract text available
Text: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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TSN520M60
J-STD-020
2011/65/EU
2002/96/EC
D1408069
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pciset sb82371sb
Abstract: sb82371sb CF9H SB82437FX66 intel 430FX pciset sb82437fx-66 430FX sb82371SB motherboard SB82437FX SB82438
Text: Intel 430FX PCIset 82437FX TSC , 82438FX (TDP) and 82371FB (PIIX) Specification Update Release Date: July 1996 The Intel 430FX PCIset may contain design defects or errors known as errata. Characterized errata that may cause the Intel 430FX PCIset’ s behavior to deviate from published specifications
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430FX
82437FX
82438FX
82371FB
82430FX
pciset sb82371sb
sb82371sb
CF9H
SB82437FX66
intel 430FX
pciset sb82437fx-66
sb82371SB motherboard
SB82437FX
SB82438
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Untitled
Abstract: No abstract text available
Text: BAV19W-G/BAV20W-G/BAV21W-G Taiwan Semiconductor CREAT BY ART Small Signal Product High Voltage Fast Switching Diode FEATURES - Fast switching device trr<50ns - Surface mount device type - Moisture sensitivity level 1 - Low reverse leakage - Pb free and RoHS compliant
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BAV19W-G/BAV20W-G/BAV21W-G
OD-123
OD-123
MIL-STD-202,
C/10s
S1404017
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Untitled
Abstract: No abstract text available
Text: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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TSSA3U45
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
JESD22-B102
D1401011
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Untitled
Abstract: No abstract text available
Text: 2A01 thru 2A07 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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2011/65/EU
2002/96/EC
DO-204AC
DO-15)
JESD22-B102
D1406010
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Untitled
Abstract: No abstract text available
Text: SK20H45 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - For use as Bypass diode in Solar application.
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SK20H45
2011/65/EU
2002/96/EC
JESD22-B102
D1310005
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Untitled
Abstract: No abstract text available
Text: 1N5408D Taiwan Semiconductor CREAT BY ART FEATURES 2000V General Purpose Rectifier - High capability DC blocking voltage - Negligble leakage sustain the high operation temperature - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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1N5408D
2011/65/EU
2002/96/EC
DO-201AD
JESD22-B102
D1404012
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Untitled
Abstract: No abstract text available
Text: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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TSP10U45S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
JESD22-B102
D1309024
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Untitled
Abstract: No abstract text available
Text: BA157G thru BA159G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
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BA157G
BA159G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
AEC-Q101
JESD22-B102
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Untitled
Abstract: No abstract text available
Text: 1SMC5352 Taiwan Semiconductor CREAT BY ART Surface Mount Zener Diodes FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and
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1SMC5352
J-STD-020
2011/65/EU
2002/96/EC
DO-214AB
JESD22-B102
D1407001
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Untitled
Abstract: No abstract text available
Text: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
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TSPB15U50S
J-STD-020
2011/65/EU
2002/96/EC
D1407012
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Untitled
Abstract: No abstract text available
Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
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1SS400
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404002
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Schottky
Abstract: No abstract text available
Text: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
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RB520S-30
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404003
Schottky
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Untitled
Abstract: No abstract text available
Text: TSF30U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
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TSF30U60C
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1401022
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d2sb
Abstract: No abstract text available
Text: D2SB05 thru D2SB80 Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Single-Phase Bridge Rectifier - Ideal for printed circuit board - High case dielectric strength - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
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D2SB05
D2SB80
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1311021
d2sb
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HER605G
Abstract: No abstract text available
Text: HER601G thru HER606G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated High Efficient Rectifiers - Glass passivated chip junction - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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HER601G
HER606G
2011/65/EU
2002/96/EC
JESD22-B102
D1408002
HER605G
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Untitled
Abstract: No abstract text available
Text: UG06A thru UG06D Taiwan Semiconductor CREAT BY ART Glass Passivated Ultra Fast Rectifiers FEATURES - Glass passivated chip junction - Ulterafast recovery time for high efficiency - Excellent high temperature switching - ldeally suited for use in very high frequency
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UG06A
UG06D
2011/65/EU
2002/96/EC
JESD22-B102
D1407024
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Untitled
Abstract: No abstract text available
Text: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and
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1N4001G
1N4007G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1310025
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Untitled
Abstract: No abstract text available
Text: HT11G thru HT18G Taiwan Semiconductor CREAT BY ART Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - High current capability - High reliability - High surge current capability - High efficiency, Low VF - Compliant to RoHS Directive 2011/65/EU and
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HT11G
HT18G
2011/65/EU
2002/96/EC
JESD22-B102
25oCd
D1407005
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Untitled
Abstract: No abstract text available
Text: 1T1G thru 1T7G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and
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2011/65/EU
2002/96/EC
JESD22-B102
D1407004
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1N5408
Abstract: No abstract text available
Text: 1N5400 thru 1N5408 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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1N5400
1N5408
2011/65/EU
2002/96/EC
DO-201AD
JESD22-B102
D1406023
1N5408
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Untitled
Abstract: No abstract text available
Text: KBP101G thru KBP107G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243
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KBP101G
KBP107G
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1311015
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Schottky
Abstract: No abstract text available
Text: BAT54W/AW/CW/SW Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode FEATURES - Fast switching speed - Low forward voltage - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on
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BAT54W/AW/CW/SW
200mW
OT-323
OT-323
C/10s
S1404009
Schottky
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