2fu smd transistor
Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR
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TC55V1001ASTI/ASRI
TC55V2001STI/SRI
TC55V020FT/TR
TC55V2161FTI
TC55V200FT/TR
TC55V040FT/TR
TC55V400FT/TR
TC58VT
TC75S55FU
2fu smd transistor
Infrared sensor TSOP 1738
diode ESM 765
tsop Ir sensor
smd 1608
TSOP44 Package layout
TSOP infrared
infrared sensor (TSOP 1738)data sheet
Compact High-Current and Low VF Surface Mounting Device SBD
TC58V16BFT
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TSOP RECEIVER
Abstract: TSOP IR ir led receiver bs12 "ir receiver" 19326 led Metal holder smd 83 tsop 38 TSOP1236TB1
Text: General Information Vishay Semiconductors General Information PRODUCT DESIGNATION AND SELECTION FOR TSOP IR RECEIVER MODULES Description of the TSOP series field codes: T S O P 1 Z Ammo pack optional : Vishay IR receiver Product groups: (blank), 3, 5, 7, 8, 9
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TSOP1236TB1
17-Sep-08
TSOP RECEIVER
TSOP IR
ir led receiver
bs12
"ir receiver"
19326
led Metal holder
smd 83
tsop 38
TSOP1236TB1
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VCCQ15
Abstract: No abstract text available
Text: White Electronic Designs W3E64M72S-XSBX PRELIMINARY* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP
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64Mx72
333Mbs
W3E64M72S-XSBX
VCCQ15
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm
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32Mx72
266Mb/s
W3E32M72SR-XSBX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply
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32Mx72
266MHz
W3E32M72S-XBX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs* 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP
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64Mx72
333Mbs*
333Mbs
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E32M72SR-XSBX ADVANCED* 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm
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32Mx72
266Mb/s
W3E32M72SR-XSBX
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tsop 66
Abstract: W3E32M72S-XBX
Text: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266, 333Mbs 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply
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W3E32M72S-XBX
32Mx72
333Mbs
333Mbs
tsop 66
W3E32M72S-XBX
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Untitled
Abstract: No abstract text available
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
268max
256Mb
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HYMD564M646C
Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
DDR333
HYMD564M646C
d431
DDR266
DDR266B
DDR400
DDR400B
HYMD532M646C
hynix ddr
hynix ddr sdram
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hynix ddr400 sdram 1Gb
Abstract: DDR200 DDR266 DDR266A DDR266B DDR333 hynix ddr hynix module suffix
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
256Mb
HYMD525G726CSP4M
hynix ddr400 sdram 1Gb
DDR200
DDR266
DDR266A
DDR266B
DDR333
hynix ddr
hynix module suffix
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs* 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP
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W3E64M72S-XSBX
64Mx72
333Mbs*
512MByte
333Mbs
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266 and 333Mbs* 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP
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64Mx72
333Mbs*
W3E64M72S-XSBX
333Mbs
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7812
Abstract: VCCQ15
Text: White Electronic Designs W3E32M72S-XBX ADVANCED* 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply
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32Mx72
266MHz
Program40
W3E32M72S-ESB
W3E32M72S-XBX
7812
VCCQ15
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
512MB,
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Untitled
Abstract: No abstract text available
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
268max
256Mb
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
DDR333
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D431
Abstract: DDR266 DDR266B DDR333 DDR400 DDR400B hynix module suffix DDR333 production drawing
Text: 200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb B ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
512MB,
HYMD564M646B
D431
DDR266
DDR266B
DDR333
DDR400
DDR400B
hynix module suffix
DDR333 production drawing
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DDR200
Abstract: DDR266 DDR266A DDR266B DDR333 hynix module suffix
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
256Mb
HYMD525G726BS
DDR200
DDR266
DDR266A
DDR266B
DDR333
hynix module suffix
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W3E64M72S-XBX
Abstract: No abstract text available
Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply
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W3E64M72S-XBX
64Mx72
333Mbs
512MByte
W3E64M72S-ESB
W3E64M72S-XBX
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Untitled
Abstract: No abstract text available
Text: 184pin Unbuffered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered DIMM series provide
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184pin
512Mb
400mil
184-pin
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HYMD512646cp8j
Abstract: HYMD512646CP8J-D43 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532646CP6-H HYMD532646CP6J hynix module suffix
Text: 184pin Unbuffered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered DIMM series provide
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184pin
512Mb
400mil
184-pin
HYMD512646cp8j
HYMD512646CP8J-D43
DDR266
DDR266B
DDR333
DDR400
DDR400B
HYMD532646CP6-H
HYMD532646CP6J
hynix module suffix
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MA 2810
Abstract: TCl 785 hynix module suffix BA111 DDR200 DDR266 DDR266A DDR266B DDR333
Text: 184pin Registered DDR SDRAM DIMMs based on 256Mb D ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 256Mb D ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 256Mb D ver. based Registered DIMM series provide
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184pin
256Mb
400mil.
184-pin
268max
128Mb
MA 2810
TCl 785
hynix module suffix
BA111
DDR200
DDR266
DDR266A
DDR266B
DDR333
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DDR266
Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B HYMD216M646D 256mb ddr333 200 pin hynix module suffix ci017
Text: 200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 256Mb D ver. DDR SDRAMs in 400 mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 256Mb D ver. based unbuffered
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200pin
256Mb
200-pin
256MB,
HYMD232M646D
DDR266
DDR266A
DDR266B
DDR333
DDR400
DDR400B
HYMD216M646D
256mb ddr333 200 pin
hynix module suffix
ci017
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