Untitled
Abstract: No abstract text available
Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive
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AS4SD2M32
64-Mb)
133MHz
TSOPII-86LD
-40oC
-55oC
125oC
AS4SD2M32
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16Mx8
Abstract: pc133 SDRAM DIMM W9D332647LA-333 079R 32X64 32X64 144 pin
Text: REVISIONS DATE REV I. DESCRIPTION: DESCRIPTION ZONE 6/29/01 LUISA T Ÿ W9D332647LA-333 is a 32Mx64 industry standard 168-pin PC-133 SDRAM DIMM Ÿ Manufactured with 16 16Mx8 400-mil TSOPII-54 PC-133 Synchronous DRAM devices of 12-row, 10-column, 4-bank addressing.
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W9D332647LA-333
32Mx64
168-pin
PC-133
16Mx8
400-mil
TSOPII-54
12-row,
10-column,
pc133 SDRAM DIMM
079R
32X64
32X64 144 pin
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222k
Abstract: 079R PC-100 PC100-222 KO9018
Text: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.
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W9Q316727KD-222K
16Mx72
168-pin
PC100-222
400-mil
TSOPII-54
12-row,
8Mx72.
W9Q316727KD-222K
D9Q316727KD-222K
222k
079R
PC-100
PC100-222
KO9018
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100MHZ
Abstract: 133MHZ PC200 V827332U04S
Text: MOSEL VITELIC V827332U04S 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Registered 33,554,432 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 8 DDR SDRAM in TSOPII-66 Packages
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V827332U04S
TSOPII-66
V827332U04S
T52-3775
100MHZ
133MHZ
PC200
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K4E640811D
Abstract: K4E660811D
Text: K4E660811D,K4E640811D CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
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K4E660811D
K4E640811D
K4E660811D-JC
400mil
K4E640811D
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Untitled
Abstract: No abstract text available
Text: V826616J24SC 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply
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V826616J24SC
TSOPII-66
DDR400
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100MHZ
Abstract: 133MHZ PC200 V827332K04SATG V827332K04SXXX
Text: MOSEL VITELIC V827332K04SATG 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Unbuffered 33,554,432 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 8 DDR SDRAM in TSOPII-66 Packages
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V827332K04SATG
TSOPII-66
V827332K04SATG
100MHZ
133MHZ
PC200
V827332K04SXXX
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Untitled
Abstract: No abstract text available
Text: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension
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M13S128168A
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Untitled
Abstract: No abstract text available
Text: ESMT M24L416256SA Revision History Revision 1.0 04 Jul. 2007 -Original Revision 1.1 (10 Sep. 2007) - Modify Vcc (max) =3.3V to 3.6V Revision 1.2 (27 Feb. 2008) - Add 44-pin TSOPII package - Add Avoid timing Revision 1.3 (24 Mar. 2008) - Add I-grade for TSOPII package
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44-pin
M24L416256SA
70-ns
M24L416256SA
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PC200
Abstract: No abstract text available
Text: V826416S04SATG 2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE MOSEL VITELIC PRELIMINARY Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization SDRAM Modules ■ Utilizes High Performance 16M x 8 SDRAM in TSOPII-66 Packages
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V826416S04SATG
TSOPII-66
V826416S04SATG
PC200
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Untitled
Abstract: No abstract text available
Text: V437432E24VD 3.3 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE Features Description • 168 Pin Registered ECC 33,554,432 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages ■ Fully PC Board Layout Compatible to INTEL’S
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V437432E24VD
TSOPII-54
-75PC,
-10PC,
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Untitled
Abstract: No abstract text available
Text: V826632B24SA 256 MB 200-PIN DDR UNBUFFERED SODIMM 32M x 64 Features Description • JEDEC 200 Pin DDR Unbuffered Small-Outline, Dual In-Line memory module SODIMM ; 33,554,432 x 64 bit organization. ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages
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V826632B24SA
200-PIN
TSOPII-66
DDR400
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Untitled
Abstract: No abstract text available
Text: V827464N24SC 2.5 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE Features Description • 184 Pin Registered 67,108,864 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 64M x 4 DDR SDRAM in TSOPII-66 and FBGA Package ■ Single +2.5V ± 0.2V Power Supply
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V827464N24SC
TSOPII-66
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Untitled
Abstract: No abstract text available
Text: V826616J24SA 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply
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V826616J24SA
TSOPII-66
DDR400
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Untitled
Abstract: No abstract text available
Text: V826664K24SC 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 67,108,864 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply
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V826664K24SC
TSOPII-66
DDR400
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Untitled
Abstract: No abstract text available
Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656B L T6 Series DESCRIPTION The HYM72V16M656B(L)T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
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16Mx64
PC100
16Mx16
HYM72V16M656B
54-pin
144-pin
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"32Mx32" DRAM 72-pin simm
Abstract: HANBit 72-pin SIMM HMD32M32M16G 1760
Text: HANBit HMD32M32M16G 128Mbyte 32Mx32 72-pin Fast Page Mode 4K Ref. SIMM Design 5V Part No. HMD32M32M16G GENERAL DESCRIPTION The HMD32M32M16G is a 32M x 32bit dynamic RAM high-density memory module. The module consists of sixteen CMOS 16M x 4bit DRAMs in 32-pin TSOPII packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A
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HMD32M32M16G
128Mbyte
32Mx32)
72-pin
HMD32M32M16G
32bit
32-pin
72-pin,
"32Mx32" DRAM 72-pin simm
HANBit 72-pin SIMM
1760
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V43658R04VATG-75PC
Abstract: No abstract text available
Text: MOSEL VITELIC V43658R04VATG-75PC 3.3 VOLT 8M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages
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V43658R04VATG-75PC
PC133
TSOPII-54
V43658R04VATG-75PC
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are
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HYM532124A
32-bit
HY5118164B
HYM532124AW/ASLW
HYM532124AWG/ASLWG
HYM532124A
HYM532124AT
A0005
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HYM53
Abstract: No abstract text available
Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each
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HYM536A810A
36-bit
HYM536A81OA
HY5117400A
HYM536A81OAM/ASLM
HYM536A810AMG/ASLMG
HYM536A800A/ASL
1CF16-10-AUG95
HYM53
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Untitled
Abstract: No abstract text available
Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
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HYM532224A
32-bit
HY5117804B
HYM532224AE/ASLE/ATE/ASLTE
HYM532224AEG/ASLEG/ATEG/ASLTEG
171M1N
DD054M
1CE13-10-0EC94
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Untitled
Abstract: No abstract text available
Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for
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HYM532220A
32-bit
HY5118160B
HYM532220AW/SLW/TW/SLTW
HYM532220AWG/SLWG
880mW
825mW
70MIN.
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
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HYM53221OA
32-bit
HYM53221
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
4b750Afl
1CE13-10-DEC94
HYM532210A
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HYM532414
Abstract: HY5117404
Text: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted
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HYM532414
32-bit
HY5117404A
HYM532414TNG/SLTNG
A0-A10)
DQ0-DQ31)
1CE13-10-DEC94
YM532414
HY5117404
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