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    Eaton Corporation XTSR032BCA

    Contactors - Electromechanical MMCFVR 25-32A B-MMP C-Cont 110/50 120/60
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    Mouser Electronics XTSR032BCA
    • 1 $1139.37
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    Eaton Corporation XTSR032BCB

    Contactors - Electromechanical MMCFVR 25-32A B-MMP C-Cont 220/50 240/60
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    Mouser Electronics XTSR032BCB
    • 1 $1139.37
    • 10 $1092.15
    • 100 $1092.15
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    Eaton Corporation XTSR032BCF

    Contactors - Electromechanical MMC FVR 25-32A B-MMP C-Cont 230/50
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics XTSR032BCF
    • 1 $1139.37
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    Eaton Corporation XTSR032BCT

    Contactors - Electromechanical MMC FVR 25-32A B-MMP C-Cont 24/50 24/60
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics XTSR032BCT
    • 1 $1139.37
    • 10 $1092.15
    • 100 $1092.15
    • 1000 $1092.15
    • 10000 $1092.15
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    Eaton Corporation XTSR032BCE

    Contactors - Electromechanical MMC FVR 25-32A B-MMP C-Cont 208/60
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics XTSR032BCE
    • 1 $1212.09
    • 10 $1161.86
    • 100 $1161.86
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    TSR032 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AM28F020

    Abstract: No abstract text available
    Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		Am28F020 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29LV104B 4 Megabit 512 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


    Original     		Am29LV104B 32-Pin moLV104B-55R Am29LV104B-70 Am29LV104B-90 Am29LV104B-120 PDF

    Product Selector Guide

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


    Original     		Am29LV102B 32-Pin Am29LV102B-55R Am29LV102B-70 Am29LV102B-90 Am29LV102B-120 Product Selector Guide PDF

    AM29F010

    Abstract: AM29F01055 Am2F010
    Text: FINAL Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ High performance


    Original     		Am29F010 AM29F01055 Am2F010 PDF

    am29f040b

    Abstract: Publication# 19957 Am29F040
    Text: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology


    Original     		Am29F040B Am29F040 pre032 TSR032 32-Pin 16-038-TSOP-2 Publication# 19957 Am29F040 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMDH Am29LV001 B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Unlock Bypass Mode Program Command — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


    OCR Scan     		Am29LV001 Am29LV001B PDF

    Untitled

    Abstract: No abstract text available
    Text: AMDB Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and


    OCR Scan     		Am29LV102B 32-Pin TSR032) AM29LV102B-55R AM29LV102B-70 AM29LV102B-90 AM29LV102B-120 PDF

    Am26F020

    Abstract: No abstract text available
    Text: FINAL Am28F020 Advanced 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory n j ïie ls DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access time ■ CMOS Low power consumption ■ ■ Compatible with JEDEC-standard byte-wide


    OCR Scan     		Am28F020 32-Pin Am26F020 PDF

    Untitled

    Abstract: No abstract text available
    Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current


    OCR Scan     		Am28F020A 32-pin PDF

    am29f040b

    Abstract: No abstract text available
    Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


    OCR Scan     		Am29F040B Am29F040 PDF

    AM29F01OA-45

    Abstract: No abstract text available
    Text: AMDZ1 Am29F010A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations Embedded Algorithms — Embedded Erase algorithm automatically


    OCR Scan     		Am29F010A Am29F010 20-year Am29F01 AM29F01OA-45 PDF

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase


    OCR Scan     		Am28F256 32-Pin AM28F256 PDF

    IC 555 architecture

    Abstract: No abstract text available
    Text: AMDH Am29LV001 B 1 Megabit 128 K * 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ ■


    OCR Scan     		Am29LV001 IC 555 architecture PDF

    Am29F010 Rev. A

    Abstract: No abstract text available
    Text: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements


    OCR Scan     		20-year 32-pin Am29F010A Am29F010 Rev. A PDF

    Untitled

    Abstract: No abstract text available
    Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e


    OCR Scan     		32-Pin Am28F010A PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMD Am29LV010B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


    OCR Scan     		Am29LV010B rangeSR032) 32-Pin Am29LV01 Am29LV010B-45R OB-55 Am29LV010B-70 Am29LV010B-120 PDF

    AM29F040B

    Abstract: No abstract text available
    Text: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology


    OCR Scan     		Am29F040B Am29F040 twHwi-12- PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMDZ1 Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements


    OCR Scan     		Am29F010 PDF

    am29lv040b

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29LV040B 4 Megabit 512 K x 8-Bit CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


    OCR Scan     		Am29LV040B 32-Pin 16-038FPO-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current


    OCR Scan     		Am28F020A 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current


    OCR Scan     		Am28F512A 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMDZ1 Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements


    OCR Scan     		Am29F010 5555h PDF

    Untitled

    Abstract: No abstract text available
    Text: AMD£I A m 2 9 F 0 1 0 A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements


    OCR Scan     		Am29F010 20-year Am29F010A PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance


    OCR Scan     		Am28F010A 32-pin PDF