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    TSSOP8 IGBT FLASH Search Results

    TSSOP8 IGBT FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TSSOP8 IGBT FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    igbt xenon tube

    Abstract: xenon tube Xenon Flash 6v xenon flash circuit TIG030TS Xenon flash tube Xenon igbt flash TIG032TS TIG058E8
    Text: T OP I C S News Release Product Topics 22.January 2009 release Ultra Small Xenon Flash IGBT for Cell Phone Achieved ICP=150A with small 2.8mm x 2.9mm size first in the industry Mount height 0.9mm! The industry’s smallest size* that is optimal for mounting on cell phones with a camera.


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    PDF TIG058E8 TIG058E8 00V/100A 0000W RE0208DA 33nsec OD-323 TIG030TS TIG032TS igbt xenon tube xenon tube Xenon Flash 6v xenon flash circuit TIG030TS Xenon flash tube Xenon igbt flash TIG032TS

    Xenon Flash 6v

    Abstract: xenon Xenon Flash xenon 5W 12V TIG032TS TIG030TS TIG014SS TIG058E8 RE0208DA IGBT 320V
    Text: T OP I C S 新 闻 发 表 新 商 品 2009年1月22日新闻发表 手机用超小型Xenon Flash IGBT 它以业界最小2.8mm x 2.9mm实现了ICP=150A 安装高度实现了0.9mm! 最适用于带照相功能的手机。它实现了业界最小*安装面积。*: 截至2009年1月22日


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    PDF TIG058E8 00V/100A 0000W LED6000 12mm2 TIG030TS Xenon Flash 6v xenon Xenon Flash xenon 5W 12V TIG032TS TIG030TS TIG014SS TIG058E8 RE0208DA IGBT 320V

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


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    PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V

    CY25BAH-8F

    Abstract: CY25BAH-8F-T13 TSSOP8 IGBT FLASH
    Text: CY25BAH-8F Nch IGBT for Strobe Flash REJ03G0284-0300 Rev.3.00 Nov 29, 2005 Features • Small surface mount package TSSOP-8  Terminal Pb free: PTSP0008JA-A (8P2J-A)  Complete Pb free: PTSP0008JB-B (TTP-8DV) • VCES : 400 V • ICM : 150 A • Drive voltage : 2.5 V


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    PDF CY25BAH-8F REJ03G0284-0300 PTSP0008JA-A PTSP0008JB-B CY25BAH-8F CY25BAH-8F-T13 TSSOP8 IGBT FLASH

    STROBE FLASHER USE IGBT

    Abstract: CY25BAH-8F CY25BAH-8F-T13 400UF
    Text: CY25BAH-8F Nch IGBT for Strobe Flasher REJ03G0284-0100 Rev.1.00 Aug.20.2004 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 2.5 V Outline TSSOP-8 4 3 2 1 5 8 1,2,3,4 : Collector 5,6 : Emitter 7 : Emitter


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    PDF CY25BAH-8F REJ03G0284-0100 STROBE FLASHER USE IGBT CY25BAH-8F CY25BAH-8F-T13 400UF

    led strobe light circuit diagram

    Abstract: RJP4002ASA Diagram igbt flash RD3CYD08 RJP4002ASA-00-Q0
    Text: RJP4002ASA Nch IGBT for Strobe Flash REJ03G1473-0100 Rev.1.00 Oct 13, 2006 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 2.5 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>)


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    PDF RJP4002ASA REJ03G1473-0100 PTSP0008JB-B led strobe light circuit diagram RJP4002ASA Diagram igbt flash RD3CYD08 RJP4002ASA-00-Q0

    RD5CYD08

    Abstract: RD5CYDT08 RJP4003ASA RJP4003ASA-0-Q0
    Text: RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0100 Rev.1.00 Oct 13, 2006 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 4 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>)


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    PDF RJP4003ASA REJ03G1475-0100 PTSP0008JB-B RD5CYD08 RD5CYDT08 RJP4003ASA RJP4003ASA-0-Q0

    STROBE FLASHER USE IGBT

    Abstract: CY25BAJ-8F CY25BAJ-8F-T13
    Text: CY25BAJ-8F Nch IGBT for Strobe Flasher REJ03G0285-0100 Rev.1.00 Aug.20.2004 Features • • • • Small surface mount package TSSOP-8 VDSS : 400 V ICM : 150 A Drive voltage : 4 V Outline TSSOP-8 4 3 2 1 5 8 1,2,3,4 : Collector 5,6,7 : Emitter 8 : Gate


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    PDF CY25BAJ-8F REJ03G0285-0100 STROBE FLASHER USE IGBT CY25BAJ-8F CY25BAJ-8F-T13

    RD5CYD08

    Abstract: RD5CYDT08 RJP4003ASA RJP4003ASA-0-Q0 TSSOP8 IGBT FLASH
    Text: RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0200 Rev.2.00 Nov 10, 2008 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 4 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>)


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    PDF RJP4003ASA REJ03G1475-0200 PTSP0008JB-B RD5CYD08 RD5CYDT08 RJP4003ASA RJP4003ASA-0-Q0 TSSOP8 IGBT FLASH

    CY25BAJ-8F

    Abstract: CY25BAJ-8F-T13
    Text: CY25BAJ-8F Nch IGBT for Strobe Flash REJ03G0285-0200 Rev.2.00 May 23, 2005 Features • Small surface mount package TSSOP-8  Terminal Pb free: PTSP0008JA-A (8P2J-A)  Complete Pb free: PTSP0008JB-B (TTP-8DV) • VDSS : 400 V • ICM : 150 A • Drive voltage : 4 V


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    PDF CY25BAJ-8F REJ03G0285-0200 PTSP0008JA-A PTSP0008JB-B Tst-900 Unit2607 CY25BAJ-8F CY25BAJ-8F-T13

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


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    PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


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    PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


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    PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    FGW15N40

    Abstract: 15N40 TSSOP8 IGBT FLASH
    Text: FGW15N40 Strobe Flash N-Channel Logic Level IGBT Features General Description „ VCE SAT = 5.0V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have


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    PDF FGW15N40 FGW15N40 15N40 TSSOP8 IGBT FLASH

    Untitled

    Abstract: No abstract text available
    Text: FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description „ VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have


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    PDF FGW15N40A

    CY25BAH-8F

    Abstract: CY25BAH-8F-T13 cy25ba
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    scr trigger battery charger

    Abstract: scr use in battery charger Battery Charger by using SCR Battery Charger with SCR scr battery charger circuit diagram charger circuit with scr AT1453 AT1453AP AT1453BP scr battery charger
    Text: AT1453 Preliminary Product Information Photoflash Capacitor Charger for DSC Features General Description • 2.5 to 5.5V supply voltage operating range. • Low current consumption: 1mA in operation, • 50 kHz or 100kHz operation frequency . • Built-in maximum duty control.


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    PDF AT1453 100kHz AT1453 scr trigger battery charger scr use in battery charger Battery Charger by using SCR Battery Charger with SCR scr battery charger circuit diagram charger circuit with scr AT1453AP AT1453BP scr battery charger

    scr battery charger

    Abstract: AT1452AP scr trigger battery charger scr battery charger circuit diagram Battery Charger Circuit Using SCR charger circuit with scr photoflash charger SCHEMATIC circuit scr oscillator AT1452 AT1452BP
    Text: AT1452 Preliminary Product Information Photoflash Capacitor Charger for DSC Features General Description • 2.5 to 5.5V supply voltage operating range. • Low current consumption: 1mA in operation, • 50 kHz or 100kHz operation frequency . • Built-in maximum duty control.


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    PDF AT1452 100kHz AT1452 swi47 scr battery charger AT1452AP scr trigger battery charger scr battery charger circuit diagram Battery Charger Circuit Using SCR charger circuit with scr photoflash charger SCHEMATIC circuit scr oscillator AT1452BP

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    8g136

    Abstract: toshiba week code marking
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)


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    PDF GT8G136 dissipationt10 8g136 toshiba week code marking

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


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    PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101

    Untitled

    Abstract: No abstract text available
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)


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    PDF GT8G136

    Untitled

    Abstract: No abstract text available
    Text: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability C C C VCE 400V ICP 150A C Low Gate Drive Strobe Flash Applications TSSOP-8 E E E C G G E Absolute Maximum Ratings


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    PDF AP28G40GEO 00V/us, 0V-30V)

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF