SY100E445
Abstract: SY10E445
Text: * 4-BIT SERIAL/PARALLEL CONVERTER SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION On-chip clock -h4 and +8 Extended 100E V ee range of -4 .2 V to -5 .5 V 2.5Gb/s data rate capability Differential clock and serial inputs Vbb output for single-ended use Asynchronous data synchronization
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SY10E445
SY100E445
75ki2
MC10E/100E445
800ps
1050ps
SY10E445JC
J28-1
SY100E445
SY10E445
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H136
Abstract: E136 H-136 SY100E136 SY100E136JC SY10E136 SY10E136JC SY10E136JCTR up down counter truth table counter schematic
Text: * 6-BIT UNIVERSAL UP/DOWN COUNTER SYNERGY S E M IC O N D U C T O R DESCRIPTION FEATURES • 550MHz count frequency ■ Extended 100E V ee range of -4.2V to -5.5V ■ Look-ahead-carry input and output ■ Fully synchronous up and down counting ■ Asynchronous Master Reset
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SY10E136
SY100E136
550MHz
SY10/100E136
E136s
24bit
24-bit
00Dnfl2
H136
E136
H-136
SY100E136
SY100E136JC
SY10E136JC
SY10E136JCTR
up down counter truth table
counter schematic
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EL34 application notes
Abstract: ECL IC NAND
Text: * SYNERGY E C L in P S LITE FAMILY S P E C IF IC A T IO N S S E M IC O N D U C T O R DESCRIPTION FEATURES • 2 7 5 p s p a c k a g e g a te d e la y s ■ 2 G H z + flip -flo p to g g le fre q u e n c ie s ■ S p a c e e ffic ie n t 8 -,1 6 -,2 0 -p in S O IC p a c k a g e s
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500lfpm
100EL
EL34 application notes
ECL IC NAND
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oh201
Abstract: No abstract text available
Text: FR A C TIO N A L-/V S Y N T H E S IZ E R M ODEL F N 3 0 0 0 -X X X X FEATURES: • VERY LOW PHASE NOISE ■ EXCELLENT STABILITY ■ COAXIAL RESONATOR OSCILLATOR ■ OPTIMIZED BANDWIDTHS ■ LOOP NOISE INDEPENDENT OF STEP SIZE DESCRIPTION: Synergy's FN3000 series of Fractional-N Synthesizers consist of a transistor oscillator with a High Q ceramic
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FN3000
oh201
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Untitled
Abstract: No abstract text available
Text: * SY10L422-4/5/7 SY100L422-4/5/7 SY101L422-4/5/7 LOW POWER 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The Synergy SY10L/100L/101L422 are low-power versions of Synergy's ultra-high-speed 1,024-bit Random Access Memories RAMs , designed with advanced Emitter
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SY10L422-4/5/7
SY100L422-4/5/7
SY101L422-4/5/7
SY10L/100L/101L422
024-bit
SY10L/100L7101L422
256-words-by-4-bits,
10/100/101K
SY10L/100L/101L422-4DCS
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Untitled
Abstract: No abstract text available
Text: * SY10E131 SY100E131 4-BIT D FLIP-FLOP SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • 1100MHz min. toggle frequency ■ Extended 100E V ee range of -4.2V to -5.5V ■ Differential output ■ Individual and common clocks ■ Individual asynchronous reset ■ Paired asynchronous sets
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SY10E131
SY100E131
1100MHz
MC10E/100E131
28-pin
10/100E
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Untitled
Abstract: No abstract text available
Text: V 1.25Gbps HIGH-SPEED LIMITING POST AMPLIFIER SYNERGY P R E L IM IN A R Y SY88913 SEMICONDUCTOR DESCRIPTION FEATURES • Up to 1.25Gbps operation The SY88913 limiting post amplifier with its high gain and wide bandwidth is ideal for use as a post amplifier in
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25Gbps
SY88913
SY88902
SY88904
10-pin
SY88913
25Gbps.
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Untitled
Abstract: No abstract text available
Text: « SY100480-8 SY101480-8 SY100480-10 SY101480-10 H r p i rj a lt/l ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 8/10ns max. Chip select access time, tAc: 4/5ns max. Choice of two edge rates: 800 or I500ps typ.
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SY100480-8
SY101480-8
SY100480-10
SY101480-10
8/10ns
I500ps
-220mA
SY100480:
SY101480:
SY100480-8DCF
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PKGS-00
Abstract: VCC232
Text: V SYNERGY 1.25Gbps HIGH-SPEED LIMITING POST AMPLIFIER PRELIMINARY SY88903 SEMICONDUCTOR DESCRIPTION FEATURES • Up to 1.25Gbps operation ■ Low noise ■ Chatter-Free LOS Generation ■ Open Collector TTL LOS Output ■ TTL EN Input ■ Differential PECL inputs for data
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25Gbps
SY88903
SY88902
SY88904
10-pin
SY88903
25Gbps.
408-9ep-9i9i
PKGS-00
VCC232
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laser diode driver circuit automatic power control
Abstract: No abstract text available
Text: * L A S E R DSODE SYNERGY S T 8 8 90 5 C O N T R O L L E R W I T H APC S E M IC O N D U C 1 O B EESCR F EA TU R E S • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Monitor Diode power control circuit ■ Designed for use with SY88902 and SY88903
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SY88903
SY88902
10-pin
SY88905
SY88903
SY88905
laser diode driver circuit automatic power control
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SY100EL35
Abstract: SY100EL35ZC SY10EL35 SY10EL35ZC
Text: This Material Copyrighted By Its Respective Manufacturer PRELIMINARY SY10EL35 SY100EL35 * SYNERGY SEM IC O N D U C TO R AC ELECTRICAL CHARACTERISTICS V EE = V E E Min. to V E E (Max.); V C C = G N D Parameter Sym bol fM A X M axim um T og gle F req u en cy
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SY10EL35
SY100EL35
SY10EL35ZC
SY100EL35ZC
SY100EL35
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Untitled
Abstract: No abstract text available
Text: * QUINT EXCLUSIVE OR/NOR GATE SYNERGY SY100S307 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1000ps The SY100S307 is an ultra-fast quint exclusive-O R / NOR gate designed for use in high-perform ance ECL system s. A function output that is the w ire-O R result of the
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SY100S307
1000ps
SY100S307
75Ki2
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Untitled
Abstract: No abstract text available
Text: * QUINT EXCLUSIVE OR/NOR GATE SYNERGY SY100S307 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1000ps The SY100S307 is an ultra-fast quint exclusive-O R / NOR gate designed for use in high-perform ance ECL system s. A function output that is the w ire-O R result of the
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SY100S307
1000ps
SY100S307
75Ki2
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Untitled
Abstract: No abstract text available
Text: SY10422-2.5/3/4/5/7 SY100422-2.5/3/4/5/7 SY101422-2.5/3/4/5/7 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 2.5/3/4/5/7ns max. T h e S yn e rg y S Y 1 0 /1 0 0 /1 0 1 4 2 2 are 1 0 24-b it R andom A ccess M e m orie s R A M s , d e s ig n e d w ith ad va n ce d E m itter
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SY10422-2
SY100422-2
SY101422-2
500ps
-250mA,
-200mA
000107b
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Untitled
Abstract: No abstract text available
Text: SYNERGY ¿'Zììlt : I NPUT A N O , H A N D S E M IC O N D U C TO R FEA TU R E S D ES C R IPTIO N 240ps propagation delay High bandwidth output transitions Internal 75KÎÎ input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package PIN C O N F IG U R A T IO N /B L O C K D IA G R A M
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240ps
10EL04ZC
10EL04ZCTR
SY100EL04ZC
100EL04ZCTR
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10H84
Abstract: No abstract text available
Text: *SYNERGY CLOCK SYSTEM DESIGN A P P L I C A T I O N S BR I EF AB-02 SEMICONDUCTOR INTRODUCTION C lo c k d is trib u tio n is a s ig n ific a n t d e s ig n c h a lle n g e fo r s yste m s o p e ra tin g a b o v e 2 5 M H z . T h e S y n e rg y P E C L se rie s of c lo c k c h ip s s im p lifie s d e s ig n s by s ig n ific a n tly
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AB-02
536rcw+
10H84
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Untitled
Abstract: No abstract text available
Text: « Clockworks ' PRELIMINARY S Y 1 0/10 0 E L 1 1 1:2 DIFFERENTIAL FANOUT BUFFER SYNERGY SEM IC O N D U C TO R D ES C R IPTIO N F E A TU R E S 265ps propagation delay 5ps skew between outputs High bandwidth output transitions Internal 75KQ Input pull-down resistors
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265ps
SY10EL/100EL11
L11ZC
100EL11ZC
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F100K
Abstract: SY100S304 SY100S304DC SY100S304JC
Text: * QUINT AND/NAND GATE SYNERGY SEMICONDUCTOR FEA TU RES SY100S304 D E S C R IP T IO N Max. propagation delay of I050ps Ie e min. of -60mA ESD protection of 2000V Extended supply voltage option: — VEE = -4.2V to -5.46V Voltage and temperature compensation for
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SY100S304
I050ps
-60mA
F100K
SY100S304
SY100S304DC
D24-1
SY1O0S304FC
F24-1
F100K
SY100S304JC
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Untitled
Abstract: No abstract text available
Text: PROGRAMMABLE SYNERGY F RE Q UE N CY S YNTHESI ZER 25MHz to 400MHz S E M IC O N D U C T O R C lo c k w o rk s SY89429A DESCRIPTION FEATURES Improved jitter performance over SY89429 25 to 400MHz differential PECL outputs ±25ps peak-to-peak output jitter
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25MHz
400MHz)
SY89429A
SY89429
400MHz
28-pin
AN-03)
9429A
10MHz
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Untitled
Abstract: No abstract text available
Text: « 9-BIT BUFFER SYNERGY SY100S322 SEMICONDUCTOR DESCRIPTION FEATURES The SY100S322 is an ultra-fast buffer designed for use in high-performance ECL systems. The device provides nine non-inverting buffers with single-ended outputs. The inputs on the device have 75K£1 pull-down resistors.
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SY100S322
SY100S322
700ps
-55mA
F100K
T0013Ã
SY100S322DC
D24-1
SY100S322FC
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E195
Abstract: SY100E195 SY100E195JC SY10E195 SY10E195JC SY10E195JCTR
Text: * SYNERGY P R O G RAM M A BLE DELAY CHIP S E M IC O N D U C T O R F E A TU R E S Up to 2ns delay range ESD protection of 2000V Fully compatible with Motorola MC10E/100E195 PIN C O N FIG U R A T IO N oj Û Di ^ 26 Do 27 co *<r m Cl Q Q q fs. j z q n n n n n n n
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SY10E195
SY100E195
20ps/digital
MC10E/100E195
SY10/100E195
SY10E195
SY10E195JC
J28-1
SY10E195JCTR
E195
SY100E195
SY100E195JC
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e104
Abstract: SY100E104 SY10E104 SY10E104JC
Text: • QUINT 2-INPUT AND/NAND GATE SYNERGY SY10E104 SY100E104 SEMICONDUCTOR FEA TU RES D E S C R IP T IO N 600ps max. propagation delay True and complementary outputs OR/NOR function outputs ESD protection of 2000V Fully compatible with Industry standard 10KH,
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SY10E104
SY100E104
600ps
MC10E/100E104
SY100E104
SY10E104JC
J28-1
SY100E104JC
e104
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Untitled
Abstract: No abstract text available
Text: * QUINT 2-INPUT SYNERGY j V 1O E 104 AND/N AND GATE SY100EÌ04 S E M IC O N D U C T O R F EA TU R E S • 600ps max. propagation delay ■ Extended 100E V ee range of -4.2V to -5.5V ■ True and complementary outputs ■ OR/NOR function outputs D ES C R IPTIO N
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SY100E
600ps
MC10E/100E104
28-pin
10/100E
outp425
SY10E104JC
SY10E104JCTR
SY100E104JC
100E104JCTR
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SY100E101
Abstract: SY101E101 SY10E101
Text: A I I A H V I IKIDIIT SY10E101 SY100E101 QUAD 4-INPUT OR/NOR GATE SYNERGY S E M IC O N D U C T O R ° • ■ ■ ■ 500 ps Max. Propagation Delay. True and Complementary outputs. ESD protection of 2000V. Fully compatible with industry standard 10KH, 100K I/O
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SY10E101
SY100E101
SY101E101
SY101E101:
MC10E/100E101.
TheSYI0E/100E/101E101
SY100/101E101
SY101E101
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