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    TY 617 EQUIVALENT Search Results

    TY 617 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TY 617 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LE ATB S2W

    Abstract: Q65110A8183 leatbs2w
    Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE ATB S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe


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    PDF JESD22-A114-D D-93055 LE ATB S2W Q65110A8183 leatbs2w

    Untitled

    Abstract: No abstract text available
    Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE ATB S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe


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    PDF JESD22-A114-D D-93055

    Untitled

    Abstract: No abstract text available
    Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W, LE T S2W, LE B S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe


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    PDF D-93055

    J-STD-020B

    Abstract: LE ATB S2W-JW-1 LBMB-24 G
    Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE ATB S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe


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    PDF JESD22-A114-D D-93055 J-STD-020B LE ATB S2W-JW-1 LBMB-24 G

    NTC Thermistor S 234

    Abstract: KY 3001/A mp3 player one chip ntc 10 epcos 5 x 7 led dot matrix A114 es als 004 b 537 IEC 62471 KY Series
    Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W, LE T S2W, LE B S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe


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    PDF D-93055 NTC Thermistor S 234 KY 3001/A mp3 player one chip ntc 10 epcos 5 x 7 led dot matrix A114 es als 004 b 537 IEC 62471 KY Series

    OHL02520

    Abstract: nm533 LETS2W
    Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W LE T S2W LE B S2W LE A S2W LE T S2W; LE B S2W Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe


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    PDF JESD22-A114-D D-93055 OHL02520 nm533 LETS2W

    D821A

    Abstract: d823a
    Text: • 1N821 THRU 1N829 AVAILABLE IN CD821 JANC thru • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS CD829A • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES


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    PDF 1N821 1N829 CD821 1N829 CD829A CD821 D821A d823a

    4617C

    Abstract: No abstract text available
    Text: CD4614 1N4614 THRU 1N4627 AVAILABLE IN JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4627 • ELECTRICALLY EQUIVALENT TO 1N4614 THRU 1N4627 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES


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    PDF 1N4614 1N4627 1N4627 CD4614 CD4627 CD4614 4617C

    la4603

    Abstract: Design with PIN diode limiter alpha Alpha Industries pin diodes 20/LA4606
    Text: 03Alpha Limiter Diodes CLA Series Features • Low Loss ■ 4 kW Coarse Limiters ■ 200 Watt Midrange Limiters ■ 10 mW C le an -U p Limiters Description Chip Dimensions Alpha has pioneered the microwave limiter diode. Because all phases of manufacturing, from design


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    PDF 03Alpha CLA4603 CLA4606, la4603 Design with PIN diode limiter alpha Alpha Industries pin diodes 20/LA4606

    zener diode 47-10

    Abstract: 1N4099 1N4135 CD4099 CD4100 CD4101 CD4102 CD4103 CD4104 CD4105
    Text: CD4099 1N4099 THRU 1N4135 AVAILABLE IN JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4135 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135


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    PDF 1N4099 1N4135 1N4135 CD4099 CD4135 CD4099 60MPENSHTED zener diode 47-10 CD4100 CD4101 CD4102 CD4103 CD4104 CD4105

    D5250

    Abstract: 5225B 5221B CD5221B
    Text: CD5221B ZENER DIODE CHIPS ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE thru CD5272B ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B GENERAL PURPOSE 500 mW CHIPS COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES ELECTRICAL CHARACTERISTICS @ 25 C, unless otherwise specified


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    PDF 1N5221B 1N5272B CD5221B CD5272B 5221B 5222B 5223B 5224B 5225B C05226B D5250

    1N409

    Abstract: cd 4560 D4126 4106C
    Text: • 1N4099 THRU 1N4135 AVAILABLE IN CD4099 JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4135 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135


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    PDF 1N4099 1N4135 CD4099 CD4135 1N4135 1N409 cd 4560 D4126 4106C

    Untitled

    Abstract: No abstract text available
    Text: • 1N52383 THRU 1N5314 AVAILABLE IN JANHC AND JANKC CD5283 thru • CURRENT REGULATOR CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5283THRU 1N5314 CD5314 • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE


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    PDF 1N52383 1N5314 CD5283 CD5314 1N5283THRU 1N5314 CD5291

    PUT 2N6027

    Abstract: PUT 2N6027/2N6028 equivalent transistor of 2n6027 2N6027-2N6028 N6028 UNITRODE U-66 PUT 2N6028 unijunction application note 2N6027 PUT specifications PUT Oscillator 2n6027
    Text: PUTs 2N6027-2N6028 Planar, TO-92, Plastic FEATURES DESCR IPTIO N • • • • • • The Unitrode Programmable Unijunction Transistor is today’s preferred device for low cost tim ing circuits, oscillators, sensing circu its and a wide range of other applications


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    PDF 2N6027-2N6028 150nA PUT 2N6027 PUT 2N6027/2N6028 equivalent transistor of 2n6027 2N6027-2N6028 N6028 UNITRODE U-66 PUT 2N6028 unijunction application note 2N6027 PUT specifications PUT Oscillator 2n6027

    Untitled

    Abstract: No abstract text available
    Text: PIN RADIATION DETECTORS Features • High Photocurrent Sensitivity • High Reliability Construction • Fast Rise Time • Wide Dynamic Range • Hardness to Neutron Bombardment • Low Operating Voltage Description Silicon PIN devices are effective detectors


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    PDF UM9441

    TS1902

    Abstract: TS1222
    Text: CPCIare OptoMOS TS Series GORPORATIO N OptoMOS® “T S ” Series Multifunction Solid State Telecom Switches DESCRIPTION CP Clare’s “TS” series telecom switches provide optimal function density for tip/ring interface circuits. The “TS” series incorporates an optically isolated


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    PDF

    IAA110P

    Abstract: No abstract text available
    Text: CPOare IAA110P/IBB110P/IAB110P C O R P O R A T I O N OptoMOS IAA110P/IBB110P/IAB110P Multifunction Solid State Integrated Switches DESCRIPTION CP Clare’s OptoMOS® family of multifunction solid state integrated switches consolidate the functions of two solid state relays and bi-directional


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    PDF IAA110P/IBB110P/IAB110P IAA110P/IBB110P/IAB110P IAA110P) IBB110P) IAB110P) IAA110P, IBB110P IAB110P 100mA IAA110P

    2N6546

    Abstract: 2N6547 180I 20C1 2N5875 2N5877
    Text: POWER TRANSISTORS 2N6546 2N6547 15A, 850V, Fast Switching, Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power tra n s is to rs co m bin e fa s t s w itc h in g , low s a tu ra tio n voltage and rugged Es/b ca p a b ility . They are designed fo r use in o ff-lin e power


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    PDF N6546 2N6547 2N6546 500kHz 1N5820 1N4937 2N6547 180I 20C1 2N5875 2N5877

    ty 617 equivalent

    Abstract: B0140 MT619 FMMT619
    Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSU E 3 - NOVEMBER 1995_ FEATURES * 625m W POWER DISSIPATION * * * * * lc CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed)


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    PDF FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 50mSl FMMT625 ty 617 equivalent B0140 MT619

    1032

    Abstract: No abstract text available
    Text: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 600 S E R IE S , 300V M ED IU M D U TY, 0.375" PITCH tit 1 I t 5 t w £ i i _ '_ !_ • ■ _ ■ CHARACTERISTICS T yp e of B lock Direct Mount Flat Base Painted, Nylon Unpainted, Nylon


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    PDF 611-BU 618-BU 614-BU 615-BU P0621 P0628 P0624 P0625 630-BU 1032

    nas 1031

    Abstract: AM-500GC AM-500MC AM-500MM IVO GmbH CA408
    Text: l-y i [d Va ^ n^ fL | *>J Ultra-Fast Microelectronic Operational Amplifiers A M -500 Series FEATURES • • • • • • 200 nsec. Settling to .01% 1000 V//jsec. Slew Rate 100 M H z min. G ain-B an dw idth 106 O pe n Loop Gain 1/j V / ° C Drift *50 mA O utput Current


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    PDF AM-500 000V//jsec. 02048/TEL. 339-9341/TWX 710-346-1953/TLX nas 1031 AM-500GC AM-500MC AM-500MM IVO GmbH CA408

    cp clare relay mercury wetted

    Abstract: design of 4-20mA transmitter for bridge type transducer using op-amp lm358 4-20mA cp clare reed relay 0-10v to 4-20ma clare reed relays SWPS relay, reed 4 to 20ma current source circuit diagram lm358 clare relay mercury
    Text: 2 70% '7 ° l 7 '7 o o < p f par June 1994 Lo t o s No. 15001 CP Clare Application Note LO C H O Linear Optocoupler Isolation amplifier circuit designs for Telecommunications, Industrial, Medical and Instrum entation Systems. The application note covers the LO C H O electrical


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    PDF SSP15" cp clare relay mercury wetted design of 4-20mA transmitter for bridge type transducer using op-amp lm358 4-20mA cp clare reed relay 0-10v to 4-20ma clare reed relays SWPS relay, reed 4 to 20ma current source circuit diagram lm358 clare relay mercury

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    Untitled

    Abstract: No abstract text available
    Text: ste 2 6 m ► LC2M0S High-Speed, Quad SPST Switch ANALOG DEVICES FEATURES 50ns max Switching Time Over Full Temperature Range Low Rqn 3011 typ Single Supply Specifications for + 10.8V to + 16.5V Operation Extended Plastic Temperature Range ( —40°C to +85°C)


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    PDF ADG201HS HI-201 DG271 DG271BK HI1-0201HS-4 PMADG201HSAQ ADG201 PMADG201HSBQ