3055L
Abstract: f 3055l
Text: APM3055LU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =75mΩ(typ.) @ VGS=10V RDS(ON)=100mΩ(typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM3055LU
0V/12A,
O-252
3055L
3055L
f 3055l
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PDF
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Untitled
Abstract: No abstract text available
Text: VND5T035LAK-E Double channel high-side driver with analog current sense for 24 V automotive applications Datasheet − production data Features Max transient supply voltage VCC 58 V Operating voltage range VCC 8 to 36 V Typ on-state resistance per ch. RON
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VND5T035LAK-E
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3015+ 2570 to 3015 MHz Features • high power, +9 dBm typ. • low phase noise • low pushing • protected by US patent 6,790,049 CASE STYLE: GB956 Applications •r&d • lab • instrumentation
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Original
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ZX95-3015+
GB956
ZX95-3015-S+
2002/95/EC)
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PDF
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Untitled
Abstract: No abstract text available
Text: VND5T035LAK-E Double channel high-side driver with analog current sense for 24 V automotive applications Datasheet − production data Features Max transient supply voltage VCC 58 V Operating voltage range VCC 8 to 36 V Typ on-state resistance per ch. RON
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Original
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VND5T035LAK-E
0OWER33/
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3015+ 2570 to 3015 MHz Features • High power, +9dBm typ. • Low phase noise • Low pushing • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications • • • • • R&D LAB Instrumentation
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Original
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ZX95-3015+
GB956
ZX95-3015-S+
2002/95/EC)
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PDF
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Untitled
Abstract: No abstract text available
Text: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3015+ 2570 to 3015 MHz Features • High Power, +9 dBm typ. • Low Phase Noise • Low Pushing • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications • • • • • R&D LAB Instrumentation
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Original
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ZX95-3015+
GB956
ZX95-3015-S+
2002/95/EC)
10KHz
100KHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3015+ 2570 to 3015 MHz Features • High Power, +9 dBm typ. • Low Phase Noise • Low Pushing • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications • • • • • R&D LAB Instrumentation
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Original
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ZX95-3015+
GB956
ZX95-3015-S+
2002/95/EC)
10KHz
100KHz
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PDF
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PL-012
Abstract: No abstract text available
Text: ROS-3050-519+ ROS-3050-519 Surface Mount Voltage Controlled Oscillator Linear Tuning 2570 to 3015 MHz Features • High Power, +9 dBm typ. • Low Phase Noise • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $15.95 ea. QTY 5-49 + RoHS compliant in accordance
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Original
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ROS-3050-519+
ROS-3050-519
CK605
2002/95/EC)
PL-012
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PDF
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k 3369
Abstract: 4001 4002 4007 4011 4013 4017 4030 4052 4060 4066 A 3760 0549 3994 0303 CKR24BX105K MARKING 81 0409 47 005 000
Text: MIL-PRF-39014/2Pin DIP T MAX. L SEE NOTE 1 SEE NOTE 2 .015 MIN .325 .035 .012 .004 H2 MAX. H1 .400 max. See Note 3 .019 .004 .058 .012 60 TYP. 20 Note 1 = Leads centered within .005" Note 2 = Angle shall be 95, +10, -5 Note 3 = .140 .020 inch 3.56 0.51mm for
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MIL-PRF-39014/2Pin
CKR22,
CKR23,
CKR24
MIL-PRF-39014/22
CKR22
CKR24BX394M_
CKR24BX474K_
CKR24BX474M_
CKR24BX564K_
k 3369
4001 4002 4007 4011 4013 4017 4030 4052 4060 4066
A 3760 0549
3994 0303
CKR24BX105K
MARKING 81
0409 47 005 000
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PDF
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0137 0904
Abstract: 3144 0842 A 3120 0504 PM 1027 T 3109 001 CKR22 MIL-PRF-39014 3887 0415
Text: MIL-PRF-39014/2Pin DIP T MAX. L H1 MAX. SEE NOTE 1 SEE NOTE 2 .015 MIN .325 ±.035 .012 ±.004 .400 max. H2 MAX. See Note 3 .019 ±.004 .058 ±.012 60° TYP. ±20° Note 1 = Leads centered within ±.005" Note 2 = Angle shall be 95°, +10°, -5° Note 3 = .140 ±.020 inch 3.56 ±0.51mm for
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Original
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MIL-PRF-39014/2Pin
CKR22,
CKR23,
CKR24
MIL-PRF-39014/22
CKR22
R684M_
CKR24BR824K_
CKR24BR105K_
CKR24BR105M_
0137 0904
3144 0842
A 3120 0504
PM 1027
T 3109 001
CKR22
MIL-PRF-39014
3887 0415
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PDF
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-39014/2Pin DIP T MAX. L H1 MAX. SEE NOTE 1 SEE NOTE 2 .015 MIN .325 ±.035 .012 ±.004 .400 max. H2 MAX. See Note 3 .019 ±.004 .058 ±.012 60° TYP. ±20° Note 1 = Leads centered within ±.005" Note 2 = Angle shall be 95°, +10°, -5° Note 3 = .140 ±.020 inch 3.56 ±0.51mm for
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Original
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MIL-PRF-39014/2Pin
CKR22,
CKR23,
CKR24
MIL-PRF-39014/22
CKR22
BR684M_
CKR24BR824K_
CKR24BR105K_
CKR24BR105M_
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PDF
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-39014/2Pin DIP T MAX. L H1 MAX. SEE NOTE 1 SEE NOTE 2 .015 MIN .325 ±.035 .012 ±.004 .400 max. H2 MAX. See Note 3 .019 ±.004 .058 ±.012 60° TYP. ±20° Note 1 = Leads centered within ±.005" Note 2 = Angle shall be 95°, +10°, -5° Note 3 = .140 ±.020 inch 3.56 ±0.51mm for
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Original
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MIL-PRF-39014/2Pin
CKR22,
CKR23,
CKR24
MIL-PRF-39014/22
CKR22
BR684M_
CKR24BR824K_
CKR24BR105K_
CKR24BR105M_
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PDF
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Untitled
Abstract: No abstract text available
Text: Lambda’s new X10 Series of Power Modules are ideally suited for Telecommunications and Network applications. X10 Series Power Modules PRODUCT SPECIFICATIONS Lambda Electronics Inc. 3055 Del Sol Blvd. San Diego CA 92154 Tel: 619 575-4400 or Toll Free: (800) 275-5224
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Original
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X10-48S05
X10-48S05/PT2
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PDF
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RTM 866 - 480
Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Text: Halbleiter bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964
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OCR Scan
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N914A
N914B
RTM 866 - 480
SAK 110
TAA775G
ITT TCA 700 Y
SAJ 220
SG 2368
ITT 90 38 TCA 700 Y
SAJ110
TCA 430
taa790
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PDF
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darlington tip
Abstract: tip 127 texas BD 147 tip 127 texas instruments TIP5530 tip darlington pnp TIP 122 tip 127 darlington tip 42 TIP NPN BD633
Text: Ptot@ Typ type NPN PNP TIP 35 B TIP 36 B 90 80 25 25 100 1,5 TIP 35 C TIP 36 C 90 100 25 25 100 1,5 TIP 41 TIP 42 65 40 6 15 75 3 TIP 41 A TIP 42 A 65 60 6 15 75 3 TIP 41 B TIP 42 B 65 80 6 15 75 3 TIP 41 C TIP 42 C 65 100 6 15 75 3 TIP 3055 TIP 5530 90 70
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OCR Scan
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BD738
darlington tip
tip 127 texas
BD 147
tip 127 texas instruments
TIP5530
tip darlington pnp
TIP 122 tip 127
darlington tip 42
TIP NPN
BD633
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PDF
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bc 945
Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549
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OCR Scan
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O-92-GehÃ
BC238
BC309
O-126
OT-32.
O-220-A.
OT-78
T0-220-B.
bc 945
BC 945 p
BC 948
BC 937
BD 139 N
ic 933 bd
BD135N
bu110
bd 3055
bd135
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PDF
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BUX 127
Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B
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OCR Scan
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BD244B
BD379
BD380
BD434
BD435
BD440
BD681
BD682
BD712
BD905
BUX 127
bdw 51 52
BDX 241
mje 3001
BUX 115
8D243C
TIP 107
bdx 679
BUX 34
BD 139 140
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PDF
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MJ2955 equivalent
Abstract: MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent
Text: TRANSISTORS BIPOLAR Direct Commercial Equivalent C atalog N um ber M at. Appli. Polarity Pow er Diss. fT Typ ica l @ 25° c: M Hz Free Air v EBO V v CBO VCEQ V V >C Max hFE Max 5>v c e : V 'C B O at max mA VCB Case style 276-2001 ÏN 1 3 0 4 G s NPN 150m W
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OCR Scan
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N1304
150mW
300mA
2SD187
200mW
150mA
2SA221
2SB22/ORN
170mW
2SB22/YEL
MJ2955 equivalent
MPS3640 equivalent
276-2043
MPS918 equivalent
276-2027
2N3053 equivalent
MJE34 pnp
2SB22
2N3055 equivalent
2N3819 equivalent
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PDF
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bd 3055
Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
Text: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160
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OCR Scan
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O-128
O-117
O-129
40PEP
80PEP
OT-32
OT-32
O-66P
bd 3055
BD 139 140
BD NPN transistors
BDX 241
BD139-6
2N3055
BD139
3055 npn
BD 139 N
to128
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PDF
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TI1131
Abstract: terminals of 2n3055 TI-487 TI487 2N4005 2N1047 2N389 2N122 TI-1151 TI-1131
Text: Metal Can Power H igh R eliability Professional Typ es contin u ed Device Type 2N6272 2 N 40 0 3 2N6271 2 N 62 7 3 2N 6 3 2 2 2N 63 2 3 2N 63 2 4 2N 63 2 5 Polarity N PN NPN N PN NPN N PN NPN N PN NPN Outline T O -6 3 T O -6 3 T O -3 T O -6 3 T O -3 T O -6 3
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OCR Scan
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2N6272
2N4003
T0-63
2N6271
2N6273
2N6322
2N6323
2N6324
TI1131
terminals of 2n3055
TI-487
TI487
2N4005
2N1047
2N389
2N122
TI-1151
TI-1131
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PDF
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KD502
Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
Text: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71
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OCR Scan
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101NU70
102NU70
103NU70
104NU70
105NU70
106NU70
107NU70
101NU71
102NU71
103NU71
KD502
KU607
KU605
KFY18
KD503
KF517
KC507
KU608
KD3055
KFY46
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PDF
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Untitled
Abstract: No abstract text available
Text: A 1R F R D 10 5 9 .1 8 ± 0 .Z 5 2.00 TYP. [] [] g PRE p p p C jC A T J p Tinned 5 3 .3 4 PC Board Com ponent 8 7 t=1.B D m m Sid e S h o w n 6 5 REVISION RECORD REV 2. CURRENT RATING ECO DR FT DESCRIPTION CHKD : 1 .5 AMP. : 5 0 M IL L I0 H M 5 MAX. 4. INSULATION RESISTANCE; 1 0 0 0 MEßOHMS MIN 9 6 0 0 VDC.
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OCR Scan
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IL075
GE653A41
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PDF
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RFD3055RLE
Abstract: 12n06 d0420 RFP3055RLE RFD3055RLESM RFP12N06RLE RFD12N06RLE RFD12N06RLESM 12N06RLE
Text: R F D 12N 06R LE , R FD 12N 06R LE S M R F P 12N 06R L E , R F D 3055R L E SE CT OR R FD 3055R LE S M , R F P 3055R L E u a o d i q n M r c r o ° HA RR IS S E M I C O N D May 1992 Features N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs
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OCR Scan
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RFD12N06RLE,
RFD12N06RLESM
RFP12N06RLE,
RFD3055RLE
RFD3055RLESM,
RFP3055RLE
135ii
12N06)
RFD12N06RLESM,
RFD3055RLE
12n06
d0420
RFP3055RLE
RFD3055RLESM
RFP12N06RLE
RFD12N06RLE
RFD12N06RLESM
12N06RLE
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PDF
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3055e mos
Abstract: TK3055E STK3055E 3055E stk3055 3055EN TK3055
Text: SGS-THOMSON ir a u » K S S TK 3055E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss R D S o n Id S TK3055E 60 V 0 .1 5 £1 13 A , „ „ , , , AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE
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OCR Scan
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3055E
TK3055E
OT-82
OT-194
STK3055E.
STK3055E
3055e mos
STK3055E
stk3055
3055EN
TK3055
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PDF
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