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    Untitled

    Abstract: No abstract text available
    Text: SA03 SA03 P r o d uSA03 c t IInnnnoovvaa t i o n FFr roomm Pulse Width Modulation Amplifier FEATURES • WIDE SUPPLY RANGE—16-100V • 30A CONTINUOUS TO 60°C case • 3 PROTECTION CIRCUITS • ANALOG OR DIGITAL INPUTS • SYNCHRONIZED OR EXTERNAL OSCILLATOR


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    PDF RANGE--16-100V TE9493 12-pin 45kHz SA03U

    PZTA93

    Abstract: PZTA92 2B025 SMD IC 2025
    Text: • □□ 2b 0 2 5 735 H A P X N AUER P H I L I P S / D I S C R E T E PZTA92 PZTA93 b?E D SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.


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    PDF 2b025 PZTA92 PZTA93 OT-223) PZTA92 PZTA93 SMD IC 2025

    C6V2 ST

    Abstract: c5v6 st C9V1 ST BZV90 BZV90-C24 C5V1 ST
    Text: • ^53^31 N AMER 002.5751 20b H A P X PHILIPS/DISCRETE b?E BZV90 SERIES D SILICON PLANAR VOLTAGE REGULATOR DIODES S ilicon planar voltage regulator diodes, in a SO T223 plastic envelope, intended fo r sta b iliza tio n applica­ tions in th ic k and th in -film circu its.


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    PDF BZV90 OT223 OT223. 00257S1 C6V2 ST c5v6 st C9V1 ST BZV90-C24 C5V1 ST

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


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    PDF BDS943/945/947 OT223 OT223) BDS944/946/948. BDS943 BDS945 BDS947cation D034b3b btS3T31