Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET ADAPTOR RPC-3.50 JACK - WAVEGUIDE 03K220-UBR All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to Mechanically compatible with Waveguide flange UBR 220 according to IEC 60169-23 RPC-2.92 and SMA IEC 60154 and IEC 153
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03K220-UBR
D-84526
18-49ight
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avalanche photodiode noise factor
Abstract: No abstract text available
Text: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-230-TO52i
avalanche photodiode noise factor
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Avalanche photodiode APD
Abstract: No abstract text available
Text: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR
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SSO-AD-230-TO52
Avalanche photodiode APD
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SSO-AD-500-TO52i
Abstract: No abstract text available
Text: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR
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SSO-AD-500-TO52i
SSO-AD-500-TO52i
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Untitled
Abstract: No abstract text available
Text: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)
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SSO-AD-1100-TO5i
1130m
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TO52 package
Abstract: No abstract text available
Text: SSO-AD-500-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-500-TO52-S1
TO52 package
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Untitled
Abstract: No abstract text available
Text: SSO-AD-800-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 800 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)
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SSO-AD-800-TO5i
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Untitled
Abstract: No abstract text available
Text: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-500-TO52
50oltage
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TO52
Abstract: SSO-AD-230-TO52-S1
Text: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-230-TO52-S1
TO52
SSO-AD-230-TO52-S1
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nir source
Abstract: No abstract text available
Text: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)
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SSO-AD-230
NIR-TO52-S1
nir source
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nir source
Abstract: No abstract text available
Text: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance
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SSO-AD-230-TO52
nir source
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Avalanche photodiode APD
Abstract: No abstract text available
Text: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance
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SSO-AD-500-TO52
Avalanche photodiode APD
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MXT4400
Abstract: MXT3010 AS4400
Text: CellMaker-622TM Release 3.2 operations and reference manual Order Number: 100516-04 December 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the
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CellMaker-622TM
CellMaker-622
MXT4400
MXT3010
AS4400
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baud rate generator
Abstract: AT94K
Text: FPSLIC Baud Rate Generator Features: • • • • • Generates any required baud rate High baud rates at low crystal clock frequencies Uses both internal and external clock sources Supports in both single speed and double speed modes Easy-to-use "Excel" table to calculate any baud rate
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16-bit
04/01/xM
baud rate generator
AT94K
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mega161
Abstract: ne 5555 timer 005D SP15 Bit02 Baud
Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation
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1228C
mega161
ne 5555 timer
005D
SP15
Bit02
Baud
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CELLMAKER-622
Abstract: CRC10 MXT3010
Text: CellMaker-622TM Release 2.1 operations and reference manual Order Number: 100113-15 December 1998 Copyright c 1998 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the
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CellMaker-622TM
CellMaker-622
CRC10
MXT3010
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Cu80
Abstract: diode 4148 specification diode 4148 in 4148 78min UBR100
Text: Technical specification Page 1 Pages 2 Chip for silicon switching diode Type: 1N 4148 chip size 0,28 х 0,28 mm Diameter of wafer Sizes of chip F/2 100 mm 0,28 х 0,28 mm А B 170 ± 10 µm C 50 ± 5 µm D 140 ± 20 µm Metallization of planar side V - Ag
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Ag-15%
Cu80
diode 4148
specification diode 4148
in 4148
78min
UBR100
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005D
Abstract: SP15
Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation
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1228D
005D
SP15
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Untitled
Abstract: No abstract text available
Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation
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1228Dâ
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005D
Abstract: SP15
Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation
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1228B
09/01/xM
005D
SP15
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005D
Abstract: SP15 LCD FREQUENCY COUNTER MODULE
Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation
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1228C
005D
SP15
LCD FREQUENCY COUNTER MODULE
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nir source
Abstract: apd 400- 700 nm
Text: SSO-AD-500 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package TO52 S1 : 2 active area 1) 0,196 mm ∅ 500 µm
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SSO-AD-500
NIR-TO52-S1
nir source
apd 400- 700 nm
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UBR220
Abstract: UBR100 flange waveguide R120 WR75 CIRCULATOR wr75 Racal UBR23 waveguide circulator 18C3041 racal isolator WR75
Text: WAVEGUIDE JU N C T IO N C IR C U L A T O R S AND ISO LA TO R S A full range of waveguide junction circulators and isolators are available covering the frequency range 3.400GHz - 65.000GHz. This range includes units manufactured from investment castings and
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400GHz
000GHz.
WG11A
WR229
3041y
500GHi
20D2041
UBR220
20D2042
UBR220
UBR100 flange
waveguide R120 WR75
CIRCULATOR wr75
Racal
UBR23
waveguide circulator
18C3041
racal isolator
WR75
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waveguide R120 WR75
Abstract: UER84 ubr 100 WR112 flange wr112 UBR100 UBR84 UBR-120 WR137 flange WR90 waveguide
Text: ISO- ORS Integrating a coaxial isolator with a waveguide to coaxial transition provides a com bination which ensures optimum microwave performance. Custom designs are available on request. WAVEGUIDE DESIGNATION British Stand IEC RETMA SPECIFICATION TYPE NO.
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500GHZ
WG11A
WR229
ASD3041
WR137
ACD3041
ACD3042
WR112
AC03043
ACD3044
waveguide R120 WR75
UER84
ubr 100
WR112 flange
UBR100
UBR84
UBR-120
WR137 flange
WR90 waveguide
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