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    UFND210

    Abstract: UFND213
    Text: UFND210 UFND213 POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel DESCRIPTION The U nitrode power MOSFET design utilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rd s m and a high transconductance. FEATURES • For A utom atic Insertion


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    lt 0210

    Abstract: UFND210 unitrode stackable rectifier
    Text: /_ UNITRODE CORP TS 1 7 1 ^3 4 7 ^ 3 001000e] POWER M O S FE T T R A N S IS T O R S H d| io 20Q Volt, 1.5 Ohm N-Channel " * * 35 FEATURES DESCRIPTION • • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		001000e T347Tti3 UFND210 UFND213 lt 0210 unitrode stackable rectifier PDF

    UFN540

    Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
    Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State


    OCR Scan     		U2TA506 U2TA508 U2TA510 861-6S40 UFN540 UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450 PDF