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    UHF POWER TRANSISTOR PNP Search Results

    UHF POWER TRANSISTOR PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    UHF POWER TRANSISTOR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor 805 239

    Abstract: SMD transistor L17 smd L17 npn philips power transistor bd139 philips resistor 2322 smd transistor L6 5- pin smd IC 358 transistor bd139 STR 457 transistor BLV857
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1997 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B


    Original     		PDF BLV857 OT324B SCA53 127067/0/02/pp12 smd transistor 805 239 SMD transistor L17 smd L17 npn philips power transistor bd139 philips resistor 2322 smd transistor L6 5- pin smd IC 358 transistor bd139 STR 457 transistor BLV857

    bvc62

    Abstract: philips 2322 734 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 2322 722 philips power transistor bd139 chip die npn transistor PNP UHF transistor pin configuration transistor BD139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 PINNING SOT262B FEATURES


    Original     		PDF BLV859 OT262B BLV859 SCA51 127041/1200/02/pp16 bvc62 philips 2322 734 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 2322 722 philips power transistor bd139 chip die npn transistor PNP UHF transistor pin configuration transistor BD139

    transistor bd139

    Abstract: bvc62 DK230 philips 2322 734 philips power transistor bd139 UT70-25 smd for bd139 smd L17 npn PNP UHF transistor BD139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor


    Original     		PDF BLV859 SC08a OT262B BLV859 SCA51 127041/1200/02/pp16 transistor bd139 bvc62 DK230 philips 2322 734 philips power transistor bd139 UT70-25 smd for bd139 smd L17 npn PNP UHF transistor BD139

    222259116641

    Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
    Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4


    Original     		PDF BLV859 AN98013 SCA57 222259116641 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module

    BF979

    Abstract: No abstract text available
    Text: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain


    Original     		PDF BF979 BF979 D-74025 20-Jan-99

    BF979

    Abstract: No abstract text available
    Text: BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain


    Original     		PDF BF979 BF979 D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain


    Original     		PDF BF979 BF979 30ake D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BF979 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • High cross modulation performance High power gain Low noise High reverse attenuation 3 2 1 Applications UHF/VHF uncontrolled prestages with low noise and low modulation.


    Original     		PDF BF979 BF970 D-74025 20-Aug-04

    telefun

    Abstract: transistor Bf 979 BF979
    Text: BF 979 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 1 BF979 Marking


    Original     		PDF BF979 D-74025 telefun transistor Bf 979

    BF979

    Abstract: No abstract text available
    Text: BF979 Silicon PNP RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation


    Original     		PDF BF979 BF979 D-74025 31-Oct-97

    2N3866A

    Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427
    Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product


    Original     		PDF 2N3866 2N3866A To-39 28Vdc MRF555 2N4427 MRF4427, 2N3866A RF NPN POWER TRANSISTOR 1000 WATT Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427

    RF 2N3866

    Abstract: 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607
    Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product


    Original     		PDF 2N3866 2N3866A To-39 28Vdc Volta15 RF 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607

    mrf571

    Abstract: 2N3866
    Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product


    Original     		PDF 2N3866 2N3866A To-39 28Vdc MRF545 MRF544 mrf571

    2N4427

    Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
    Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39


    Original     		PDF 2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427

    2N3553 equivalent

    Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
    Text: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz


    OCR Scan     		PDF MM4019 2N3553 MM4019/2N3553 ATC-200 2N3553 equivalent vk-200 ferrite choke vk200* FERROXCUBE VK-200 VK200 MM4019 ATC200

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


    OCR Scan     		PDF NE74000 NE74014 NE740 NE90115 MIL-S-19500. IS12I 427SB5

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


    OCR Scan     		PDF NE74000 NE74014 NE740 NE90115 quali16

    2SA983

    Abstract: No abstract text available
    Text: NEC S IL IC O N T R A N S IS T O R ELECTRON DEVICE 2SA983 RF AMP, FOR UHF TV TUNER PNP SILICON TRANSISTOR “DISK MOLD” The 2SA983 PACKAGE DIMENSIONS is specifically designed fo r UHF RF amplifier applications. The 2SA983 features high power gain, low noise, and


    OCR Scan     		PDF 2SA983 2SA983

    2SC1253

    Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in­


    OCR Scan     		PDF MS7414 NE74000 NE74014 NE74020 NE740 2SC1253 2SC1251 NEC k 2134 transistor NE74020 NE90115 CTO-39 2143E 1321E12

    transistor motorola 114-8

    Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
    Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


    OCR Scan     		PDF MRF861/D 2PHX33727Q-0 transistor motorola 114-8 MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8

    BF681

    Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
    Text: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure


    OCR Scan     		PDF T15/S54. ft-11 569-GS 000s154 hal66 if-11 BF681 telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL

    2sc377

    Abstract: No abstract text available
    Text: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.


    OCR Scan     		PDF 250mm 2SC3771 2SC3772 2SC3773 2SC377 2SC3775 2SC4269 2SC4270 2SC4364 2SC4365

    bvc62

    Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
    Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum


    OCR Scan     		PDF BLV859 OT262B 711002b OT262B. 711Dfi5b bvc62 transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330

    transistor kt 925

    Abstract: 2SC4365 2SC4072
    Text: SAflYO VERY HIGH-FREQUENCY TRANSISTOR SERIES ill Use * * * * * Features $ * # Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Dual TR for diff. amp High power gain Small noise figure High cutoff frequency ( ) ¡Marking on MCP, CP, PCP. For PNP, (-)sign is omitted.


    OCR Scan     		PDF 250mm racteristics/Ta-25 MT930617TR transistor kt 925 2SC4365 2SC4072