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    UHF TO6 Search Results

    UHF TO6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-213UHFMX20-005 Amphenol Cables on Demand Amphenol CO-213UHFMX20-005 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 5 ft Datasheet
    CO-213UHFMX20-050 Amphenol Cables on Demand Amphenol CO-213UHFMX20-050 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 50 ft Datasheet
    CO-213UHFMX20-100 Amphenol Cables on Demand Amphenol CO-213UHFMX20-100 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 100 ft Datasheet
    CO-213UHFMX20-010 Amphenol Cables on Demand Amphenol CO-213UHFMX20-010 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10 ft Datasheet
    CO-213UHFMX20-015 Amphenol Cables on Demand Amphenol CO-213UHFMX20-015 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 15 ft Datasheet

    UHF TO6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: .zSamL-donaucko'i Lpioducti, Una. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 RF Power Transistors 2N5016 High-Power Silicon N-P-N Overlay Transistor For VHF/UHF Communications Equipment Features:


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    2N5016 40OMH* PDF

    Untitled

    Abstract: No abstract text available
    Text: , Unc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RF Power Transistors 2N5090 High-Power Silicon N-P-N Overlay Transistor High-Gain Type for Class A, B, or C Operation in VHF/UHF Circuits


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    2N5090 50ffl 92SS-3620R2 PDF

    mbrai

    Abstract: No abstract text available
    Text: V ishay I ntertechnolog y, I nc . AND TEC O L OGY INNOVAT I N HN Multilayer Ceramic Chip Capacitors VJ 6040 O 19 62-2012 Capacitors - Complete UHF Band Coverage Multilayer Ceramic Chip Antenna for Mobile Devices Key Benefits • • • • • • Small outline 10.5 mm x 15.5 mm x 1.2 mm


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    2011/65/EU VMN-PT0184-1203 15-Jun-10 mbrai PDF

    multi emitter transistor

    Abstract: RF POWER TRANSISTOR 100MHz 7w RF POWER TRANSISTOR NPN rf transistor 320 IC vhf/uhf Amplifier multi-emitter transistor TRANSISTOR HANDLING 2A NTE16003
    Text: NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF–UHF region.


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    NTE16003 175MHz NTE16003 200mA, 150mA, 100MHz 175MHz, multi emitter transistor RF POWER TRANSISTOR 100MHz 7w RF POWER TRANSISTOR NPN rf transistor 320 IC vhf/uhf Amplifier multi-emitter transistor TRANSISTOR HANDLING 2A PDF

    TRANSISTOR C 6090

    Abstract: TRANSISTOR C 6090 npn 2N5090 E200C LC 7621 fh15
    Text: 2 N 5090 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL UHF-VHF amplifier, frequency multiplier or oscillator Amplificateur, multiplicateur de fréquenceou oscillateur VHF-UHF v CEO 30 V 'c 0,4 A ^ 2 1 E ^ mA 10 - 200


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    CB-27 TRANSISTOR C 6090 TRANSISTOR C 6090 npn 2N5090 E200C LC 7621 fh15 PDF

    BFY70

    Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
    Text: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax


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    2N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 BFY70 PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780 PDF

    THB598

    Abstract: C-22-B C22B cb307 THX 230 5352N CB-295 2n 531
    Text: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) 8 7


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    CB-27) CB-307) O-129 CB-295) CB-312) CB-289) CB-286) ICB-298) CB-400) CB-293) THB598 C-22-B C22B cb307 THX 230 5352N CB-295 2n 531 PDF

    SO-104

    Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
    Text: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5


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    BLW11 O-131 O-129 O-117 SO-104 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87 PDF

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


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    000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor PDF

    2n3733

    Abstract: "vhf,uhf transistor" 4 watt VHF 100-400MHz
    Text: GAE GREAT AMERICAN ELECTROINCS 2N3733 Silicon NPN high power VHF/UHF transistor 2N3733 is intended for class “C” amplifier, auto-oscillator or frequency multiplier circuits in the 100-400 Mhz region. Output Power: Output Power: Frequency Range: Voltage:


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    2N3733 2N3733 400Mhz) 150Mhz) "vhf,uhf transistor" 4 watt VHF 100-400MHz PDF

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756 PDF

    ECG123AP

    Abstract: ECG159 transistor ECG128 ECG128 ecg123A ECG123 ECG152 ECG127 transistor ECG123 transistor ECG123a
    Text: Transistors cont'd ECG Type ECG107 Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts b v CBO b v CEO b v Eb o NPN-Si, UHF/VHF Amp, Osc, Vlix, IF Amp


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    ECG107 ro-92 ECG108 ECG121 ECG121MP* ECG123 ECG123A ECG159 ECG159MCP ECG123AP transistor ECG128 ECG128 ECG152 ECG127 transistor ECG123 transistor ECG123a PDF

    2ND55

    Abstract: 2N828 2n4933 *423 pnp 2N2482 2n711 2N3733 2N3866 2N401 MT72j
    Text: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - Of NPN type « Rated Breakdown VottaiM V V V CB CB EB VCE 65 6b :^N3e32] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866 f ?N3S24


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    2H3375 S2N35 2N3733 2N3866 JN3924 2N392B 2N401Ã T0-60 JN4040 2N4041 2ND55 2N828 2n4933 *423 pnp 2N2482 2n711 2N401 MT72j PDF

    power amplifier IC 4440

    Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
    Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min


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    TQ-60 T0-60 BSX33 2N956 power amplifier IC 4440 BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38 PDF

    3733

    Abstract: c3228 transistor power
    Text: WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS TYPE {N3866 ?N 5090 ?N5635 2N 3375 THM404 2N 4440 3N5636 •OHM 408 SO 1475 2N 3733 2N 5016 THM416 2N 5637 T H M 4Î5 TDSOIOWO SD 1462 SD 1 4& * SD 1470 SD 9130 TCC0105-100 ICC 0204-125 PACKAG E


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: S GS-TH O M SO N ?1C D î'ü S T E B ? ; ODGMfitiO - 0 | rT " 3 3 - 6 f THOMSON SEMICONDUCTORS wideband VHF - UHF class C for ECM and radio links applications V cc PACKAGE TYPE ^out Frequency m in range M H z CONFIG. (V ) • (W) 2N 3866 2N 5090 2N 5635


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    T0-60 tCB-400) PDF

    TO1C

    Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
    Text: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65


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    2K337S 2K3632 2N3733 T0-60 TQ-60 2N3866 N3924 2N392B -2N3927 2N401Ã TO1C 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 PDF

    multi-emitter transistor

    Abstract: 2N5090 Thomson-CSF amplifier N5090
    Text: GSC D S G S -TH O M SO N ÎTETEB? DOGGlTt. b | ' p ' 3 3 -OS'. SOLID STATE MICROWAVE THOMSON-CSF COMPONENTS CORPORATION 2 N5090 . Montgomeryville,.PA 18936" 215 362-8500•TWX 510-661-7299 1.2 W, 28 V, VHF-UHF POWER TRAN SISTO R DESCRIPTION: •The 2N5090 is a silicon epitaxial NPN planar transistor that employs


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    N5090 2N5090 400mHz 100mHz 400mHz, multi-emitter transistor Thomson-CSF amplifier N5090 PDF

    Untitled

    Abstract: No abstract text available
    Text: J UJ nitron sem iconductors Semitronics Corp. S 2 m www.DataSheet.in silicon transistors UHF/VHF power transistors 7~~3 7 ~ 0 / NPN type « Rttad Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28


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    2N3733 2N3866 N3S24 2N3926 2N3927 T0-60 MT-72j PDF

    2N510B

    Abstract: 1HW NPN 2NS71 2N3927 2NB642
    Text: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - O f NPN type « Rated Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866


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    1311IETUI1 2N3733 2N3866 N3S24 2N3926 2N3927 2N962 2N985 2N2190 2N510B 1HW NPN 2NS71 2N3927 2NB642 PDF

    j 6910

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTO]- Sb DE?! ^OTVHSO OGOfilbb S J “ S-AU5L S-AU5M S-AU5H TOSHIBA RF POWER AM PLIFIER MODULE 9097250 T O S H IB A 5bC C D IS C R E T E / O P T O Ö ^ T -7 4 ~ 0 9 -0 1 0 8 L66 UHF POWER AMPLIFIER MODULE Unit in mm 6&0 6 0 ,0 features ì


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    -500M V9IHS01 QS2Z606 V8IHS01 j 6910 PDF

    BFR38

    Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
    Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022


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    XO-72 O-117SL O-117SL 2N6080 BSX33 2N956 BFR38 BFR99 BFX89 9552N TO-117SL pnp 2222a PDF

    ecg68

    Abstract: uhf microwave fet ECG81 50 Amp 100 volt fet Amp. 100 watt fet Si-Power ECG58 ECG59 ECG60 ECG60MP
    Text: Transistors cont'd ECG Type (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application Collector To Emitter Volts BVce O Base to Emitter Volts b v Ebo Max. Collector Current Iç Amps Freq. In MHz »t


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    ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 ECG60MP* ecg68 uhf microwave fet ECG81 50 Amp 100 volt fet Amp. 100 watt fet Si-Power ECG60MP PDF

    ECG58

    Abstract: ecg59 ecg84 uhf microwave fet ECG79 ECG388 ECG60 ECG60MP ECG61 ECG61MP
    Text: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Description and Application bv Collector To Emitter Volts Base to Emitter Volts BVc e o BVEBo Cbo Max. Collector Current 1C A m p s Max. Device Diss. P q


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    ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 ECG60MP* ecg84 uhf microwave fet ECG79 ECG388 ECG60MP ECG61 ECG61MP PDF