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    ULTRA POWER AA 24P Search Results

    ULTRA POWER AA 24P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA POWER AA 24P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    208 pin rqfp drawing

    Abstract: 240 pin rqfp drawing BGA 144 MS-034 AAL-1 bga package weight 192 BGA PACKAGE thermal resistance
    Text: Altera Device Package Information April 2002, ver. 10.2 Introduction Data Sheet This data sheet provides the following package information for all Altera devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.


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    240 pin rqfp drawing

    Abstract: BGA sumitomo 724p EP1C12 Altera pdip top mark epm7032 plcc FBGA672 192 BGA PACKAGE thermal resistance
    Text: Altera Device Package Information February 2003, vers. 11.0 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 9)


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    PDF 7000B, 7000AE, 240 pin rqfp drawing BGA sumitomo 724p EP1C12 Altera pdip top mark epm7032 plcc FBGA672 192 BGA PACKAGE thermal resistance

    ep600i

    Abstract: JEDEC MS-034-AAJ-1 BGA Package 172 EP1800 MS-034 AAF-1 192PGA pdip 24 altera AP672 EP610 epm9560 die
    Text: Altera Device Package Information May 2001, ver. 9.1 Introduction Data Sheet This data sheet provides the following package information for all Altera® devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.


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    EP20K100E

    Abstract: EP20K160E EP20K200 EP20K200E EP20K300E EP20K60E EP20K100 0245 TQFP-208 208RQFP 280-PGA
    Text: Altera Device Package Information August 2000, ver. 8.03 Data Sheet 2 Introduction This data sheet provides the following package information for all Altera® devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.


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    PDF 49-pin 169-pin EP20K100E EP20K160E EP20K200 EP20K200E EP20K300E EP20K60E EP20K100 0245 TQFP-208 208RQFP 280-PGA

    Untitled

    Abstract: No abstract text available
    Text: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)


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    PDF FT6187/FT6187L P4C187 FT6187L FT6187L 22-Pin 24-Pin 290x490 28-Pin

    FT6187

    Abstract: No abstract text available
    Text: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)


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    PDF FT6187/FT6187L FT6187L P4C187 22-Pin SRAM111 FT6187 FT6187L Jan-08

    24-Pin Plastic DIP

    Abstract: P4C147 P4C150
    Text: P4C150 P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Single 5V ± 10% Power Supply Full CMOS, 6T Cell Separate Input and Output Ports High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military)


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    PDF P4C150 24-Pin 28-Pin P4C150 096-bit 15DMB 15LMB 24-Pin Plastic DIP P4C147

    DIODE SMD A6

    Abstract: 24-Pin Plastic DIP 5962-84036 P4C116
    Text: P4C116 P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Output Enable Control Function High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Single 5V±10% Power Supply Common Data I/O


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    PDF P4C116 24-Pin 28-Pin P4C116 384-bit no883, DIODE SMD A6 24-Pin Plastic DIP 5962-84036

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR G3E D J TObSST? OOOOBM? fl P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS r r-V é -3 3 - /O ' FEBRUARY 1988 - FEATURES • Full CMOS, 6T Cell Single Power Supply — 5V ±10%


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    PDF P4C188/P4C188L P4C188L -22-P -24-Pin -22-Pin -17PC -20PC -20CC -20LC -25PC

    P4C188

    Abstract: P4C188L
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)


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    PDF P4C188/P4C188L P4C188 P4C188L 22-Pin 24-Pin 22-Ptn P4C188 P4C188L 53625CC -35PC

    Untitled

    Abstract: No abstract text available
    Text: Q u ic k S w itc h P ro d u c ts High-Speed, Low Power % .1« . q s 3L384 qs 3L2384 C » O S '» ’ I» ' ßus Switches FEATURES/BENEFITS DESCRIPTION • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs


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    PDF 3L384 3L2384 QS3L384 QS3L2384 10-bit MDSL-00036-04

    Untitled

    Abstract: No abstract text available
    Text: P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Separate Inputs and Outputs - P4C1681 Input Data at Outputs during Write - P4C1682 Outputs in High Z during Write Full CMOS, 6T Cell High Speed Equal Access and Cycle Times -12/15/20/25 ns (Commercial)


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    PDF P4C1681, P4C1682 P4C1681 P4C1682 20/25/35ns 24-Pin 24-Pln

    Untitled

    Abstract: No abstract text available
    Text: m QuickSwitch Products High-Speed CMOS Ouality Semiconductor, I nc . r, 1° -B" LoW , qs3lr 384 advance INFORMATION P o W e r> L o W Resistance Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5 Q. bidirectional switches connect inputs


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    PDF 24-pin QS3LR384 MDSL-00308-01

    HT12H

    Abstract: HT-12H
    Text: QuickSwitch Products GB Sem iconductor , I n c . q s 3389 Last Value Latch 2 0 A c ,'V e P US T e r m in a to rs ßus Hold FEATURES/BENEFITS DESCRIPTION • Active termination pulls bus pins to rails • Holds last value of input signal • Ideal replacement for resistive termination


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    PDF 24-pin QS3389 pr012 HT12H HT-12H

    P4C1258

    Abstract: O513
    Text: PERFORMANCE SEMICONDUCTOR 7Ob2517 OOOOfc.41 fl • SOE D P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS jA FEATURES ■ High Speed (Equal A ccess and C ycle Tim es) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary) ■ Three-State Outputs


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    PDF P4C1258/P4C1258L P4C1258 P4C1258L P4C1258 P4C1258L 144-bit 64Kx4. TTL-compati1258/L -25PC -30PC O513

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times


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    PDF P4C150 24-Pin 28-Pin SMD-5962-88588 -15LM -20LM -25LM

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR SQE D • iütaST? aPÜQtll T T - f i-23 - P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS À FEATURES ■ Full CMOS, 6T Cell Data Retention, 10 nA Typical Current from 2.0V. ■ High Speed (Equal Access and Cycle Times)


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    PDF P4C198/P4C198L, P4C198A/P4C198AL P4C198 P4C198A P4C198/198A P4C198L/198AL -15PC -15JC -15CC -15LC

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICO NDU CTOR SOE D • 70^25^7 Q00QST5 5 P4G187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS T - % - X l - 0 5 :- FEATURES Full CM O S, 6T Cell ■ Data Retention w ith 2.0V Supply High Speed (Equal Access and Cycle Tim es)


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    PDF Q00QST5 P4G187/P4C187L P4C187 P4C187L -12PC -12JC -12CC -12LC -15PC -15JC

    Untitled

    Abstract: No abstract text available
    Text: P4C1682/P4C1682L, P4C1681 /P4C1681L ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES Data Retention with 2.0V Supply, 0.5|iA Typical Current • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -12/15/20/25/35 ns (Commercial) - 20/25/35/45 ns (Military)


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    PDF P4C1682/P4C1682L, P4C1681 /P4C1681L P4C1682/81 P4C1682L/81L P4C1681/L P4C1682/L P4C1681L P4C1682L -12PC

    P4C422

    Abstract: No abstract text available
    Text: PERFORMANCE SEUICONDUCTOR SOE D 70^53*17 G0G17bfl fiflT P4C422 ULTRA HIGH SPEED 256 x 4 CMOS STATIC RAM V ¿ ,-2 IPSC 3 . FEATURES • Fast Access Time —8,10,12,15, 25 ns Commercial —15, 20, 25 ns (Military) 5 V Power Supply ±10% for both commercial and


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    PDF P4C422 00G17bfl 24-pln T-46-23-08 P4C422 -10PC -12PC -15PC -25PC -10DC

    Untitled

    Abstract: No abstract text available
    Text: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell 5V ± 1 0 % Power Supply High Speed Equal Access and Cycle Times -1 0 /1 2 /1 5 /2 0 /2 5 ns (Commercial) -12/1 5 /2 0 /2 5 /3 5 ns (Industrial) -15 /2 0 /2 5 /3 5 /4 5 ns (Military)


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    PDF P4C198/P4C198L, P4C198A/P4C198AL P4C198L/198AL P4C198 P4C198A P4C198/198A -15LM -20LM -25LM -35LM

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)


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    PDF P4C188/P4C188L 22-Pin 24-Pin 22-Pln P4C188 P4C188L P4C188 -20CM -20LM

    TI33

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR EOE D • TObBST? D Q 0 0 ti33 1 P4C1257/P4C1257L ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS SCRAMS A -FEATURES High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial)


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    PDF P4C1257/P4C1257L P4C1257 P4C1257L 1502B P4C1257/L -20PC -20JC -20CC -20LC -25PC TI33

    1S21

    Abstract: P4C150
    Text: PERFORMANCE SEMICONDUCTOR 5 DE D • TDbESI? □ □ □ 1 Ô G 4 b^T « P S C P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES ■ Full CMOS, 6T Cell Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)


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    PDF P4C150 -713mW 24-Pln 096-bit Tbl14 MIL-STD-883D -10PC 1S21