APT4M120K
Abstract: MIC4452
Text: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT4M120K
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APT4M120K
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT4M120K
O-220
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Untitled
Abstract: No abstract text available
Text: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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Infineon technology roadmap for mosfet
Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial
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KMZ60
KMA210
KMA215
Infineon technology roadmap for mosfet
LFPAK88
Acbel schematic diagram switching power supply
BLDC TRW
schematic diagram inverter air conditioner
schematic diagram for split air conditioner
TRIAC 20A 600V
inverter schematic ims 1600
triac 4A, 600V, 5mA
triac 0,8A, 600V, 5mA
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500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,
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Power247TM,
500W TRANSISTOR AUDIO AMPLIFIER
IN5822 diode
irfs6408
220V ac to 9V dc converter circuit
DC 48v AC 220v 500w smps
P-Channel MOSFET 800v
SB550 transistor
drive motor 10A with transistor P channel MOSFET
P channel 600v 20a IGBT
list of n channel power mosfet
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
QW-R502-218
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MOSFET 800V 10A TO-3P
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
QW-R502-218
MOSFET 800V 10A TO-3P
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10N80
Abstract: MOSFET 800V 10A 10n8 mosfet 800v diode 218
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
QW-R502-218
MOSFET 800V 10A
10n8
mosfet 800v
diode 218
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MOSFET 800V 10A TO-3P
Abstract: 10n80 mosfet 337
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-TF1ues
QW-R502-218
MOSFET 800V 10A TO-3P
mosfet 337
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10n80
Abstract: MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 transistor 10N80L VDD400 mosfet 10a 800v
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L
10N80G
10N80-T3P-T
QW-R502-218
MOSFET 800V 10A
MOSFET 800V 10A TO-3P
10n80 transistor
10N80L
VDD400
mosfet 10a 800v
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mosfet 10a 800v
Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-t
QW-R502-218
mosfet 10a 800v
MOSFET 800V 10A TO-3P
MOSFET 800V 10A
10N80L
mosfet 10a 800v high power
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10n80
Abstract: MOSFET 800V 10A TO-3P MOSFET 800V 10A mosfet 10a 800v high power
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-TF1-Tt
QW-R502-218
MOSFET 800V 10A TO-3P
MOSFET 800V 10A
mosfet 10a 800v high power
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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10N80
10N80
10N80L-T3P-T
10N80G-T3P-T
10N80L-TC3-T
10N8at
QW-R502-218
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Untitled
Abstract: No abstract text available
Text: Double Pulse Switching Board Double Pulse Switching Board GA100SBJT12-FR4 VDS, MAX ID, MAX Features Compatible • 1200 V, 100 A Testing Low Series Inductance Design Wide, 6 oz. Copper Current Traces Multiple DUT and FWD Connections for Durability
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GA100SBJT12-FR4
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APT5F100K
Abstract: MIC4452 1000v5a
Text: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT5F100K
155nS
O-220
FREDFE42
APT5F100K
MIC4452
1000v5a
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Untitled
Abstract: No abstract text available
Text: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT5F100K
155nS
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: APT5F100K 1000V, 5A 2.9Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT5F100K
155nS
O-220
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byv26
Abstract: No abstract text available
Text: BYV26 Vishay Semiconductors Ultra / Super Fast Soft–Recovery Avalanche Rectifier Features D D D D D Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage 94 9539 Applications Switched mode power supplies
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BYV26
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
D-74025
11-Aug-00
byv26
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BYV26
Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E BYV26C diode
Text: BYV26 Vishay Telefunken Ultra / Super Fast Soft–Recovery Avalanche Rectifier Features D D D D D Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage 94 9539 Applications Switched mode power supplies
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BYV26
D-74025
11-Aug-00
BYV26
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26C diode
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Untitled
Abstract: No abstract text available
Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
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Untitled
Abstract: No abstract text available
Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
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420 Diode 2ba
Abstract: TJ3 diode bridge FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER SINGLE-PHASE ULTRA FAST BRIDGE RECTIFIER 550C SDA42AHF SDA42BHF SDA42CHF SDA42DHF SDA42EHF
Text: SOLID STATE DEVICES I NC 15 E D |fl3bb011 DDD5D17 T | SDA42HF 1 4.5 AMP RECTIFIER ASSEMBLY • • • • • • • • Average Output Current 14.5 Amps PIV 50 to 600 Volts Reverse Recovery Time*40ns Max Max Thermal Resistance Junction to Case 1.5 C/Watt
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OCR Scan
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aBbb011
DDD5D17
SDA42HF
00G50SS
420 Diode 2ba
TJ3 diode bridge
FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER
SINGLE-PHASE ULTRA FAST BRIDGE RECTIFIER
550C
SDA42AHF
SDA42BHF
SDA42CHF
SDA42DHF
SDA42EHF
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