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    UM 031 DIODE Search Results

    UM 031 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    UM 031 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BAT54WX

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAT54WX Features • • Extremely-Fast Switching Speed Low Forward Voltage Drop 200mWatt, 30Volt Schottky Diodes Maxim um Ratings Symbol


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    BAT54WX 200mWatt, 30Volt OD-523 100mA BAT54WX PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAT54WX Features • • Extremely-Fast Switching Speed Low Forward Voltage Drop 200mWatt, 30Volt Schottky Diodes


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    BAT54WX 200mWatt, 30Volt OD-523 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode


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    43GE571 CQX14, CQX15, CQX16, CQX17 92CS-42662 92CS-429S1 PDF

    ixys ml 075

    Abstract: 50N60A
    Text: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES


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    IXGX50N60AU1 IXGX50N60AU1S 50N60AU1 ixys ml 075 50N60A PDF

    D 819

    Abstract: No abstract text available
    Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V


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    12N100U1 12N100AU1 24SBSC T0-247 D 819 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode


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    LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F LED55B-LED55C-LED56 LED55C LED56 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZENER DIODES 1W Part# 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4168B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B 1N4402B 11'd4403 B 1N4404B 1N4405B 1N4406B 1N4407B 1N4408B 1N4409B


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    1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B PDF

    1N416B

    Abstract: 1N4162B 1N4158B 1N4159B 1N4160B 1N4161B 1N4163B 1N4164B 1N4165B 1N4166B
    Text: ZENER DIODES 1W Part# 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4168B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B 1N4402B 1N4403B 1N4404B 1N4405B 1N4406B 1N4407B 1N4408B 1N4409B 1N4410B


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    1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N416B PDF

    L4448

    Abstract: No abstract text available
    Text: Small Signal Diodes SOD80 Mini Melf m iniBag rder 0rder NOum ber N um ber \ K ?JJ T ype 10 pcs. 500 pcs. N Sw itching type, G eneral Purpose 500m W B A V 100 70-0100 500100 LL914 70-0914 500914 L L4148 704148 504148 LL4150 70-4150 50-4150 L L4448 704448


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    LL914 L4148 LL4150 L4448 LL101A LL103A 100mA L4448 PDF

    44258

    Abstract: 1N473SA 1W4751A 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B AT617 1N4166B
    Text: ZENER DIODES P irt# Nominal Zener Voltjga T n t Currant M u lm u a Oynamic Impetfanc* *n<ûl 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4166B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B


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    1N41S8B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1H4164B 1N4165B 1N4166B 1N4167B 44258 1N473SA 1W4751A AT617 PDF

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CMPNTS blE D • 4 4 4 7 5 6 4 ü ü ü T b l 2 ITS » H P A Hermetic Schottky Diodes for Mixers and Detectors 1-18 GHz Technical Data HSCH-6000 Series Features • Low P a ra s itic H erm etic P ackage -High Frequency Performance -M eets Performance


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    HSCH-6000 MIL-STD-750 HSCH-6312, PDF

    1N3842

    Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
    Text: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current


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    125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 1N3842 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303 PDF

    SMPN7316

    Abstract: DIODE Z0 031
    Text: met SURFACE M O U N T SOT23 SMPN SERIES PIN DIODES FOR RF SW ITC H IN G A N D ATTENUATING CORPOI FEATURES Surface Mount Package Tape anc! Reel A vailable Reliability G old M etallized Chip Silicon Nitride/Glass Passivation Low Series Resistance Low Capacitance


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    OT-23 SMPN7316 DIODE Z0 031 PDF

    3068

    Abstract: No abstract text available
    Text: SENSITRON MBRD640CT SEMICONDUCTOR Technical Data Data Sheet 3068, Rev. - MBRD640CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection • Battery charging Features: • • •


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    MBRD640CT MBRD640CT 3068 PDF

    smd diode JC 0p

    Abstract: DIODE SMD GEM IXGH24N60AU1S
    Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600


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    24N60AU1 IXGH24N60AU1S O-247 24N60AU1S) 24N60AU1S D94006DE, smd diode JC 0p DIODE SMD GEM IXGH24N60AU1S PDF

    BC 247 B

    Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
    Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25


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    IXGH32N60CD1 IXGH32N60CD1S O-247 32N60CD1S) BC 247 B IXGH32N60 DIODE SMD GEM PDF

    ST1009

    Abstract: st1020 IN6266 L14G1 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 1N6266
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATING FEATURES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A MILLIMETERS MAX. MIN. .255 NOTES MAX.


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    1N6266 1N6266 940nm ST1604 L14G1 L14G2 L14G1 L14G2 L14G1. IN6266 ST1009 st1020 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 PDF

    diode h2z

    Abstract: zener h2z gy 807 en 792-13
    Text: — Am79213/Am79C203/031 A M D J! Advanced Subscriber Line Interface Circuit ASLIC Device Advanced Subscriber Line Audio-Processing Circuit (ASLAC™) Device TABLE OF CONTENTS Linecard Block D ia g ra m .3


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    Am79213/Am79C203/031 diode h2z zener h2z gy 807 en 792-13 PDF

    ic 6264

    Abstract: 1N6264A 1N6264
    Text: Emitter Specifications _ 1N6264,1N6265 Infrared Emitter Gallium Arsenide Infrared Emitting Diode — * —-rth T h e 1N 6264 a n d 1N 6265 S e rie s a re g a lliu m a rs e n id e , lig h t e m ittin g d io d e s w h ic h e m it n o n - c o h e r e n t, in f r a r e d e n e rg y . T h e y a re id e a lly


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    1N6264 1N6265 I00N0M 1N6265 ic 6264 1N6264A PDF

    MM74HC08

    Abstract: 74HC 74LS HC08 M14A M14D MM74HC08M MM74HC08MTC MM74HC08SJ diagram LG TV circuits
    Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC08 Quad 2-Input AND Gate General Description All inputs are protected from dam age due to static dis­ charge by internal diode clam ps to V qq and ground. T he M M 74H C 08 AND gates utilize advanced silicon-gate


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    MM74HC08 MM74HC08 74HC 74LS HC08 M14A M14D MM74HC08M MM74HC08MTC MM74HC08SJ diagram LG TV circuits PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30


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    IXGH22N50BU1 22N50BU B2-13 22N50BU1 22NS0BU1S ----------------TVJ-125 PDF

    smd diode 819

    Abstract: 30n60
    Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO


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    IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) typ200 B2-58 smd diode 819 30n60 PDF

    ad 0845

    Abstract: 45c smd diode smd diode MS 22 SMD Diode KE
    Text: aixYS DSP25 VRRM IFRMS Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A FAVM r— V n sM V V RRM TO-247 SMD 1200 1600 Type DSP 25-12A DSP 25-16A ~l 4-4 -4 ! r V 1300 1700 TO -247 AD r - w H 1 DSP 25-12AS DSP 25-16AS 2 - i TO-247 SMD TO-247 AD I 3 TAB


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    DSP25 O-247 5-12A 5-16A 25-12AS 25-16AS ad 0845 45c smd diode smd diode MS 22 SMD Diode KE PDF

    32N60BU1

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C


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    32N60BU1 32N60BU1S O-247 B2-77 B2-78 PDF