Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK PRESENTS NEW MID-IR LASER DIODES 2.0 um and 2.3 um MID-IR laser diodes, 5.6 mm with monitor photodiode, room temperature operation ! RLTCM-2010D, 2.0 um, 10 mW cw, 5.6 mm with monitor photodiode, datasheet on request RLTCM-2025D, 2.0 um, 25 mW cw, 5.6 mm with monitor photodiode, datasheet
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RLTCM-2010D,
RLTCM-2025D,
RLTCM-2307D,
RLTCM-2310D,
RLTCM-2325D,
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smd marking 35
Abstract: 1SS378 smd diode UM smd diode marking um smd diode UM 85
Text: Diodes SMD Type HIGH SWITCHING DIODE 1SS378 Features Low forward voltage:VF 3 = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current
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1SS378
smd marking 35
1SS378
smd diode UM
smd diode marking um
smd diode UM 85
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type HIGH SPEED SWITCHING DIODE 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current
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1SS372
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TQTRX
Abstract: No abstract text available
Text: Production Released Process TQRLC TQTRx Advanced PassivesFoundry Foundry Service Service GaAs MESFET Passivation Via Metal 3 Metal 3 - 5 um Features • • Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • Metal 1 - 2 um Dielectric MIM Metal Metal 0 MIM Capacitor
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2M4735A
Abstract: ZM4728A ZM4729A ZM4730A ZM4731A ZM4732A ZM4733A ZM4734A ZM4736A ZM4737A
Text: ZENER DIODES, SURFACE MOUNT, MELF PACVKAGE 1 Watt <1ED£C P a rt Num ber Nom inal M axim um Zener Z en e r Zener Voltage Im pedance Test C urrent Z jt at l»r M axim um Knee Im pedance M axim um R everse C u rre n t a tT ,= 2 5 C M axim um M axim um S urge
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ZM4728A
ZM4729A
ZM4730A
ZM4731A
ZM4732A
ZM4733A
ZM4734A
2M4735A
ZM4736A
ZM4769
ZM4737A
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Rectifiers Type Num ber M axim um Average Rectified Current @ Half-Wave Resistive Load 60Hz M axim um Forward Peak Surge Current @ 8.3ms Superim posed PRV l0 @ Tc lFM Surge M axim um Reverse Current @ PRV M axim um Forward Voltage @ 2 5 ° Tc
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MBR730
MBR735
MBR740
MBR745
MBR750
MBR760
Schottky/T0-220A
SBL1645
SBL1650
SBL1660
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES, SURFACE MOUNT, MELF PACVKAGE 1 Watt JEDEC Pari N um ber N om inal M axim um M axim um Z ener Zener Z ener Knee Voitage Im pedance Im p e d a n c e T est C urrent a t iw m m m m at l „ u |m A V,< V ) UxMiA) {Ohms) fO hm s) W M axim um R e ve rse
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ZM4728A
ZM4729A
ZM4731A
ZM4760A
ZM4761A
ZM4762A
ZM4783A
ZM4764A
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HER603
Abstract: HER101 HER102 HER103 HER104 HER105 HER106 HER151 HER152 HER153
Text: High Efficiency Rectifiers Type Num ber M axim um Peak Reverse Voltage M axim um Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV lo @ T a * CL > A Av °C M axim um Forward Peak Su rge Current @ 8.3ms Superim posed M axim um Reverse Current @ PRV
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Efficiency/DO-41
HER101
HER102
HER103
HER104
HER105
HER106
Efficiency/DO-15
HER151
HER152
HER603
HER103
HER106
HER153
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Untitled
Abstract: No abstract text available
Text: Silicon Rectifiers M axim um Peak Reverse Voltage PRV *L £ > M axim um Average Rectified Current @ Half-Wave Resistive Load 60Hz M axim um Forward Peak Surge Current @ $.3m s M axim um Reverse Superimposed fw è tk b @ Ta lFM Surge Ir If m V fm *. Û <
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Ampere/DO-15
1N5391
tN6392
1NS393
Ampere/D0-201AD
1N5400
1N5401
1N5402
1N5404
1N5406
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C1995
Abstract: No abstract text available
Text: Zener Diodes 1.3 W att Zener Diodes/DO-41 Type N um ber - Zener Voltage Range* Test Current M axim um Zener Impedance Typical Tem perature Coefficient Reverse Voltage @ Ir = 0.5pA At Izj M axim um Zener Current Vz @ lz r 'Z T Volts mA Ohm s %/°C ZPY1 ZPY3.9
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Diodes/DO-41
C1995
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Untitled
Abstract: No abstract text available
Text: SPECIAL DEVICES VARACTOR DIODES FOR RADIO TUNING M axim um Forw ard C urre nt m A Reverse B reakdow n Voltage (Volts) M inim um Figure of M erit P ow er D issipation (m W ) M inim um Diode C a pa cita nc e (pF) N TE Type Num ber D iagram Num ber A pplication
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sot23 a4p
Abstract: transistorS 812 JANTX2N2857 7104F MA4P275S ma4cp104A ODS-1091 MA4CP101B MA4E2503L MA4CS102B
Text: SMQ High Volume Standard PIN Switching Diodes Model Num ber Case S tyle M A4P1250 M A4P1450 1072 1091 V oltage Rating Volts lR = 10 h A 50 50 M axim um C apacitance (PF) 1 = 1 MHz VR = 50 V 1.2 2.5 M inim um C a rrier Lifetim e <^s) M axim um R e sistance
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A4P1250
A4P1450
MA4P4001
A4P4002F
A4P4006F
A4P4301F
A4P4302F
A4P4306F
7001F
A4P7002F
sot23 a4p
transistorS 812
JANTX2N2857
7104F
MA4P275S
ma4cp104A
ODS-1091
MA4CP101B
MA4E2503L
MA4CS102B
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Untitled
Abstract: No abstract text available
Text: SUPER FAST RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE -65 ”C to +150 °C M axim um Average Rectified Current @ Half-W ave Resistive Load 60Hz Maxim um Forward Peak Surge Current @ 8.3ms Maxim um Reverse Current @ PRV
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DO-201
DO-41
Q007L
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MP150S
Abstract: MP1501 MB1505 MB151 MB1510 MB152 MB154 MB156 MB2505 MB251
Text: Bridge Rectifiers T h e A T S IN K M axim um Forward Voltage Per Leg @ 25°C T a Ir A p K pAdc 'fm V FM CL lFM Surge lo @ M axim um Reverse Current @ PRV @ 25°C Ta > V pk M axim um Forward Peak Surge Current @ 8.3ms Superim posed Û. < PRV M axim um Average
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Ampere/MB-35
MB1505
MB151
MB152
MB154
MB156
MB1510
MB2505
MB251
MB252
MP150S
MP1501
MB1505
MB151
MB1510
MB152
MB2505
MB251
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Untitled
Abstract: No abstract text available
Text: Bias D etector Diodes V 2.00 i B • fe ' i ZBD Beam Lead Diodes Style 965A Teat Frequency Band Model N um ber Ä v3.4,5 M inim u m ^ M inim um 2 E o .m V -d B m ) (k Ohm s) (M inim um ) (Maximum) WAtfHfiB X 46 2 05 1.0 MA4C186B X 50 8 2.0 5.0 MAW lâGC
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MA4C186B
MA4E029A
MA4E923D
MA4E929C
L-10K
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1N225
Abstract: 1N226 LL4689 1N229 1N229A 1N227 1N227A Zener Diode 4711 1N225A 1N228
Text: DOUBLE ENDED ZENER DIODES, C1 CAN Nom inal M axim um Zener iiSsÄsB-jSiiS: Zener Voltage Voltage Test at l „ C urrent i l i l i l I p ls s ill M inim um Z ener Voltage at N um ber V, IV 1N225 1N226 1N227 1N228 7.50 8.75 7.50 6.8 9.00 10.50 9.00 8.2 12.5
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400mW
1N225
1N226
1N227
1N228
1N229
1N225A
1N226A
1N227A
1N228A
LL4689
1N229
1N229A
Zener Diode 4711
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E-101
Abstract: E-102 E-152 E-202 E-272 E-301 E-352 E-452 E-562 E-701
Text: CURRENT REGULATOR DIODES Package N um ber liÉ llïiiilli Pinch Off C urrent at 25 VDC I, m A Minim um Nom inal M axim um Limiting Voltage at 0 811, V (Volts) D yn am ic Im pedance at V * 2 5 V Z- (O h m s) fmpectance at V, = 6 V Z, (O h m s) P eak Operating
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E-101
E-301
E-701
E-102
E-152
E-202
E-272
E-352
E-452
E-562
E-101
E-102
E-152
E-202
E-272
E-301
E-352
E-452
E-562
E-701
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Untitled
Abstract: No abstract text available
Text: RECTIFIER DIODES, Leadless Surface Mount, Ultra Fast Recovery IS l P a rt Num ber M axim um A v e ra g e Rectified C urrent at T, P eak Forward: M axim um M axim um S urge C urrent Fwd Voltage Rev C urrent R e c o v e ry Peak R * t * d t0 @ Rated PIV Tim e at
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1N6478
1N6479
1N6482
1N6483
1N6484
GL41A
GL41B
GL410
GL41G
GL41J
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MIL-HDBK-217A
Abstract: No abstract text available
Text: 1 .M A X IM U M RATINGS 1.1 D ifinition of M axim um R atings. The m axim um perm issible value o f c u rre n t to be supplied to , voltage appled to o r reverse pow er dissipation e tc ., of; diodes, rectifiers, th y risto rs, triacs, etc., is d efined as th e m axim um
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MIL-HDBK217A
MIL-HDBK-217A
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1N53438
Abstract: 1n53668
Text: ZENER DIODES, 5 WATTS, PLASTIC PACKAGE Zener JEDEC p A rt Voltage * t * r Zener Test S u ffix AS S M axim um b e tte r Im ped* nee fit tj. tmA Suffix A.8.C M axim um Reverse Current at T ^ Z B ^ C M axim um Knee '.•••.'.'.'.wlr ft • Im pedance fit t »1 OmA Ron & A
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1N5333B
1H5334B
1N5335B
1N5336B
1NS337B
1N53438
1n53668
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sharp hologram laser diode
Abstract: LG OPTICAL PICK-UP
Text: Teams and Symbols Laser diode 1 Terms and symbols P aram eter Symbol A bsolute M axim um Ratings - Definition T h e absolute m axim um ratings m ust n ot b e ex ceed ed even m om entarily re g a rd le ss of the external condition. T h e absolute m axim um ratings are specified for a case tem perature of
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Tc-25;
sharp hologram laser diode
LG OPTICAL PICK-UP
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1N9648
Abstract: in755 1N9626 1N75A 1N957B 1N958B 1N961B 1N963B 1N965B 1N966B
Text: ZENER DIODES, GENERAL PURPOSE 400m W N um ber Maxim um Zener N om inal Im pedance Zener í í &íbM jb! V oltage Test 1 at 1 C urrent 2 , @ 1, 2 « @ U V, V olts !. {mA) (Ohm s) tü hm S ) (m A li M axim um R e v e rs e Le-aKage C u rre n t Wax DC M ax
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1N957B
1N958B
1N96Q8
1N961B
1N9626
1N963B
1N9648
1N965B
DO-35
DO-35.
in755
1N75A
1N966B
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES, GLASS PACKAGE, LOW CURRENT 250m W JEOEC P a rt N um ber 1N 4678 N om inal Voltage at l1T Zen a* T e st C u rra n t M axim um Voltage R egulation V V olts lr* t« A ) A V , (V olts) M axim um R e v e rs e wmMmm 26°C V , (V o lts) •« (u A )
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Untitled
Abstract: No abstract text available
Text: Anode Gate Silicon Controlled Rectifier eries Dim In c h e s M in im um Anode A B C D E F G H J K M N P R S Note 1: 1 / 4 - 2 8 UNF-3A Note 2: Full thread within 2 1 /2 threads M illim e te r M a xim um M inim um M axim um N o te s 1 .677 - 1.200 .427 .115
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O-208AC
00V/usec.
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