upB581 nec
Abstract: UPB581C BF08 UPB581 UPB581B
Text: UPB581B UPB581C DIVIDE- BY- 2 PRESCALER FEATURES TEST CIRCUIT • HIGH FREQUENCY OPERATION TO 2.8 GHz UPB581B,C • WIDE BAND OPERATION VCC • SINGLE SUPPLY VOLTAGE: VCC = 5 V ±10% • COMPLEMENTARY OUTPUTS IN 1 8 2 7 3 6 4 5 * OUT DESCRIPTION The UPB581 series of devices are divide-by-2 silicon bipolar
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UPB581B
UPB581C
UPB581B
UPB581
UPB581B)
UPB581C)
UPB581C.
24-Hour
upB581 nec
UPB581C
BF08
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Prescalers
Abstract: UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014
Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an
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AN1014
UPB585B
24-Hour
Prescalers
UPB582C
uPG506
UPG503
UPG506P
UPG502
uPB584
UPB584G
UPB585G
AN1014
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Prescalers
Abstract: UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584
Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an
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AN1014
UPB585B
Prescalers
UPB585
uPG506
UPB584G
UPB581
UPB582C
UPG506B
AN1014
UPB582
UPB584
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: UPB581B UPB581C DIVIDE- BY- 2 PRESCALER FEATURES_ • HIGH FREQUENCY OPERATION TO 2.8 GHz • WIDE BAND OPERATION • SINGLE SUPPLY VOLTAGE: Vcc - 5 V ±10% • COMPLEMENTARY OUTPUTS TEST CIRCUIT UPB581B.C DESCRIPTION_
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UPB581B
UPB581C
UPB581
UPB581B)
UPB581C)
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Untitled
Abstract: No abstract text available
Text: SEC UPB581A UPB581B UPB581C UPB581P DIVIDE-BY-2 PRESCALER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE A08 • H IG H FREQ UENC Y O PER ATIO N - 9.40<J> MAX “ • W ID E BAND O PERATIO N I*- 8.50(J) MAX — • SIN G LE S U PPLY VO LTAG E : Vcc = 5 V ±1 0%
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UPB581A
UPB581B
UPB581C
UPB581P
UPB581
UPB581P)
UPB581A)
UPB581B)
UPB581A,
UPB581B,
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upb581
Abstract: No abstract text available
Text: DIVIDE- BY- 2 PRESCALER ^ B581 ? UPB581C TEST CIRCUIT FEATURES HIGH FREQUENCY OPERATION TO 2.8 GHz UPB581B.C WIDE BAND OPERATION SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% COMPLEMENTARY OUTPUTS DESCRIPTION T h e U P B 581 s e rie s o f d e v ic e s are d iv id e -b y -2 s ilico n b ip o la r
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UPB581C
UPB581B
UPB581C.
b427S25
upb581
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upb581
Abstract: No abstract text available
Text: UPB581A UPB581B UPB581C UPB581P DIVIDE- BY- 2 PRESCALER TEST CIRCUITS FEATURES UPB581A HIGH FREQUENCY OPERATION TO 2.8 GHz WIDE BAND OPERATION SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% COMPLEMENTARY OUTPUTS DESCRIPTION The UPB581 series of devices are divide-by-2 silicon bipolar
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UPB581A
UPB581B
UPB581C
UPB581P
UPB581A
UPB581
UPB581P)
UPB581A)
UPB581B)
UPB581C)
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Untitled
Abstract: No abstract text available
Text: m I 1 SEC UPB581A UPB581B UPB581C UPB581P DIVIDE-BY-2 PRESCALER OUTLINE DIMENSIONS FEATURES Units in mm O UTLIN E A08 • HIGH FREQUENCY OPERATION • • WIDE BAND OPERATION 9.404* MAX “ I*- 8.50<}> MAX — • SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% • TWO SEPARATE IDENTICAL OUTPUTS
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UPB581A
UPB581B
UPB581C
UPB581P
UPB581
UPB581P)
UPB581A)
UPB581B)
UPB581C)
divis10
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UPB581C
Abstract: AN-1001 BF08 UPB581 UPB581A UPB581B UPB581P upB581 nec
Text: NEC UPB581A UPB581B UPB581C UPB581P DIVIDE-BY-2 P R E S C A L E R OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE A08 • HIG H FREQ UENC Y O PERATIO N • 9.404> MAX • W IDE BAND O PERATIO N — 8.50 (J) MAX — • SIN G LE SU PPLY VO LTAG E: Vcc = 5 V +10%
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UPB581A
UPB581B
UPB581C
UPB581P
UPB581
UPB581P)
UPB581A)
UPB581B)
UPB581C)
UPB581A,
AN-1001
BF08
UPB581P
upB581 nec
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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transistor t06
Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX
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mmic a08
Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18
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