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    UPD42644 Search Results

    UPD42644 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    uPD42644 NEC Semiconductor Selection Guide 1995 Original PDF
    uPD4264400 NEC Semiconductor Selection Guide 1995 Original PDF
    uPD4264400G5-A50-7JD NEC DRAM Chip, FPM DRAM, 8MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin Original PDF
    uPD4264400G5-A60-7JD NEC DRAM Chip, FPM DRAM, 8MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin Original PDF
    uPD4264400LE-A50 NEC 64 M-BIT DYNAMIC RAM 16 M-Word BY 4-BIT, FAST PAGE MODE Original PDF
    uPD4264400LE-A60 NEC 64 M-BIT DYNAMIC RAM 16 M-Word BY 4-BIT, FAST PAGE MODE Original PDF
    uPD4264405G5-A50-7JD NEC 64 M-BIT DYNAMIC RAM 16 M-Word BY 4-BIT, EDO Original PDF
    uPD4264405G5-A60-7JD NEC DRAM Chip, EDO DRAM, 8MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin Original PDF
    uPD4264405LE-A50 NEC 64 M-BIT DYNAMIC RAM 16 M-Word BY 4-BIT, EDO Original PDF
    uPD4264405LE-A60 NEC 64 M-BIT DYNAMIC RAM 16 M-Word BY 4-BIT, EDO Original PDF
    uPD42644-L NEC Semiconductor Selection Guide 1995 Original PDF

    UPD42644 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UPD4264405

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT uPD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The >iPD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.


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    uPD4264405 uPD4265405 iPD4264405 /iPD4264405, 32-pin fiPD4264405-A50, 4265405-A50 HPD4264405-A60, 4265405-A60 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM :


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    MC-4216LFH641 16M-WORD 64-BIT MC-4216LFH641 uPD4264405 PDF

    u729

    Abstract: D42644
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT JU PD 426 4 40 0 , 4 2 6 5 4 0 0 64M -BIT DYNAMIC RAM 16 M-WORD BY 4-BIT FAST PAGE MODE D es c rip tio n The /iPD426440Q, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.


    OCR Scan
    uPD4264400 uPD4265400 32-pin 426440Q Q40-C MPD4264400, D4264400, /1PD4264400GS-7JD, 4265400G5-7JD: u729 D42644 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿¿PD4264405, 4 2 S 6 5 4 0 5 ,4265405 are 16,777,216 words by 4 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


    OCR Scan
    uPD4264405 uPD42S65405 uPD4265405 PD4264405, PD42S65405 32-pin PD4264405-A50 PD42S65405-A50, 4265405-A50 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFF721 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFF721 is a 16,777,216 words by 72 bits dynam ic RAM module on which 18 pieces of 64M DRAM :


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    MC-4216LFF721 16M-WORD 72-BIT MC-4216LFF721 uPD4264405 M168S-50A39-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /xPD4264400, 4265400 64 M BIT DYNAMIC RAM 16M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n The /iPD4264400, 4265400 are 16,777,216 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


    OCR Scan
    /xPD4264400, 16M-WORD /iPD4264400, 32-pin 264400-A 265400-A /1PD4265400265400 P32LE-400A PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿¡PD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


    OCR Scan
    PD4264405, 42S65405, PD42S65405 32-pin PDF

    D4264400

    Abstract: D42644
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / _ jiP D 4 2 6 4 4 0 0 , 4 2 6 5 4 0 0 6 4 M -B IT D YN AM IC RAM 16 M-W ORD B Y 4-BIT, F A S T P A G E M OD E D e s c r ip tio n The / i PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability


    OCR Scan
    uPD4264400 uPD4265400 32-pin iPD4264400-A50 265400-A MPD4264400. MPD4264400G5-7JD, 4265400G5-7JD: D4264400 D42644 PDF

    NEC uPD

    Abstract: 4264405 D42S65405
    Text: DATA SHEET NEC / _/ MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿/PD4264405, 42S65405, 4265405 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs w ith optional EDO. EDO is a kind of the page m ode and is useful fo r the read operation.


    OCR Scan
    uPD4264405 uPD42S65405 uPD4265405 /PD4264405, 42S65405, 42S65405 32-pin JPD4264405-A50 PD42S65405-A50, NEC uPD 4264405 D42S65405 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY DATA SHEET M OS INTEG RATED CIRCUIT NEC uPD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /JPD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.


    OCR Scan
    uPD4264405 uPD4265405 /JPD4264405 1PD4264405, 32-pin PD4264405-A50, 4265405-A50 PD4264405-A60, 4265405-A60 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PP4264400, 4 2 6 5 4 0 0 64 M BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿PD4264400, 4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.


    OCR Scan
    PP4264400, uPD4264400 uPD4265400 32-pin /JPD4264400-A50 PD4265400-A50 /JPD4264400-A60 PD4265400-A60 PD4264400-A70 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /¿ P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s b y 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility


    OCR Scan
    uPD4264400 uPD4265400 jjPD4264400-A50 MPD4264400, P32LE-400A 040-o 16tooo5 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD4264400,4265400 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs. The fast page mode capability realize high speed access and low pow er consum ption.


    OCR Scan
    uPD4264400 uPD4265400 PD4264400 32-pin PD4264400-A50 uPD4265400-A50 uPD4264400-A60 uPD4265400-A60 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynam ic RAM module on which 18 pieces of 64M DRAM :


    OCR Scan
    MC-4216LFF72 16M-WORD 72-BIT MC-4216LFF72 uPD4264405 M168S-50A15-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /x P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s by 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility


    OCR Scan
    PD4264400, 040-o b427S2S GIIHI42 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿PD4264400, 4265400 are 16,777,216 w ords by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


    OCR Scan
    uPD4264400 uPD4265400 PD4264400, 32-pin 264400-A 265400-A PD4265400-A PD4264400-A80 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC / M O S INTEGRATED CIRCUIT / /¿P P 4 2 6 44 0 0 , 4 2 6 5 4 0 0 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D escrip tio n The iiPD4264400, 4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAM s. The fast page mode


    OCR Scan
    iiPD4264400, 32-pin pPD4264400-A50 P32LE-400A 016to b4275Z5 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PP4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BtT, FAST PAGE MODE Description The /¿PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption


    OCR Scan
    PP4264400, uPD4264400 uPD4265400 32-pin PPD4264400-A50 PD426540G-A5G PD4264400-A60 /PD4265400-A60 040tocS PDF

    V/PD4264405

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The iiP D 4264405.4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.


    OCR Scan
    uPD4264405 uPD4265405 32-pin jjPD42644Q5-A50 20t8o8 XiPD4264405, /1PD4264405G5-7JD, 4265405G5-7J0: V/PD4264405 PDF