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    Rochester Electronics LLC UPD44324365BF5-E40-FQ1

    IC SRAM 36MBIT PAR 165FBGA
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    Rochester Electronics LLC UPD44324362BF5-E40-FQ1

    IC SRAM 36MBIT PAR 165FBGA
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    Rochester Electronics LLC UPD44324182BF5-E40-FQ1

    DDR SRAM, 2MX18, 0.45NS
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    Rochester Electronics LLC UPD44325362BF5-E40-FQ1

    IC SRAM 36MBIT PAR 165FBGA
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    Rochester Electronics LLC UPD44325362BF5-E33-FQ1

    QDR SRAM, 1MX36, 0.45NS
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    UPD443 Datasheets (116)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPD44321181 NEC 32M-bit(2M-word x 18-bit) ZEROSB SRAM Original PDF
    UPD44321181GF-A75 NEC 32M-bit(2M-word x 18-bit) ZEROSB SRAM Original PDF
    uPD44321181GF-A75 NEC 32 MBit ZEROSB SRAM Flow Through Operation Original PDF
    uPD44321181GF-A75Y NEC 32 MBit ZEROSB SRAM Flow Through Operation Original PDF
    UPD44321181GF-A75Y NEC 32M-bit(2M-word x 18-bit) ZEROSB SRAM Original PDF
    uPD44321181GF-A85 NEC 32 MBit ZEROSB SRAM Flow Through Operation Original PDF
    UPD44321181GF-A85 NEC 32M-bit(2M-word x 18-bit) ZEROSB SRAM Original PDF
    UPD44321181GF-A85Y NEC 32M-bit(2M-word x 18-bit) ZEROSB SRAM Original PDF
    UPD44321182 NEC 32M-bit(2M-word x 16-bit) ZEROSB SRAM Original PDF
    uPD44321182GF-A50 NEC 32 MBit ZEROSB SRAM Pipelined Operation Original PDF
    UPD44321182GF-A50 NEC 32M-bit(2M-word x 16-bit) ZEROSB SRAM Original PDF
    uPD44321182GF-A50Y NEC 32 MBit ZEROSB SRAM Pipelined Operation Original PDF
    UPD44321182GF-A50Y NEC 32M-bit(2M-word x 16-bit) ZEROSB SRAM Original PDF
    UPD44321182GF-A60 NEC 32M-bit(2M-word x 16-bit) ZEROSB SRAM Original PDF
    uPD44321182GF-A60 NEC 32 MBit ZEROSB SRAM Pipelined Operation Original PDF
    uPD44321182GF-A60Y NEC 32 MBit ZEROSB SRAM Pipelined Operation Original PDF
    UPD44321182GF-A60Y NEC 32M-bit(2M-word x 16-bit) ZEROSB SRAM Original PDF
    UPD44321361 NEC 32M-bit(1M-word x 36-bit) ZEROSB SRAM Original PDF
    UPD44321361GF-A75 NEC 32M-bit(2M-word x 18-bit) ZEROSB SRAM Original PDF
    uPD44321361GF-A75Y NEC 32 MBit ZEROSB SRAM Flow Through Operation Original PDF

    UPD443 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    transistor marking A19

    Abstract: A6 marking
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD44321181 is a 2,097,152-word by 18-bit and the μPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


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    PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit transistor marking A19 A6 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44324085, 44324095, 44324185, 44324365 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324085 is a 4,194,304-word by 8-bit, the μPD44324095 is a 4,194,304-word by 9-bit, the μPD44324185 is a


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    PD44324085, 36M-BIT PD44324085 304-word PD44324095 PD44324185 152-word 18-bit PD44324365 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44325084, 44325094, 44325184, 44325364 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description The μPD44325084 is a 4,194,304-word by 8-bit, the μPD44325094 is a 4,194,304-word by 9-bit, the μPD44325184 is a 2,097,152-word by 18-bit and the μPD44325364 is a 1,048,576-word by 36-bit synchronous quad data rate static RAM


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    PD44325084, 36M-BIT PD44325084 304-word PD44325094 PD44325184 152-word 18-bit PD44325364 PDF

    PD44325362F5-E50-EQ2-A

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PD44325082-A, 4325092-A, 4325182-A, 4325362-A PD44325082-A PD44325092-A PD44325182-A PD44325362-A1 BGA13 M19874JJ1V0DS PD44325362F5-E50-EQ2-A PDF

    PD44325092B

    Abstract: PD44325362BF5-E35-FQ1-A jtag timing
    Text: Datasheet PD44325092B-A μPD44325182B-A μPD44325362B-A 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0038EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44325092B-A is a 4,194,304-word by 9-bit, the μPD44325182B-A is a 2,097,152-word by 18-bit and the


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    PD44325092B-A PD44325182B-A PD44325362B-A 36M-BIT R10DS0038EJ0100 PD44325092B-A 304-word PD44325182B-A 152-word 18-bit PD44325092B PD44325362BF5-E35-FQ1-A jtag timing PDF

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44325092B μPD44325182B μPD44325362B 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0038EJ0200 Rev.2.00 August 11, 2011 Description The μPD44325092B is a 4,194,304-word by 9-bit, the μPD44325182B is a 2,097,152-word by 18-bit and the μPD44325362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with


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    PD44325092B PD44325182B PD44325362B 36M-BIT 304-word 152-word 18-bit PD44325362B PDF

    ieee 1149

    Abstract: No abstract text available
    Text: Datasheet PD44325084B-A μPD44325094B-A μPD44325184B-A μPD44325364B-A 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0039EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44325084B-A is a 4,194,304-word by 8-bit, the μPD44325094B-A is a 4,194,304-word by 9-bit, the


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    PD44325084B-A PD44325094B-A PD44325184B-A PD44325364B-A 36M-BIT R10DS0039EJ0100 PD44325084B-A 304-word PD44325094B-A ieee 1149 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44325084B-A, 44325094B-A, 44325184B-A, 44325364B-A 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description The μPD44325084B-A is a 4,194,304-word by 8-bit, the μPD44325094B-A is a 4,194,304-word by 9-bit, the


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    PD44325084B-A, 44325094B-A, 44325184B-A, 44325364B-A 36M-BIT PD44325084B-A 304-word PD44325094B-A PD44325184B-A PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44324085-A, 44324095-A, 44324185-A, 44324365-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324085-A is a 4,194,304-word by 8-bit, the μPD44324095-A is a 4,194,304-word by 9-bit, the μPD44324185A is a 2,097,152-word by 18-bit and the μPD44324365-A is a 1,048,576-word by 36-bit synchronous double data rate


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    PD44324085-A, 4324095-A, 4324185-A, 4324365-A 36M-BIT PD44324085-A 304-word PD44324095-A PD44324185A PDF

    PD44321182GF-A

    Abstract: No abstract text available
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD44321182, 44321362 32M ビット ZEROSBTM SRAM パイプライン・オペレーション μPD44321182(2,097,152 ワードx18 ビット), μPD44321362(1,048,576 ワード×36 ビット)は,先進の CMOS


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    PD44321182, PD443211822 PD443213621 ns200 /BW4PD44321362/BW1, /BW2PD44321182 M16024JJ6V0DS00 M16024JJ6V0DS PD44321182GF-A PDF

    Untitled

    Abstract: No abstract text available
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD44324082-A, 44324092-A, 44324182-A, 44324362-A 36M ビット DDR II SRAM 2 ワード・バースト・オペレーション μPD44324082-A(4,194,304 ワード x 8 ビット),μPD44324092-A(4,194,304 ワード × 9 ビット),μPD44324182-A


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    PD44324082-A, 4324092-A, 4324182-A, 4324362-A PD44324082-A PD44324092-A PD44324182-A PD44324362-A1 ns270 ns250 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44324084, 44324094, 44324184, 44324364 36M-BIT DDR II SRAM 4-WORD BURST OPERATION Description The μPD44324084 is a 4,194,304-word by 8-bit, the μPD44324094 is a 4,194,304-word by 9-bit, the μPD44324184 is a 2,097,152-word by 18-bit and the μPD44324364 is a 1,048,576-word by 36-bit synchronous double data rate static RAM


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    PD44324084, 36M-BIT PD44324084 304-word PD44324094 PD44324184 152-word 18-bit PD44324364 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44324082, 44324092, 44324182, 44324362 36M-BIT DDR II SRAM 2-WORD BURST OPERATION Description The μPD44324082 is a 4,194,304-word by 8-bit, the μPD44324092 is a 4,194,304-word by 9-bit, the μPD44324182 is a 2,097,152-word by 18-bit and the μPD44324362 is a 1,048,576-word by 36-bit synchronous double data rate static RAM


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    PD44324082, 36M-BIT PD44324082 304-word PD44324092 PD44324182 152-word 18-bit PD44324362 PDF

    AM 5888

    Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
    Text: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is


    Original
    M16000EJEV0SG00 AM 5888 SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324092B-A, 44324182B-A, 44324362B-A 36M-BIT DDR II SRAM 2-WORD BURST OPERATION Description The μPD44324092B-A is a 4,194,304-word by 9-bit, the μPD44324182B-A is a 2,097,152-word by 18-bit and the μPD44324362B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced


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    PD44324092B-A, 44324182B-A, 44324362B-A 36M-BIT PD44324092B-A 304-word PD44324182B-A 152-word 18-bit PD44324362B-A PDF

    TAP 105 K 035

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PD44324085-A, 4324095-A, 4324185-A, 4324365-A PD44324085-A PD44324095-A PD44324185-A PD44324365-A1 BGA13 PD44324365F5-EQ2-A TAP 105 K 035 PDF

    BGA15

    Abstract: 72M-BIT samsung ddr quad data rate SRAM idt 150-NM
    Text: 2009.9 2009.9 Ᏹߦᦨవ┵ࡔࡕ࡝⵾ຠࠍ㐿⊒ߒߡ߈ߚᛛⴚജࠍᵴ߆ߒ ᤨઍߩ࠾࡯࠭ߦวߞߚᣂߒ޿ࡔࡕ࡝໡ຠࠍ㐿⊒ߒߡ߹޿ࠅ߹ߔ‫ޕ‬ NECࠛ࡟ࠢ࠻ࡠ࠾ࠢࠬߪ㧘ࡔࡕ࡝੐ᬺಽ㊁ߦ߅޿ߡᏱߦᦨవ┵ߩᛛⴚࠍᛩ౉ߒ㧘


    Original
    M16000JJHV0SG 150nm 144pin PD48288118 M16000JJHV0SG00 BGA15 72M-BIT samsung ddr quad data rate SRAM idt 150-NM PDF

    Untitled

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PD44324082-A, 4324092-A, 4324182-A, 4324362-A PD44324082-A PD44324092-A PD44324182-A PD44324362-A1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44325084B μPD44325094B μPD44325184B μPD44325364B 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0039EJ0200 Rev.2.00 September 12, 2011 Description The μPD44325084B is a 4,194,304-word by 8-bit, the μPD44325094B is a 4,194,304-word by 9-bit, the


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    PD44325084B PD44325094B PD44325184B PD44325364B 36M-BIT 304-word PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    M8E0904E PDF

    e50y

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PD44324084-A, 4324094-A, 4324184-A, 4324364-A PD44324084-A PD44324094-A PD44324184-A PD44324364-A1 e50y PDF