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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 11 Amps, 100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,


    Original
    UT12N10 UT12N10 UT12N10L-TN3-R UT12N10G-TN3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1  DESCRIPTION SOT-223 The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,


    Original
    UT12N10 OT-223 UT12N10 O-252 UT12N10G-AA3-T UT12N10L-TM3-T UT12N10G-TM3-T UT12N10at QW-R502-508 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1  DESCRIPTION SOT-223 The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,


    Original
    UT12N10 OT-223 UT12N10 O-252 UT12N10L-AA3-T UT12N10G-AA3-T UT12N10L-TM3-T UT12N10G-TM3-at QW-R502-508 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,


    Original
    UT12N10 UT12N10 UT12N10L-TN3-R UT12N10G-TN3-R QW-R502-508 PDF

    12N10L

    Abstract: 12N10L-TA3-T 12N10
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged


    Original
    12N10 UT12N10 12N10L-TA3-T 12N10G-TA3-T 12N10L-TN3-T 12N10G-TN3-T 12N10L-TN3-R 12N10G-TN3-R O-220 O-252 12N10L 12N10 PDF

    12n10

    Abstract: Mosfet 12N10L mosfet VDS 30V ID 6A TO 252
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Preliminary Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UT12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged


    Original
    12N10 UT12N10 O-252 12N10L-TN3-R 12N10G-TN3-R 12N10L-TN3-T 12N10G-TN3-T O-252 QW-R502-737 12n10 Mosfet 12N10L mosfet VDS 30V ID 6A TO 252 PDF

    Untitled

    Abstract: No abstract text available
    Text: UT12N10 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-251 The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover,


    Original
    UT12N10 O-251 UT12N10 O-252 UT12N10L-TM3-T UT12N1at QW-R502-508 PDF