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    Cree, Inc. CXB1830-0000-000N0UT235G

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    Cree, Inc. CXB2530-0000-000N0UT235Q

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    Cree, Inc. CXB1830-0000-000N0UT235H

    LED COB XLAMP WARM WHT SQU 3500K
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    DigiKey CXB1830-0000-000N0UT235H Tray 100
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    Cree, Inc. CXB2530-0000-000N0UT235G

    LED COB XLAMP WARM WHT SQU 3500K
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    Cree, Inc. CXB2530-0000-000N0UT235H

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    Newark CXB2530-0000-000N0UT235H Bulk 100
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    UT235 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UT235 Microsemi Standard Recovery, 1 Amp to 2 Amp Rectifiers Scan PDF
    UT235 Microsemi Rectifier Scan PDF
    UT235 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    UT235 Unitrode International Semiconductor Data Book 1981 Scan PDF
    UT2-357RF Riedon Resistor Wirewound 357 OHM 1% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-357RFTR Riedon Resistor Wirewound 357 OHM 1% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT2-357RJ Riedon Resistor Wirewound 357 OHM 5% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-357RJTR Riedon Resistor Wirewound 357 OHM 5% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT2-35R7F Riedon Resistor Wirewound 35.7 OHM 1% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-35R7FTR Riedon Resistor Wirewound 35.7 OHM 1% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF
    UT2-35R7J Riedon Resistor Wirewound 35.7 OHM 5% 1.5W 20PPM AXIAL Thru-Hole Bulk Original PDF
    UT2-35R7JTR Riedon Resistor Wirewound 35.7 OHM 5% 1.5W 20PPM AXIAL Thru-Hole T/R Original PDF

    UT235 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    157 C

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UT2352 UT2352 UT2352L-AE3-R UT2352G-AE3-R OT-23 QW-R502-157 157 C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION  As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UT2352 UT2352 UT2352G-AE3-R OT-23 QW-R502-157

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT2352 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UT2352 UT2352 UT2352L-AE3-R UT2352G-AE3-R OT-23 QW-R502-157

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UT2352 UT2352 UT2352L UT2352-AE3-R UT2352L-AE3-R OT-23 QW-R502-157

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS UT234-UT347, UT249-UT363 UT251-UT364, UT261-UT268 RECTIFIERS 1 Amp to 2 Amp MAXIMUM RATINGS Peak Inverse Voltage 1 Amp Series 100V 200V 400V 500V 600V 800V 1000V 1.25 Amp Series 1.5 Amp Series 2 Amp Series UT236 UT234 UT235 UT237 UT238


    Original     		PDF UT234-UT347, UT249-UT363 UT251-UT364, UT261-UT268 UT236 UT234 UT235 UT237 UT238 UT361

    UT2352G-AE3-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		PDF UT2352 UT2352 UT2352L UT2352G UT2352-AE3-R UT2352L-AE3-R UT2352G-AE3-R OT-23 QW-R502-157 UT2352G-AE3-R

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    UT347

    Abstract: Microsemi micronote series 050 UT362 UT242
    Text: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT268 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.


    Original     		PDF UT236 UT347, UT249 UT363, UT251 UT364 UT261 UT268 T4-LDS-0289, UT347 Microsemi micronote series 050 UT362 UT242

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    UT347

    Abstract: Microsemi micronote series 050
    Text: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT368 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.


    Original     		PDF UT236 UT347, UT249 UT363, UT251 UT364 UT261 UT368 T4-LDS-0289, UT347 Microsemi micronote series 050

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    JANTX1N5618

    Abstract: JANTX1N5616 1N4004 GS1G jantxV1n4247 JANTX1N4246 JANS1N5618 JAN1N3613 1-N3612
    Text: Standard Recovery Rectifiers REC Part Number Microsemi Division- Package Outline Type UR125 1N3612 1N4004 1N4004GP 1N4246 1N5616 1N5616US DL4004 GS1G JAN1N3612 JAN1N4246 JAN1N5616 JAN1N5616US JANS1N5616 JANS1N5616US Watertown Santa Ana Chatsworth Chatsworth


    OCR Scan     		PDF DO-41 DL-41 D0-214AC JANTX1N5618 JANTX1N5616 1N4004 GS1G jantxV1n4247 JANTX1N4246 JANS1N5618 JAN1N3613 1-N3612

    B10K

    Abstract: 6 AMP 1000V DIODE lead UT347 power Diode 800V 20A TO2A PIV RATING 14 V DIODE UT362 UT234 UT242 UT249
    Text: P F P T IF IF R Q !? J ¡T , * x OA Standard Recovery, 1 Am p to 2 Am p UT236-UT347 UT249-UT363 UT2 5 1 -UT364 UT261-UT268 FEATURES DESCRIPTION • C on tinu ou s Rating: to 2 A • Controlled A valanche These m iniature power rectifiers offer the user extreme reliability for high-rel


    OCR Scan     		PDF UT236-UT347 UT249UT363 ut251-ut364 UT261-UT268 UT236 UT249 UT251 UT261 UT234 UT242 B10K 6 AMP 1000V DIODE lead UT347 power Diode 800V 20A TO2A PIV RATING 14 V DIODE UT362

    USD1120

    Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
    Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A


    OCR Scan     		PDF DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    UT347

    Abstract: UT234 UT236 UT242 UT249 UT251 UT252 UT261 UT262 UT363
    Text: R FP TIFIFR Q ? J I f i r •. A r\ UT236UT347 UT249-UT363 UT251-UT364 UT261-UT268 a Standard Recovery, 1 Amp to 2 Amp FEATURES DESCRIPTION • • • • • These m iniature power rectifiers offer the user extreme reliab ility for high-rel m ilitary supplies.


    OCR Scan     		PDF UT236UT347 UT249 UT363 ut251-ut364 UT261-UT268 UT236 UT251 UT261 UT234 UT347 UT242 UT252 UT261 UT262 UT363