Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UTC 30N06 Search Results

    UTC 30N06 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    NP30N06QDK-E1-AY Renesas Electronics Corporation 60 V - 30 A - Dual N-channel Power MOS FET, HSON, /Embossed Tape Visit Renesas Electronics Corporation

    UTC 30N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original
    PDF 30N06 30N06 QW-R502-087

    30N06L-TA3-T

    Abstract: 30N06 mosfet to-220f 60v
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original
    PDF 30N06 O-252 30N06 O-220 O-220F QW-R502-087 30N06L-TA3-T mosfet to-220f 60v

    UTC 30N06

    Abstract: 30N06 30N06L-TA3-T 30N06L mosfet TEST diode t2 4a 30N06-TA3-T 30N06-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original
    PDF 30N06 30N06 30N06L QW-R502-087 UTC 30N06 30N06L-TA3-T 30N06L mosfet TEST diode t2 4a 30N06-TA3-T 30N06-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original
    PDF 30N06V-Q 30N06V-Q 30N06VL-TM3-T 30N06VG-TM3-T O-251 QW-R502-A29.

    30N06L-TA3-T

    Abstract: 30n06l UTC 30N06 30N06 30N06-TA3-T 30N06-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original
    PDF 30N06 O-220 30N06 O-220F QW-R502-087 30N06L-TA3-T 30n06l UTC 30N06 30N06-TA3-T 30N06-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 TO-252 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original
    PDF 30N06 O-252 30N06 O-220 O-22at QW-R502-087

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 60V, 30A N-CHANNEL POWER MOSFET Power MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original
    PDF 30N06 O-220F O-220 30N06 QW-R502-087

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06-Q 60V, 30A N-CHANNEL POWER MOSFET Power MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original
    PDF 30N06-Q O-220F O-220 30N06-Q QW-R502-979.