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    UV PHOTODIODE SIC01M Search Results

    UV PHOTODIODE SIC01M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EP610DI-30 Rochester Electronics LLC UV PLD, 32ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP610DM-35 Rochester Electronics LLC UV PLD, 37ns, CMOS, CDIP24, 0.300 INCH, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP610DC-25 Rochester Electronics LLC UV PLD, 27ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP1810GC-35 Rochester Electronics LLC UV PLD, 40ns, CMOS, CPGA68, WINDOWED, CERAMIC, PGA-68 Visit Rochester Electronics LLC Buy
    EP610DC-30 Rochester Electronics LLC UV PLD, 32ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy

    UV PHOTODIODE SIC01M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    uvc photodiode

    Abstract: uv sensor SIC01M silicon carbide TO-39, UVC
    Text: UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294


    Original     		PDF SIC01M-C uvc photodiode uv sensor SIC01M silicon carbide TO-39, UVC

    uv flame sensor

    Abstract: FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M
    Text: Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area


    Original     		PDF SIC01M S280nm S400nm uv flame sensor FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M

    SIC01M-18

    Abstract: No abstract text available
    Text: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


    Original     		PDF SIC01M-18 SIC01M-18

    SIC01M-5LENS

    Abstract: No abstract text available
    Text: SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


    Original     		PDF SIC01M-5LENS SIC01M-5LENS

    SIC01S-C18

    Abstract: No abstract text available
    Text: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


    Original     		PDF SIC01S-C18 SIC01S-C18

    SIC01L-18

    Abstract: No abstract text available
    Text: SIC01L-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


    Original     		PDF SIC01L-18 SIC01L-18

    SIC01S-18

    Abstract: No abstract text available
    Text: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


    Original     		PDF SIC01S-18 SIC01S-18

    SIC01XL-5

    Abstract: No abstract text available
    Text: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


    Original     		PDF SIC01XL-5 SIC01XL-5

    SIC01S-B18

    Abstract: No abstract text available
    Text: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


    Original     		PDF SIC01S-B18 SIC01S-B18

    SIC01S-18ISO90

    Abstract: SiC Photodiodes
    Text: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC


    Original     		PDF SIC01S-18ISO90 SIC01S-18ISO90 SiC Photodiodes

    SIC01L-5

    Abstract: No abstract text available
    Text: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


    Original     		PDF SIC01L-5 SIC01L-5

    SIC01L-C5

    Abstract: No abstract text available
    Text: SIC01L-C5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


    Original     		PDF SIC01L-C5 SIC01L-C5

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


    Original     		PDF RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI