C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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Untitled
Abstract: No abstract text available
Text: P RE L I M I NARY Detectors UV-Enhanced Silicon Avalanche Photodiode SUR-Series Description The SUR-Series is based on a silicon “reach-through” structure with high sensitivity in the DUV/UV wavelength range . Many applications particularly in the medical and
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C10500
Abstract: linear CCD 512 TDI cmos image sensor
Text: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide
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KAPD0002E12
C10500
linear CCD 512
TDI cmos image sensor
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SIC01L-18
Abstract: No abstract text available
Text: SIC01L-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01L-18
SIC01L-18
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SIC01L-5
Abstract: No abstract text available
Text: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01L-5
SIC01L-5
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SIC01L-C5
Abstract: No abstract text available
Text: SIC01L-C5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01L-C5
SIC01L-C5
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laser range finder schematics
Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series
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uv sensors
Abstract: uv photodiode 400nm uv uv photodiode wavelength 250 to 260 PDU-S101
Text: UV Enhanced SiC Detectors PDU-S101 PACKAGE DIMENSIONS INCH [mm] HEADER 0.100 [2.54] PIN CIRCLE CL 0.210 [5.33] WINDOW CAP WELDED 0.155 [3.98] WIRE BONDS 0.055 [1.40] 45° Ø0.018 [0.46] VIEWING ANGLE 87° CHIP 0.500 [12.70] Ø0.185 [4.70] STANDOFF 0.150 [3.81]
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PDU-S101
280nm
08mm2
PDU-S101
200nm
400nm
5x10-14
660nm
uv sensors
uv photodiode
400nm uv
uv photodiode wavelength 250 to 260
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Untitled
Abstract: No abstract text available
Text: Technical information Current output type CMOS linear image sensors with variable integration time function S10121 to S10124 series 1 [Figure 1] Block diagram Features a NMOS linear image sensor (S3901 to S3904 series) Start pulse In previous current output type NMOS linear image
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S10121
S10124
S3901
S3904
B1201,
KMPD9008E01
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TW30SX
Abstract: 200w power amplifier PCB layout TL07x UV photodiodes TW30 TW30DZ uv sensor OPA128 photodiode amplifier schottky photodiode
Text: Special UV-Index Sensor “ERYCA” Read important application notes on page 5 ff. Features of the ERYCA special UV-Index Sensor The UVI With an Sensor ERYCA is a further development of our product Ery additional filter the accordance with the erythema action curve of the human skin
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007/E
OPA128
TL07x,
SLOA011)
TW30SX
200w power amplifier PCB layout
TL07x
UV photodiodes
TW30
TW30DZ
uv sensor
photodiode amplifier
schottky photodiode
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uv photodiode
Abstract: UV diode 280 nm diode 340 PDU-G102B
Text: UV Enhanced GaN Detectors PDU-G102B PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE
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PDU-G102B
320nm
PDU-G102B
200nm
350nm
660nm
uv photodiode
UV diode 280 nm
diode 340
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UV diode 280 nm
Abstract: uv photodiode UV diode 320 nm gw 340 uv detector smd transistor nm diode 340 sj 2038 uv detector circuit PDU-G106B-SM
Text: UV Enhanced GaN Detectors PDU-G106B-SM PACKAGE DIMENSIONS inch [mm] .095 [2.43] .020 [0.50] .110 [2.80] .083 [2.10] CATHODE 45° .032 [0.80] .138 [3.50] .126 [3.20] Ø.095 [2.40] .075 [1.90] .032 [0.80] QUARTZ WINDOW .034 [0.85] .091 [2.30] .058 [1.48] ANODE
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PDU-G106B-SM
320nm
PDU-G106B
200nm
350nm
660nm
UV diode 280 nm
uv photodiode
UV diode 320 nm
gw 340
uv detector
smd transistor nm
diode 340
sj 2038
uv detector circuit
PDU-G106B-SM
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Abstract: No abstract text available
Text: UV Enhanced GaN Detectors PDU-G102B PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE
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PDU-G102B
320nm
PDU-G102B
200nm
RATI350nm
660nm
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PDU-G106B-SM
Abstract: uv photodiode 320nm
Text: UV Enhanced GaN Detectors PDU-G106B-SM PACKAGE DIMENSIONS inch [mm] .095 [2.43] .020 [0.50] .110 [2.80] .083 [2.10] CATHODE 45° .032 [0.80] .138 [3.50] .126 [3.20] Ø.095 [2.40] .075 [1.90] .032 [0.80] QUARTZ WINDOW .034 [0.85] .091 [2.30] .058 [1.48] ANODE
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PDU-G106B-SM
320nm
PDU-G106B-SM
200nm
350nm
660nm
uv photodiode
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Untitled
Abstract: No abstract text available
Text: UV Enhanced GaN Detectors PDU-G101A PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE
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PDU-G101A
365nm
PDU-G101A
200nm
350nm
1X10-13
660nm
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PDU-G105A-SM
Abstract: No abstract text available
Text: UV Enhanced GaN Detectors PDU-G105A-SM PACKAGE DIMENSIONS inch [mm] .095 [2.43] .020 [0.50] .110 [2.80] .083 [2.10] CATHODE 45° .032 [0.80] .138 [3.50] .126 [3.20] Ø.095 [2.40] .075 [1.90] .032 [0.80] QUARTZ WINDOW .034 [0.85] .091 [2.30] .058 [1.48] ANODE
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PDU-G105A-SM
PDU-G105A-SM
200nm
365nm
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L9657
Abstract: S10604
Text: 2007 Vol.2 E x h i b i t i o n s NEWS 2007 Vol.2 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / November Vision 2007 Stuttgart / Germany UKAEA (Oxford / UK) Productronica 2007 (Munich / Germany) 35th Scottish Microscopy Symposium
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SE-17141
52/1A
RU-113054
L9657
S10604
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Untitled
Abstract: No abstract text available
Text: TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER r r TAOS023D − JUNE 2007 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D D D PACKAGE S SIDELOOKER FRONT VIEW Photodiode, Operational Amplifier, and Feedback Components
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TSL257
TAOS023D
TSL257
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Abstract: No abstract text available
Text: TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER r r TAOS023E − SEPTEMBER 2007 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D D D PACKAGE S SIDELOOKER FRONT VIEW Photodiode, Operational Amplifier, and Feedback Components
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TSL257
TAOS023E
TSL257
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TSL257-LF
Abstract: J-STD-020D TSL257
Text: TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER r r TAOS023E − SEPTEMBER 2007 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D D D PACKAGE S SIDELOOKER FRONT VIEW Photodiode, Operational Amplifier, and Feedback Components
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TSL257
TAOS023E
TSL257
TSL257-LF
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: [email protected] Please visit our website at www.ams.com
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TSL257
TAOS023E
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Untitled
Abstract: No abstract text available
Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain
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KAPD0001E05
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uv photodiode
Abstract: PDU-G102B 320nm
Text: UV Enhanced GaN Detectors PDU-G102B Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm]
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PDU-G102B
320nm
PDU-G102B
200nm
350nm
uv photodiode
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE 100 mm2 SXUV100 FEATURES • Single active area • Detection to 1 nm • Stable response after exposure to EUV/UV conditions • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area
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