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    V 2 E DIODE Search Results

    V 2 E DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    V 2 E DIODE Price and Stock

    Infineon Technologies AG KITTVSDIODE2TOBO1

    Circuit Protection Kits KIT TVS DIODE 2 SP000410822
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KITTVSDIODE2TOBO1
    • 1 $29.27
    • 10 $25.79
    • 100 $20.91
    • 1000 $19.52
    • 10000 $19.52
    Get Quote

    Hirschmann Electronics GmbH & Co Kg RAIL DATA DIODE LV

    Networking Modules Data Diode for 24 V operating voltage
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RAIL DATA DIODE LV
    • 1 $6745.8
    • 10 $6745.8
    • 100 $6745.8
    • 1000 $6745.8
    • 10000 $6745.8
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    Hirschmann Electronics GmbH & Co Kg RAIL DATA DIODE HV

    Networking Modules Data Diode for 110 VDC and 110 / 230 VAC operating voltage
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RAIL DATA DIODE HV
    • 1 $7376.31
    • 10 $7376.31
    • 100 $7376.31
    • 1000 $7376.31
    • 10000 $7376.31
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    Infineon Technologies AG KITTVSDIODE1TOBO1

    Circuit Protection Kits
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KITTVSDIODE1TOBO1
    • 1 $29.27
    • 10 $25.79
    • 100 $20.91
    • 1000 $19.52
    • 10000 $19.52
    Get Quote

    V 2 E DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e


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    PDF BAW100

    smd JSs diode

    Abstract: smd JSs smd JSs 75 marking JSs BAW100 smd JS smd JSs 85 smd JS p
    Text: Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e


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    PDF BAW100 smd JSs diode smd JSs smd JSs 75 marking JSs BAW100 smd JS smd JSs 85 smd JS p

    PEF 4265 T V2.1

    Abstract: PEF4265 PG-VQFN-48-15 PEF 4265 PEF4265T GEMINAX MAX d PEB 4265 V1.2 peb 4365 V2.1 GEMINAX - GEMINAX FAMILY vinetic
    Text: O c t o b e r 2 00 6 S LIC -E / TS LIC -E S ub s c ri be r L in e I n t e rf a c e C i rc u it E nh an c ed F ea t ur e S et S LI C - E P E F 42 65 , V er s io n 2 . 1 S LI C - E 2 (P E F 4 26 5- 2) , V e rs i on 2. 1 T S L I C - E ( P E F 4 36 5) , V er s i o n 2 . 1


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    PDF PG-DSO-36-15 PEF 4265 T V2.1 PEF4265 PG-VQFN-48-15 PEF 4265 PEF4265T GEMINAX MAX d PEB 4265 V1.2 peb 4365 V2.1 GEMINAX - GEMINAX FAMILY vinetic

    MC68F375

    Abstract: diode B14A S4 46a DIODE schottky QADC64 XTAL 5V tx 2b rx 2b
    Text: APPENDIX E ELECTRICAL CHARACTERISTICS E.1 Absolute Maximum Ratings Table E-1 Absolute Maximum Ratings Num Rating Symbol V 1, 2, 6 3.3V Supply Voltage 1 V DDL, 5V Supply Voltage DDDP- TRAM V Value – 0.3 to + 4.0 – 0.3 to + 6.0 Unit V DDH 2 1, 2, 4, 6 Input Voltage


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    PDF MC68F375 MC68F375 diode B14A S4 46a DIODE schottky QADC64 XTAL 5V tx 2b rx 2b

    smd jpS

    Abstract: smd JS SMD MARKING E 5 smd diode s 4 j SMD MARKING P smd ja smd transistor js BAW101 GE-250 smd JS p
    Text: Diodes SMD Type Silicon Switching Diode Array BAW101 Unit: mm Features Electrically insulated high-voltage medium-speed diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e v o lta g e P e a k re v e rs e v o lta g e


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    PDF BAW101 smd jpS smd JS SMD MARKING E 5 smd diode s 4 j SMD MARKING P smd ja smd transistor js BAW101 GE-250 smd JS p

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12068/B International SRectifier SD 603C.C s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 1.0 to 2 .0 ps re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 2 2 0 0 V


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    PDF 12068/B D-713 SD603C. 00274ba D-714

    sd6c

    Abstract: 1885A diode d707
    Text: Bulletin 12068/B International S Rectifier SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features • H ig h p o w e r F A S T re c o v e ry d io d e s e r ie s ■ 1 .0 to 2 .0 |js re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 2 2 0 0 V


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    PDF 12068/B SD603C. D-713 D-714 sd6c 1885A diode d707

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12068 rev. B 09/94 International lö R Rectifier SD603C.C FAST RECOVERY DIODES s e r ie s Hockey Puk Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 1.0 to 2 .0 |is re c o v e ry lim e ■ H igh v o lta g e ra tin g s up to 2 2 0 0 V


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    PDF SD603C.

    Untitled

    Abstract: No abstract text available
    Text: □ I X Y IXSH15N120AU1 S P R E L IM IN A R Y D A T A S H E E T IGBT with Diode ^C 2 5 "S" Series - Improved SCSOA Capability Symbol T est C onditions V CES T j = 2 5 °C to 150°C V CGR T j = 2 5 °C to 150°C ; f^E= 1 M ß V GES V CES V CE sat M axim um Ratings


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    PDF IXSH15N120AU1 125-C, -100A/ 1005C, 125-C D-68619;

    PS3638

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Symbol Value Unit C o lle c to r -E m itte r V o lta g e VCEO -2 5 V dc C o lle c to r -E m itte r V o lta g e VCES -2 5 V dc C o lle c to r-B a s e V o lta g e VCBO -2 5 Vdc E m itte r-B a s e V o lta g e Ve b o -4 .0 V dc >C -5 0 0 m Adc


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    PDF

    01d100

    Abstract: D626 D627 4-16UNF rs2020
    Text: Bulletin 12064/A International li»!]Rectifier SD203N/R SERIES Stud Version FAST RECOVERY DIODES Features • H ig h p o w e r F A S T re c o v e ry d io d e s e r ie s ■ 1 .0 to 2 .0 ■ H ig h v o lta g e ra tin g s up to 2 5 0 0 V ijs re c o v e ry tim e


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    PDF 12064/A SD203N/R D-626 D-627 01d100 D626 D627 4-16UNF rs2020

    DIODE BA244

    Abstract: 1n4148 ITT 30M5R DIODE BA243 BA244 ITT 1N4150 155pa3 BA243 BAX13 ITT44
    Text: ITT Sem iconductors Diodes Epitaxial Pianar Diode Sw itches R E F E R E N C E T A B L E . Forr.f. bandsw itching up to 1000 M H z Code Switching Band V BH| min. V R F max. at l F O mA C max. pf BA243 B A244 VHF UHF 20 20 1.0 0.5 2 2 10 10 at V„ V Outline


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    PDF BA243 BA244 277MR 27729F BA157 3M13R BA158 30914G BA159 3091SE DIODE BA244 1n4148 ITT 30M5R DIODE BA243 ITT 1N4150 155pa3 BAX13 ITT44

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12062/A International S R ectifier s d io 3n /r s e rie s FAST RECOVERY DIODES Stud Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 1.0 to 2 .0 ps re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 2 5 0 0 V


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    PDF 12062/A D0-30 D-608 SD103N/R D-609

    10 watt zener diode

    Abstract: ZY12 10 watts zener diode ZY22 ZY11 ZY13 ZY15 ZY200 ZY marking ZENER DIODE Marking ZY
    Text: ZY11 - ZY200 SILICON POWER ZENER DIODE Features_ • 2 W a tt P o w e r D iss ip a tio n • Z e n e r V o lta g e s fro m 1 1 V - 2 0 0 V • G ra d e d p e r In te rn a tio n a l E 2 4 S ta n d a rd I Mechanical Data • C a s e : G la s s , D O -4 1


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    PDF ZY200 DO-41 MIL-STD-202, DS21406 ZY11-ZY200 10 watt zener diode ZY12 10 watts zener diode ZY22 ZY11 ZY13 ZY15 ZY200 ZY marking ZENER DIODE Marking ZY

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS IXSH10N120AU1 PR E LIM IN A R Y D A T A S H E E T ^C25 IGBT with Diode V CES V CE sat "S" Series - Improved SCSOA Capability Sym bol T est C o n d itio n s V CES Tj = 2 5 °C to 150°C V CGR Tj = 2 5 °C to 150°C; f^E= 1 M£i 1200 V 4.0 V M axim um R atings


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    PDF IXSH10N120AU1 125-C, -247A 125-C 1005C, D-68623

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12074 rev.C 02/97 International IÖ R Rectifier SD823C.C SERIES FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 2 .0 to 3 .0 fis re c o v e ry lim e ■ H igh v o lta g e ra tin g s up to 2 5 0 0 V


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    PDF SD823C.

    lem lc 1000-s

    Abstract: No abstract text available
    Text: SCU000/SCU001/SC11005 212A/V.22/V.22bis Modem Filters SIERRA SEMICONDUCTOR 2 4 -P IN D IP PA CK A G E 2& -P IN PLCC PA CK A G E □ B e ll 2 1 2 A , C C IT T V .2 2 an d V .2 2 b is co m p atib le w ith V .22 notch filters □ A n alog L oo p b ack capability


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    K D688

    Abstract: 3S-2000 D687 DCD-800 D690
    Text: Bulletin 12075/C International [k >r ]Rectifier sd703c .l s e rie s FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 2 .0 to 3 .0 ms recovery tim e ■ H igh v o lta g e ra tin g s up to 2 5 0 0 V


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    PDF 12075/C sd703c D-695 SD703C. D-696 K D688 3S-2000 D687 DCD-800 D690

    D602 diode

    Abstract: rectifier d606
    Text: Bulletin 12062/A bitemational S Rectifier s d io 3n /r s e rie s FAST RECOVERY DIODES Stud Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 1.0 to 2 .0 ps re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 2 5 00V ■


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    PDF 12062/A D-608 SD103N/R D602 diode rectifier d606

    2n h 2222a

    Abstract: 2N2218 2222a 2N5581 ip 2222A
    Text: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s


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    PDF 2N2218A 2N2219 2N2222 2N2218, /2N2219 O-205AD) 2N2218 /19/19A/22/22A 2n h 2222a 2222a 2N5581 ip 2222A

    1n4146 zener

    Abstract: Zener diode 1N4146 LM 317 TO 92 PACKAGE THOMSON LM LM33S LM238 LM336 lm336 pin diagram 1N4148 thomson 1N4148
    Text: THOMSON SEMICONDUCTORS 2.5 V V O L T A G E REFERENCES 2.5 V V O L T A G E REFERENCES The LM 236 and LM 336 are précision 2 ,5 V regulator diodes. These voltage refe­ rence monolithic ICs operate like 2 .5 V zener diodes w ith a Ipw tem perature coefficient and a dynam ic im pedance of 0 .2 ]. A third pin enabies adjusting


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    PDF LM236 LM336 CB-97 LM33S LM236AZ 1n4146 zener Zener diode 1N4146 LM 317 TO 92 PACKAGE THOMSON LM LM238 lm336 pin diagram 1N4148 thomson 1N4148

    diode sv 03

    Abstract: SV-03 diode 1S2359 VR-60 VR-61 Diode SV-06
    Text: SILICON RECTIFIER DIODE SKShows avalanche C olor code Effective current mA (Continuous, Ta=40'C) S V-1 Brown 500 C u rre n t fo r 0 .3 V (L e s s than 5 0 / iA ) , 1 00m A (L e s s than 1V) V o lta g e for S V -2 Red 150 C u rre n t fo r 1 .2 V (L e s s than 5 0 j« A ),


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    PDF 50/iA) 100mA 50//A) VR-60 VR-61 1S2359 11S2359 diode sv 03 SV-03 diode 1S2359 Diode SV-06

    diode sv 03

    Abstract: for1a 1S2359 VR-60 VR-61 color code diode VR60
    Text: SILICON R E C T IF IE R DIODE SKShows avalanche C olor code Effective current mA (Continuous, Ta=40'C) S V-1 Brown 500 C u rre n t fo r 0 .3 V (L e s s than 5 0 / iA ) , 1 00m A (L e s s than 1V) V o lta g e for S V -2 Red 150 C u rre n t fo r 1 .2 V (L e s s than 5 0 j« A ),


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    PDF 50/iA) 100mA 50//A) VR-60 VR-61 1S2359 11S2359 diode sv 03 for1a 1S2359 color code diode VR60

    design of 4-20mA transmitter for bridge type transducer using op-amp

    Abstract: design of 4-20mA transmitter for bridge type transducer using op-amp instrumentation amplifier motorola mts 102 Wheatstone Bridge amplifier ina114 Jerald Graeme OPA502 Non-Linear Circuits Handbook Analog Devices Voltage Variable Capacitance Diodes 1976 3 phase ac motor speed control 4-20mA transmitter for a bridge type transducer using op-amp
    Text: Noise Gain vs Frequency Plot f = - 1- 1 27t R1|R2 C1+ C A+ C 2+ C Rj f 1 = 2*Ri (Ci + C , J fA = A n i. 2 jcR , ( C i + C J Noise Calculation Example v OOT( N o i s e ) = V e ; + e ! + e 3 + e ; + e ; + < + e ;


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    PDF 20dB/decade, design of 4-20mA transmitter for bridge type transducer using op-amp design of 4-20mA transmitter for bridge type transducer using op-amp instrumentation amplifier motorola mts 102 Wheatstone Bridge amplifier ina114 Jerald Graeme OPA502 Non-Linear Circuits Handbook Analog Devices Voltage Variable Capacitance Diodes 1976 3 phase ac motor speed control 4-20mA transmitter for a bridge type transducer using op-amp