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    VARIABLE GAIN AMPLIFIERS FREESCALE Search Results

    VARIABLE GAIN AMPLIFIERS FREESCALE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    CLC522A/B2A Rochester Electronics LLC CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701M2A) Visit Rochester Electronics LLC Buy
    CLC522A/BCA Rochester Electronics LLC CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701MCA) Visit Rochester Electronics LLC Buy
    LM108AL Rochester Electronics LLC LM108 - Super Gain Op Amp Visit Rochester Electronics LLC Buy
    LM108AJ-8/B Rochester Electronics LLC LM108 - Super Gain Op Amp Visit Rochester Electronics LLC Buy

    VARIABLE GAIN AMPLIFIERS FREESCALE Datasheets Context Search

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    RADIO BASE STATION 6000

    Abstract: 802.11a Amplifier MMG3007N MMG3008N MMG3009N MMG3012N BR1606 Variable Gain Amplifiers freescale MMG30XX MMG3006N
    Text: Freescale Semiconductor General Purpose Amplifiers GPA Solutions Amplify your next design Expanded—Freescale’s General Purpose Amplifier Portfolio Freescale's GPA portfolio offers products Leveraging Freescale Semiconductor’s technologies. The HFET devices offer higher


    Original     		PDF BR1606 RADIO BASE STATION 6000 802.11a Amplifier MMG3007N MMG3008N MMG3009N MMG3012N BR1606 Variable Gain Amplifiers freescale MMG30XX MMG3006N

    Instrumentation operational Amplifiers freescale

    Abstract: negative PRESSURE SENSOR MPX10 AN1525 for pressure sensor
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1525/D AN1525 The A-B-C's of Signal-Conditioning Amplifier Design for Sensor Applications Freescale Semiconductor, Inc. Prepared by: Eric Jacobsen and Jeff Baum


    Original     		PDF AN1525/D AN1525 Instrumentation operational Amplifiers freescale negative PRESSURE SENSOR MPX10 AN1525 for pressure sensor

    MPX10

    Abstract: AN1525 ideal op-amp derivation
    Text: Freescale Semiconductor Application Note AN1525 Rev 1, 05/2005 The ABCs of Signal-Conditioning Amplifier Design for Sensor Applications by: Eric Jacobsen and Jeff Baum, Sensor Applications Engineering Signal Products Division, Phoenix, AZ INTRODUCTION Although fully signal-conditioned, calibrated, and


    Original     		PDF AN1525 MPX10 AN1525 ideal op-amp derivation

    SXE-1089

    Abstract: bt05cv SPA-1426 CMM6004 SPB2026 BT013 SOF-26 SPA-1526 MMG15241 SPB-2026
    Text: Freescale Semiconductor General Purpose Amplifiers GPA Solutions Amplify your next design Expanded—Freescale’s General Purpose Amplifier Portfolio Freescale's GPA portfolio offers products Leveraging Freescale Semiconductor’s technologies. The HFET devices offer higher


    Original     		PDF OT-89 BG13B BR1606 SXE-1089 bt05cv SPA-1426 CMM6004 SPB2026 BT013 SOF-26 SPA-1526 MMG15241 SPB-2026

    MCM20128

    Abstract: CMOS global shutter cmos IMAGE SENSOR global shutter cmos image sensor motorola CMOS digital image sensor with global shutter ccd IMAGE SENSOR global shutter CMOS image sensor with global shutter global shutter image sensor true global shutter global shutter
    Text: Freescale Semiconductor, Inc. Fact Sheet MCM20128 Freescale Semiconductor, Inc. SXGA 1280 X 1024 PIXELS CMOS DIGITAL IMAGE SENSOR OVERVIEW The MCM20128 is a fully integrated, high-performance complementary metal oxide semiconductor (CMOS) image sensor. Its features include integrated timing,


    Original     		PDF MCM20128 MCM20128 48-pin 10-bit MCM20128FACT/D CMOS global shutter cmos IMAGE SENSOR global shutter cmos image sensor motorola CMOS digital image sensor with global shutter ccd IMAGE SENSOR global shutter CMOS image sensor with global shutter global shutter image sensor true global shutter global shutter

    2N5109 motorola

    Abstract: 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1024/D SEMICONDUCTOR APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc.


    Original     		PDF AN1024/D AN1024 2N5109 motorola 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator

    PRBS-9

    Abstract: MC1319x MC1320x MC1321X 13192-SARD 802154MPSRM AN3231 HCS08 MC9S08QE128 c programming hcs08
    Text: Simple Media Access Controller SMAC User’s Guide Document Number: SMACRM Rev. 1.5 03/2008 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


    Original     		PDF CH370 MC13192 PRBS-9 MC1319x MC1320x MC1321X 13192-SARD 802154MPSRM AN3231 HCS08 MC9S08QE128 c programming hcs08

    variable resistor 500

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001 MW4IC001NR4 MW4IC001MR4 variable resistor 500

    200w power amplifier circuit diagram

    Abstract: AN1385 LDMOS digital ISL21400 MRF9080
    Text: LDMOS Transistor Bias Control in Basestation RF Power Amplifiers Using Intersil’s ISL21400 Application Note February 27, 2007 Introduction AN1385.0 The ISL21400 Programmable Output Temperature Sensor IC LDMOS transistors are used for RF Power Amplification in


    Original     		PDF ISL21400 AN1385 ISL21400 200w power amplifier circuit diagram LDMOS digital MRF9080

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1007H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1007HR5 MMRF1007HSR5 RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1007H MMRF1007HR5 MMRF1007HSR5 MMRF1007HR5

    Tantalum Capacitor kemet

    Abstract: HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHR6 MRF6VP121KHSR6 A114 A115 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 1, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 Tantalum Capacitor kemet HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHSR6 A114 A115 C101

    biosensor

    Abstract: abstract on biomedical instruments photo glucose tod meter circuit diagram biosensor ,impedance 0b111 circuit diagram glucose meter
    Text: Freescale Semiconductor Quick Reference User Guide Abstract Document Number: ANPERIPHQRUG Rev. 0, 07/2010 Quick Reference User Guide for Analog Peripherals on the MM and JE Family by: Alejandra Guzman, Wang Hao, Han Lin, Carlos Neri, Medina Rimoldi Cuauhtemoc


    Original     		PDF 16-bit 12-bit biosensor abstract on biomedical instruments photo glucose tod meter circuit diagram biosensor ,impedance 0b111 circuit diagram glucose meter

    250GX-0300-55-22

    Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114

    250GX-0300-55-22

    Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 Arlon AN1955 MRF6VP121KHSR6

    MRF873

    Abstract: motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1526/D AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances:


    Original     		PDF AN1526/D AN1526 MRF873 motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1015N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1015NR1 MMRF1015GNR1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and


    Original     		PDF MMRF1015N MMRF1015NR1 MMRF1015GNR1 MMRF1015NR1

    GaAs MESFET amplifier with high input impedance

    Abstract: mesfet datasheet by motorola DCS1800 GSM900 MMM5062 PCS1900
    Text: Fact Sheet Freescale Semiconductor, Inc. MMM5062 QUAD-BAND, SINGLE POWER SUPPLY, POWER AMPLIFIER MODULE Freescale Semiconductor, Inc. For GSM/GPRS Handsets The MMM5062 is a Quad-Band, Single Power Supply, Power Amplifier Module for use in GSM/GPRS cellular


    Original     		PDF MMM5062 MMM5062 50-ohm GSM850ed MMM5062FACT/D GaAs MESFET amplifier with high input impedance mesfet datasheet by motorola DCS1800 GSM900 PCS1900

    NIPPON CAPACITORS

    Abstract: A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H - 2 Rev. 3, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		PDF MRF5S9150H MRF5S9150HSR3 150icers, MRF5S9150H-2 NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi

    ATC100B9R1CT500XT

    Abstract: 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS MRF6VP41KHR6 A114
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 4, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6VP41KHR6 MRF6VP41KHSR6 Designed primarily for pulsed wideband applications with frequencies up to


    Original     		PDF MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 MRF6VP41KHR6 ATC100B9R1CT500XT 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS A114

    330 j73 Tantalum Capacitor

    Abstract: 600S1 J162 600S100 100B4R7
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001 MW4IC001NR4 MW4IC001MR4 330 j73 Tantalum Capacitor 600S1 J162 600S100 100B4R7

    J327

    Abstract: 726 j68 j139
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001 MW4IC001NR4 MW4IC001MR4 J327 726 j68 j139

    330 j73 Tantalum Capacitor

    Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9045N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this


    Original     		PDF MRFE6S9045N MRFE6S9045NR1

    mosfet j133

    Abstract: MRFE6S9045NR1 J133 mosfet ALT1110 A113 A114 A115 Nippon chemi ATC100B470JT500XT C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9045N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this


    Original     		PDF MRFE6S9045N MRFE6S9045NR1 mosfet j133 MRFE6S9045NR1 J133 mosfet ALT1110 A113 A114 A115 Nippon chemi ATC100B470JT500XT C101