Untitled
Abstract: No abstract text available
Text: HMC680LP4 / 680LP4E v00.0308 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features The HMC680LP4 E is ideal for: TTL/CMOS compatible parallel or latched parallel control interface • Cellular/3G Infrastructure High Output IP3: +37 dBm (At all gain settings)
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HMC680LP4
680LP4E
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39k ohm resistor
Abstract: Variable resistor 10K ohm 10K variable resistor variable capacitor ETC1-1-13 H680
Text: HMC680LP4 / 680LP4E v02.0209 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features The HMC680LP4 E is ideal for: TTL/CMOS compatible parallel or latched parallel control interface • Cellular/3G Infrastructure High Output IP3: +40 dBm (At all gain settings)
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HMC680LP4
680LP4E
ETC1-1-13)
39k ohm resistor
Variable resistor 10K ohm
10K variable resistor
variable capacitor
ETC1-1-13
H680
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39k ohm resistor
Abstract: No abstract text available
Text: HMC680LP4 / 680LP4E v03.0609 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features The HMC680LP4 E is ideal for: TTL/CMOS compatible parallel or latched parallel control interface • Cellular/3G Infrastructure High Output IP3: +40 dBm (At all gain settings)
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HMC680LP4
680LP4E
39k ohm resistor
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Untitled
Abstract: No abstract text available
Text: HMC680LP4 / 680LP4E v03.0609 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features the HmC680lp4 e is ideal for: ttl/CmOs compatible parallel or latched parallel control interface • Cellular/3g infrastructure High Output ip3: +40 dbm (at all gain settings)
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HMC680LP4
680LP4E
ETC1-1-13)
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ETC1-1-13
Abstract: MC680L H680 HMC680LP4E
Text: HMC680LP4 / 680LP4E v03.0609 BiCMOS MMIC 5-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 30 - 400 MHz Typical Applications Features The HMC680LP4 E is ideal for: TTL/CMOS compatible parallel or latched parallel control interface • Cellular/3G Infrastructure High Output IP3: +40 dBm (At all gain settings)
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HMC680LP4
680LP4E
ETC1-1-13)
ETC1-1-13
MC680L
H680
HMC680LP4E
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Untitled
Abstract: No abstract text available
Text: HMC173MS8 MICROWAVE CORPORATION GaAs MMIC VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz FEBRUARY 2000 Features General Description SINGLE POSITIVE VOLTAGE CONTROL: 0 to +3V The HMC173MS8 is a miniature absorptive voltage variable attenuator in an 8lead MSOP package. The device operates with a positive supply voltage, and a
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HMC173MS8
HMC173MS8
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lot date code panasonic
Abstract: Variable resistor 200K ohm
Text: HMC173MS8 MICROWAVE CORPORATION GaAs MMIC VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz SEPTEMBER 1999 Features General Description SINGLE POSITIVE VOLTAGE CONTROL: 0 to +3V The HMC173MS8 is a miniature absorptive voltage variable attenuator in an 8lead MSOP package. The device operates with a positive supply voltage, and a
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HMC173MS8
HMC173MS8
800-1ave
lot date code panasonic
Variable resistor 200K ohm
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lot code panasonic
Abstract: Variable resistor 200K ohm HMC173MS8 AD822 D-35 LL4148 lot date code panasonic Resistor
Text: HMC173MS8 MICROWAVE CORPORATION GaAs MMIC VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz FEBRUARY 2001 Features General Description SINGLE POSITIVE VOLTAGE CONTROL: 0 to +3V The HMC173MS8 is a miniature absorptive voltage variable attenuator in an 8lead MSOP package. The device operates with a positive supply voltage, and a
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HMC173MS8
HMC173MS8
lot code panasonic
Variable resistor 200K ohm
AD822
D-35
LL4148
lot date code panasonic Resistor
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATA SHEET SFP TRANSCEIVER for SONET/SDH HTR6713 Series for OC-3 IR-1 up to 15km http://www.hitachi-cable.co.jp/ Ref. No.:TE05-01-58-9038G Mar. ‘05 Page 1 of 14 Features l SONET OC-3 IR-1 (155.52Mbit/s, 15km) and SDH STM-1(S-1.1) compliant. (Also compatible
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HTR6713
TE05-01-58-9038G
52Mbit/s,
125Mbit/s
EN60825-1
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YAGEO C0603 X7R
Abstract: KEMET CAP CER COG CHIP 0603 smd Variable resistor 10K ohm SMD RESISTOR 60 OHMS FERRITE L0603 KEMET 1NF 50V 20 SM 0603 0402 X7R 22NF 25v P9812 c2627 equivalent C84-85
Text: 1.0 Design Description This reference design implements a High IF Receiver circuit that utilizes an LMH6515 DVGA and ADC14V155 Analog to Digital Converter ADC . The design illustrates variable gain IF amplification and digitization in wireless infrastructure systems and frequency domain analyzers. This flexible subsystem provides excellent sensitivity for input signal frequencies
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LMH6515
ADC14V155
LMH6515,
14-bit,
CSP-9-111S2)
CSP-9-111S2.
RD-146
YAGEO C0603 X7R
KEMET CAP CER COG CHIP 0603
smd Variable resistor 10K ohm
SMD RESISTOR 60 OHMS
FERRITE L0603
KEMET 1NF 50V 20 SM 0603
0402 X7R 22NF 25v
P9812
c2627 equivalent
C84-85
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Abstract: No abstract text available
Text: HMC628LP4 / 628LP4E v02.0108 BiCMOS MMIC 5-Bit DIGITAL VARIABLE GAIN AMPLIFIER, 50 - 800 MHz Typical Applications Features The HMC628LP4 E is ideal for: TTL/CMOS compatible serial, parallel or latched parallel control interface • Cellular/3G Infrastructure
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HMC628LP4
628LP4E
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1184-15
Abstract: No abstract text available
Text: HMC628LP4 / 628LP4E v02.0108 BiCMOS MMIC 5-Bit DIGITAL VARIABLE GAIN AMPLIFIER, 50 - 800 MHz Typical Applications Features The HMC628LP4 E is ideal for: TTL/CMOS compatible serial, parallel or latched parallel control interface • Cellular/3G Infrastructure
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HMC628LP4
628LP4E
1184-15
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ph c15 diode
Abstract: ph c10 zener diode 34262 ph c15 zener ELECTRONIC BALLAST 1 T8 36w LAMP SCHEMATIC ELECTRONIC BALLAST 36W circuit diagram resistor* 22k ohm C15 ph zener IR2159 rga-ef25
Text: IRPLDIM1 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA IR2159 Dimming Ballast Control IC Design Kit Features = Drives: = = = = = = = 1 x 32W T8 Lamp IRPLDIM1U 1 x 36W T8 Lamp (IRPLDIM1) Input: 90-140VAC/60Hz (IRPLDIM1U) 185-265VAC/50Hz (IRPLDIM1)
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IR2159
90-140VAC/60Hz
185-265VAC/50Hz
IR2159.
ph c15 diode
ph c10 zener diode
34262
ph c15 zener
ELECTRONIC BALLAST 1 T8 36w LAMP SCHEMATIC
ELECTRONIC BALLAST 36W circuit diagram
resistor* 22k ohm
C15 ph zener
rga-ef25
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Abstract: No abstract text available
Text: PRODUCT DATA SHEET SFP TRANSCEIVER for SONET/SDH HTR6413 Series for OC-12 IR-1 up to 15km http://www.hitachi-cable.co.jp/ Ref. No.:TE-05-01-58-9109F Mar. ‘05 Page 1 of 14 Features l SONET OC-12 IR-1 (622.08Mbit/s, 15km) ,SONET OC-3 IR-1(155.52Mbit/s, 15km) ,SDH
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HTR6413
OC-12
TE-05-01-58-9109F
08Mbit/s,
52Mbit/s,
125Mbit/s
EN60825-1
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATA SHEET SFP TRANSCEIVER for Gigabit Ethernet HTR6534 Series for Gigabit Ethernet up to 40km http://www.hitachi-cable.co.jp/ Ref. No.:TE04-02-58-9020D Mar. ‘05 Page 1 of 14 Features l For 40km transmission of Gigabit Ethernet (1.25Gbit/s) and Fibre Channel (1.0625Gbit/s).
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HTR6534
TE04-02-58-9020D
25Gbit/s)
0625Gbit/s)
EN60825-1
1310nm
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Abstract: No abstract text available
Text: PRODUCT DATA SHEET SFP TRANSCEIVER For Fibre channel HTR8511 Series for 2G-Fibre channel up to 80km http://www.hitachi-cable.co.jp/ Ref. No.:TE04-01-58-9043H Mar. ‘05 Page 1 of 14 Features l For 80km transmission of Gigabit Ethernet (1.25Gbit/s) and Fibre Channel (1.0625Gbit/s).
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HTR8511
TE04-01-58-9043H
25Gbit/s)
0625Gbit/s)
EN60825-1
1550nm
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Abstract: No abstract text available
Text: HMC473MS8 / 473MS8E v01.1105 ATTENUATORS - SMT 5 GaAs MMIC VOLTAGE VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Typical Applications Features The HMC473MS8 / HMC473MS8E is ideal for: RoHS Compliant Product • Cellular, UMTS/3G Infrastructure Single Positive Voltage Control: 0 to +3V
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HMC473MS8
473MS8E
HMC473MS8E
HMC173MS8
HMC473MS8
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panasonic variable capacitor
Abstract: H473 hmc473ms8e Analog Voltage Variable Attenuator
Text: HMC473MS8 / 473MS8E v01.1103 GaAs MMIC VOLTAGE VARIABLE ATTENUATOR, 0.45 - 2.2 GHz ATTENUATORS - SMT 9 Typical Applications Features The HMC473MS8 / HMC473MS8E is ideal for: RoHS Compliant Product • Cellular, UMTS/3G Infrastructure Single Positive Voltage Control: 0 to +3V
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HMC473MS8
473MS8E
HMC173MS8
HMC473MS8E
HMC473MS8
330pF
10KpF
panasonic variable capacitor
H473
Analog Voltage Variable Attenuator
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10kpf capacitor
Abstract: HMC473MS8E capacitor 10kpf H473 microwave panasonic 3 pins Variable resistor 10K ohm Variable resistor 10K ohm Voltage Controlled Attenuator AD822 D-35
Text: HMC473MS8 / 473MS8E v01.1105 GaAs MMIC VOLTAGE VARIABLE ATTENUATOR, 0.45 - 2.2 GHz ATTENUATORS - SMT 5 Typical Applications Features The HMC473MS8 / HMC473MS8E is ideal for: RoHS Compliant Product • Cellular, UMTS/3G Infrastructure Single Positive Voltage Control: 0 to +3V
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HMC473MS8
473MS8E
HMC473MS8E
HMC173MS8
HMC473MS8
10kpf capacitor
capacitor 10kpf
H473
microwave panasonic
3 pins Variable resistor 10K ohm
Variable resistor 10K ohm
Voltage Controlled Attenuator
AD822
D-35
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5W 6.8 ohm k ceramic resistor
Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm
Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is
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SD2922
SD2922
5W 6.8 ohm k ceramic resistor
5W 47 ohm J ceramic resistor
Variable resistor 10K ohm
MARCON NH capacitor
GC812
neosid* 10k
mount chip transistor 13W
SME63T10RM
variable RESISTANCE 1 M OHM
resistor 560 ohm
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5W 6.8 ohm k ceramic resistor
Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r
Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is
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SD2922
SD2922
5W 6.8 ohm k ceramic resistor
5W 47 ohm J ceramic resistor
Variable resistor 10K ohm
MARCON NH capacitor
FAIR-RITE 2743021447
UT141-25
GRM43-4X7R-104K500
diode L2.70
C22-C23
GRM43-4X7r
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Variable resistor 10K ohm potentiometer
Abstract: Variable resistor 50K ohm
Text: o Increment/Decrement _ DUAL Dgital Potentiometer Prel i mi nary Technical Data AD5222 FEATURES 128 P osition, 2 C hannel P otentiom eter R eplacem ent 10K, 5 0 K, 100K, 1M Ohm V ery Low Power - 40 |iA Max ±2.7V Dual S upply O peration OR
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AD5222
AD5222
128-position,
0118l
Variable resistor 10K ohm potentiometer
Variable resistor 50K ohm
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lot date code panasonic
Abstract: lot date code panasonic Resistor lm 825
Text: WL M V HMC173MS8 MICROWAVE CORPORATION K aAs MMIC VOLTAGE VARIABLE ATTENUATOR 800- FEBRUARY 1998 Features General Description SINGLE POSITIVE VOLTAGE CONTROL: 0 to +3V The HMC173MS8 is a miniature absorp tive voltage variable attenuator in an 8- HIGH ATTENUATION RANGE:
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HMC173MS8
HMC173MS8
lot date code panasonic
lot date code panasonic Resistor
lm 825
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MARCON NH capacitor
Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead
Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is
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OCR Scan
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PDF
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SD2922
SD2922
PCI2170
020876A
MARCON NH capacitor
UT141-25
neosid* 10k
UT-141-25
4.7kohm trimmer
RG316-25
mount chip transistor 13W
diode L2.70
ferrite core shield transformer pin connection
vk200 ferrite bead
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