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WEE V23134J0052X511-EV-CBOX Automotive Relays V23134J0052X51
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	V23134J0052X511-EV-CBOX	Tray	190		20	1 - 10 - 100 $9.55 1000 $9.55 10000 $9.55	Buy Now
TE Connectivity V23134A4064X551-EV-CBOX RELAY GEN PURPOSE SPDT 60A 24V
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DigiKey	V23134A4064X551-EV-CBOX	Bulk	53		1	1 $25.6 10 $22.363 100 $20.3456 1000 $17.67289 10000 $17.67289	Buy Now
Mouser Electronics	V23134A4064X551-EV-CBOX		103			1 $24.63 10 $23.4 100 $20.93 1000 $18.47 10000 $18.47	Buy Now
Sager	V23134A4064X551-EV-CBOX					1 - 10 - 100 - 1000 - 10000 -	Buy Now
TE Connectivity V23074H1005A502-EV-CBOX V23074 Series High Current Micro Relay with Resistor Suppression 1-Form A 1 NO 12 VDC 144 Ohm 1 W Silver Based Contact - Bulk (Alt: 4-1904124-4)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	V23074H1005A502-EV-CBOX	Bulk		10 Weeks, 2 Days	480	1 - 10 - 100 - 1000 $3.11566 10000 $3.03438	Buy Now
Mouser Electronics	V23074H1005A502-EV-CBOX		947			1 $6.29 10 $6.06 100 $4.36 1000 $3.59 10000 $3.59	Buy Now
Newark	V23074H1005A502-EV-CBOX	Bulk			480	1 - 10 - 100 - 1000 $3.89 10000 $3.89	Buy Now
TE Connectivity V23136A0004X086-EV-CBOX Automotive Relays V23136A0004X086-EV- CBOX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	V23136A0004X086-EV-CBOX		850			1 $10.25 10 $9.61 100 $7.69 1000 $6.4 10000 $5.97	Buy Now
Sager	V23136A0004X086-EV-CBOX		882		294	1 - 10 - 100 - 1000 $6.82 10000 $6.82	Buy Now
TE Connectivity V23136J1004X050-EV-CBOX Automotive Relays Power Relay F A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	V23136J1004X050-EV-CBOX		277			1 $10 10 $9.62 100 $9 1000 $7.5 10000 $7	Buy Now

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VCBO Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage Unit: mm : VCBO = 1700 V z Low Saturation Voltage : VCE sat = 3 V (Max.)	Original	PDF	2SC5446 2-21F2A
Untitled Abstract: No abstract text available Text: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V	Original	PDF	2SA1384 2SC3515
marking C15 Abstract: smd MARKING c17 2sa1612 MARKING SMD PNP TRANSISTOR V5090 smd transistor marking c17 Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA1612 Features High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -120 V Collector to emitter voltage VCEO -120	Original	PDF	2SA1612 -120V, -10mA marking C15 smd MARKING c17 2sa1612 MARKING SMD PNP TRANSISTOR V5090 smd transistor marking c17
MARKING SMD PNP TRANSISTOR F8 Abstract: transistor f8 MARKING SMD PNP TRANSISTOR BF824W marking f8 Text: Transistors IC SMD Type PNP Medium Frequency Transistor BF824W Features Low current max. 25 mA . Low voltage (max. 30 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage	Original	PDF	BF824W MARKING SMD PNP TRANSISTOR F8 transistor f8 MARKING SMD PNP TRANSISTOR BF824W marking f8
2sd2581 Abstract: 2SD2581 equivalent NPN Transistor 8A NPN Transistor 1500V Horizontal Deflection Switching Transistors horizontal transistor Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)	Original	PDF	2SD2581 2sd2581 2SD2581 equivalent NPN Transistor 8A NPN Transistor 1500V Horizontal Deflection Switching Transistors horizontal transistor
BCX53 Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16 Text: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60	Original	PDF	BCX51 BCX52 BCX53 BCX52 BCX51 BCX51-16 BCX53 marking AE smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
2SC1617 Abstract: npn transistors 300V 0,5a 250V 100MA NPN Text: Inchange Semiconductor Product Specification 2SC1617 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage: VCBO min :300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications PINNING(see fig.2)	Original	PDF	2SC1617 100mA; 2SC1617 npn transistors 300V 0,5a 250V 100MA NPN
2SB1119 Abstract: No abstract text available Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25	Original	PDF	2SB1119 -500mA -50mA 2SB1119
SMD TRANSISTOR MARKING Dd Abstract: SMD TRANSISTOR MARKING DE MARKING SMD NPN TRANSISTOR BR SMD TRANSISTOR MARKING BR 2SD1419 Text: Transistors SMD Type NPN Silicon epitaxial Transistor 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage	Original	PDF	2SD1419 SMD TRANSISTOR MARKING Dd SMD TRANSISTOR MARKING DE MARKING SMD NPN TRANSISTOR BR SMD TRANSISTOR MARKING BR 2SD1419
BD transistor Abstract: smd marking BD 2SB1189 BD marking Text: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80	Original	PDF	2SB1189 -500mA -50mA 100MHz BD transistor smd marking BD 2SB1189 BD marking
2SD917 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification 2SD917 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNING	Original	PDF	2SD917 2SD917
SMD TRANSISTOR MARKING BR Abstract: 2SC5209 marking RH Text: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO	Original	PDF	2SC5209 100mA 500mA -10mA SMD TRANSISTOR MARKING BR 2SC5209 marking RH
2SD1418 Abstract: MA1060 Text: Transistors SMD Type Silicon NPN Epitaxial 2SD1418 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO	Original	PDF	2SD1418 2SD1418 MA1060
BF822W Abstract: No abstract text available Text: Transistors SMD Type NPN High-Voltage Transistor BF822W Features Low current max. 50 mA High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V	Original	PDF	BF822W 100MHz BF822W

2N5401G Abstract: No abstract text available Text: 2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 150 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage	Original	PDF	2N5401 2N5401/D 2N5401G
bc640-016g Abstract: 016G Text: BC640-016G High Current Transistors PNP Silicon Features • This is a Pb−Free Device http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage	Original	PDF	BC640-016G BC640/D 016G
2sc3892a Abstract: 2Sc3892a equivalent 2SC3892 c 1173 Text: 2SC3892A SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. Unit in mm . High Voltage : VcBO ^1500V I 5 . 5 i 0.5 . 0 3 .6± 0.3 3.0 ± 0 .3 . High Speed Switching Resistive Load tf=0.2ys(Typ.) . Collector Metal is Fully Covered with Mold Resin.	OCR Scan	PDF	2SC3892A 1173-Y 2sc3892a 2Sc3892a equivalent 2SC3892 c 1173
2SC994 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO	OCR Scan	PDF	2SC994 l75MHz, 100mA 175MHz, -30pF 175MHZ 2SC994
2N5551 Abstract: No abstract text available Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage	OCR Scan	PDF	2N5551 100MHz 2N5551
2SC4830 Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC4830 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. Unit in mm HIGH SPEED SWITCHING POWER SUPPLY OUTPUT APPLICATIONS. 3.0±0.3 15-5i 0.5 0 3.6±0.3 . High Speed : tf=0.15*is Typ. . High Voltage : VcBO=15C)OV	OCR Scan	PDF	2SC4830 15-5i 2SC4830
2SD1554 Abstract: 2sd1554 equivalent TOSHIBA DIODE GLASS MOLD 00l3 Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1554 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES: . High Voltage l&5±0t5 >3.6±aS : VCBO=1500V S.0±0l3 . Low Saturation Voltage: VcE sat =5V(Typ.)(Ic=3A,Ib =0.8A) . High Speed : tf = 1. 0\|is(Max.) (I(;p=3A, lBl(end)=0.8A)	OCR Scan	PDF	2SD1554 200mA, 2SD1554 2sd1554 equivalent TOSHIBA DIODE GLASS MOLD 00l3
C475 Abstract: 2SC4757 C4757 Text: 2SC4757 SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. HIGH SPEED SWITCHING POWER SUPPLY OUTPUT APPLICATIONS. Unit in mm 1 5 .5 ± 0.5 . High Speed :tf=0.15Ms Typ. . High Voltage :VcBO= 1500V . Low SaturationVoltage	OCR Scan	PDF	2SC4757 C475 2SC4757 C4757
2-16C1A Abstract: No abstract text available Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 5 5 8 U nit in mm POWER AMPLIFIER APPLICATIONS 15 9 V i A X • • )S3.2 ♦ 0.2 High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2SD2387 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO	OCR Scan	PDF	--140V 2SD2387 100fl -140V --50mA, --12A 2-16C1A
Untitled Abstract: No abstract text available Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO	OCR Scan	PDF	2SA1899 2SC5052. ----120V, --10mA, --100mA --500mA, --50mA

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VCBO Search Results

VCBO Price and Stock

WEE V23134J0052X511-EV-CBOX

TE Connectivity V23134A4064X551-EV-CBOX

TE Connectivity V23074H1005A502-EV-CBOX

TE Connectivity V23136A0004X086-EV-CBOX

TE Connectivity V23136J1004X050-EV-CBOX

VCBO Datasheets Context Search

Untitled

Untitled

marking C15

MARKING SMD PNP TRANSISTOR F8

2sd2581

BCX53

2SC1617

2SB1119

SMD TRANSISTOR MARKING Dd

BD transistor

2SD917

SMD TRANSISTOR MARKING BR

2SD1418

BF822W

2N5401G

bc640-016g

2sc3892a

2SC994

2N5551

2SC4830

2SD1554

C475

2-16C1A

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