Untitled
Abstract: No abstract text available
Text: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.
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GT10J301
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Untitled
Abstract: No abstract text available
Text: GT20J311 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V qe (sat) = 2-7V (Max.)
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GT20J311
30//s
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333S
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO ¿ToJhìiu Dlf| T D T 7 E S 0 ODltjHbQ 4 f "TD 90D 16260 SEMICONDUCTOR UF-33-3f M G 1 0 0 G 1 J L 1 M G 1 0 0 G 2 C L 1 TECHNICAL DATA M G 1 0 0 G 2 D L 1 -0E¡> d cs W eight : 205g U n it in mm NVJvrWT
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UF-33-3f
00Itati
MG100G2DL1
333S
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)
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2SD1314
VCC-300V
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Untitled
Abstract: No abstract text available
Text: T O SH IB A GT10J301 GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1 5 .9 M A X The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max. Low Saturation Voltage. : V qe (sat) = 2-7V (Max.)
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GT10J301
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Untitled
Abstract: No abstract text available
Text: 2MBI200LB-060 2 ooa : Outline Drawings IG B T ^ E ^ a — ;i/ IGBT MODULE Features • H ig h • te fiS in ttE Low S p e e d S w it c h in g S a tu r a tio n V o lt a g e • S A i l - i r — f- i £ t i t ( M O S ^ — H 8 i a ) • ^ ¿ *3 . — ju ;< 'y S r —
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2MBI200LB-060
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Untitled
Abstract: No abstract text available
Text: 1DI300MP-050 300A : Outline Drawings ' < r7 - b ? it. PO W ER T R A N S IS T O R M O D U LE .h ai -,-ia-rJO-, •iNHS: : Features • h p E ^ 'S u High DC Current Gain B • Js iS W S iS liE ^ J^ : Applications >'< —$ • i/lffl'f General Purpose Inverter
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1DI300MP-050
E82988
l95t/R89
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3210A
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES | QM50TX-HB j MEDIUM POWER SWITCHING USE ¡ INSULATED TYPE ! QM50TX-HB • Ic • V cex • hFE Collector current. 50A Coliector-emitter voltage.600V DC current gain. 750
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QM50TX-HB
QM50TX-HB
E80276
E80271
3210A
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Untitled
Abstract: No abstract text available
Text: MG150J1ZS50 U nit in mm HIGH P O W E R SW ITC H IN G APPLICA TIO N S. M O T O R C O N T R O L A PPLICA TIO N S. 2-FAST-ON-TAB »110 • • The Electrodes are Isolated from Case. High Input Impedance • Enhancement-M ode High Speed : tf= 0.30/iS Max. (Iç = 150A)
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MG150J1ZS50
30/iS
15//s
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MG400H1UL1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Whe-eling Diode . High DC Current Gain : hFE=80 Min. (IC=400A) . Low Saturation Voltage
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MG400H1UL1
00A/iis
MG400H1UL1
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TLP559
Abstract: MIG300J101H
Text: TOSHIBA M IG300J101H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT M I G 3 0 0 J 1 01 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over Temperature in One Package.
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MIG300J101H
2-121A1A
961001EAA1
40-ai
TLP559
MIG300J101H
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MIG200J201H
Abstract: TLP559
Text: TOSHIBA MIG200J201H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG200J201H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.
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MIG200J201H
2-136A1A
961001EAA1
MIG200J201H
TLP559
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QM30DY-H
Abstract: QM30DY-HB
Text: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M30DY-HB • • • • • Ic Collector current. 30A Vcex Collector-emitter voltage. 600V hFE DC current gain. 750
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QM30DY-HB
M30DY-HB
E80276
E80271
Vcc-300V
QM30DY-H
QM30DY-HB
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6DI50B-050
Abstract: No abstract text available
Text: 6DI50B-050 50A [s ^ ^ ^ ; ± '* 7 a. - '• Outline Drawings POWER TRANSISTOR MODULE ■ i t i ! : Features ;fc-f ij ;✓ ?’?'•<+ — KrtSK my • hFE*'' '-' • iSfeSStJK Including Free Wheeling Diode High DC Current Gain Insulated Type ■ f f lii : Applications
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6DI50B-050
E82988
B-160
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Untitled
Abstract: No abstract text available
Text: TO SHIBA GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20JB11 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V qe (sat) = 2-7V (Max.)
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GT20J311
GT20JB11
30//s
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 15.9MAX The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V qe (sat) = 2-7V (Max.)
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GT20J301
30//s
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toroid FT10
Abstract: toroid core
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45* BUL45F* D esigner’s Data Sheet •Motorola Profwnd Devi«» NPN S ilico n P o w er TVansistor POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS High Voltage SWITCHMODE™ Series Designed for use in electronic ballast light ballast and In Switchmode Power
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BUL45*
BUL45F*
BUL45F,
E69369
AN1040.
toroid FT10
toroid core
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GT30J301
Abstract: No abstract text available
Text: GT30J301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)
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GT30J301
GT30J301
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Untitled
Abstract: No abstract text available
Text: TOSHIBA M IG400J101H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT M I G 4 0 0 J 1 01 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over Temperature in One Package.
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IG400J101H
2-121A1A
961001EAA1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA M IG300J101H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT M I G 3 0 0 J 1 01 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over Temperature in One Package.
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IG300J101H
2-121A1A
961001EAA1
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D 1414 transistor
Abstract: No abstract text available
Text: 3SE D POUEREX INC m u a t E • 75^21 0G0M4Û2 ö H P R X KMG24501HB X Pow erex, In c ., Hlllls Street, Youngwood, Pennsylvania 75697 4 1 2 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 4 1 .14.14 Diode Bridge Input,
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KMG24501HB
BP107,
Amperes/600
24501H
D 1414 transistor
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mig20j902h
Abstract: mig20j902 120QN inverter mx 3000 a
Text: TOSHIBA INTEGRATED GTR MODULE MIG20J902H Unit in mm High Power Switching Applications 4-4.t:0.S »-2-M S0.5 Motor Control Applications • Integrates Inverter, Converter and Brake Power Circuits in One Package. • Output Inverter Stage : 302OA/6OOV High Speed Type IGBT
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302OA/6OOV
103OA/8OOV
0A/600V
MIG20J902H
2-91A1A
MIG20J902H
QG2054Ô
PW02150796
mig20j902
120QN
inverter mx 3000 a
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300G1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE^lOO Min. (Ic=300A) . Low Saturation Voltage
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MG300G1UL1
MG30061UL1
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Untitled
Abstract: No abstract text available
Text: I MITSUBISHI TRANSISTOR MODULES QM30CY-H I MEDIUM POWER SWITCHING USE ! _ INSULATED TYPE j OM30CY-H • 1C Collector cu rre n t. 30A • V cex C ollector-em itter vo lta g e . 600V • hFE DC current g a in .75
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QM30CY-H
OM30CY-H
E80276
E80271
QM30CY-H
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