100MHZ
Abstract: GPN2222A GPN2907A
Text: ISSUED DATE :2003/12/15 REVISED DATE :2004/11/29B GPN2907A P NP EP ITAXI AL P L ANAR T RANS ISTO R Description The GPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications Features *Low Collect Saturation voltage.
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2004/11/29B
GPN2907A
GPN2907A
GPN2222A.
100MHZ
GPN2222A
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PA0016
Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30
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14-dagar
PA0016
STR11006
SO41P
PIONEER PA0016
7 segment to bcd converter 74c915
SAJ141
74HC145
tms1122
IC PA0016
KOR 2310 transistor
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2N2901
Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Text: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,
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2N2907A
2N2907,
2N2907A,
PN2907,
PN2907A
2N2222,
2N2222A,
PN2222,
PN2222A
2N2901
npn 2907a EBC
2N2907
FN2907
PH2907
2N2222
2N2907A
LB-15N
PN2907
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Untitled
Abstract: No abstract text available
Text: TO S H I B A HSE D DISCRETE/OPTO • T Q T 7 E 5 D DDlflODD T « T O S M TOSHIBA TRANSISTOR - YTS3904 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Carrent : IcEV“50nA(Max.), IgEV^SOnAiMax.)
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YTS3904
SC-59
f-10Hz-15
300ne
ln1N916
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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JF6107
2N6107
E69369,
221D-02
O-220
AN1040.
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2N2905A
Abstract: No abstract text available
Text: cs-o 2N/PN2904A 2N/PN2905A 2N/PN2904A & 2N/PN2905A are PNP silicon planar epitaxial transistors. "PNP SILICON TRANSISTORS TO-39 It is intended T0-92A Jpj for high speed medium power switching and general purpose amplifier applications. C B E ABSOLUTE MAXIHUM RATINGS
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2N/PN2904A
2N/PN2905A
2N/PN2904A
2N/PN2905A
T0-92A
PN2904A
PN2905A
600mA
2N2904A
2N2905A
2N2905A
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Untitled
Abstract: No abstract text available
Text: KSC326S NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER SOT-23 • Complement to KSA1298 ABSOLUTE MAXIMUM RATINGS T a- 2 5 ,C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation
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KSC326S
KSA1298
OT-23
KSD261
Vce-30V.
lc-100m
800mA
500mA,
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hx- je
Abstract: No abstract text available
Text: 2N/PN2904A 2N/PN2905A ¡v' 'PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP s il icon planar epitaxial transistors. TO-39 T0-92A It is intended for high speed medium power switching and general purpose amplifier applications. ! ABSOLUTE MAXIMUM RATINGS
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2N/PN2904A
2N/PN2905A
2N/PN2905A
T0-92A
2N2904A
2N2905A
PN2904A
PN2905A
150mA
hx- je
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 4SE D • ^0=17250 O a i T ^ S 1 «TOSM TOSHIBA YTQ9QÍ17 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) YTSZ907 FOR HIGH-SPEED SWITCHING USE DC TO VHF AMPLIFIER APPLICATIONS AND
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YTSZ907
500mA
200MHz
-500mA,
-50mA
YTS2222
Ta-25Â
VCE--10V,
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2N2906
Abstract: 2N2906A PN2221 2N2221 2N2221A 2N290 PN2221A PN2906 PN2906A
Text: 2N2906 • 2N2906A PN 2906 ■ PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPESI-' SWITCHING APPLICATIONS. THEY ARE
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2N290Ã
2N2906A
PN2906A
2N2906,
2N2906A,
PN2906,
COMPLEMEN171ARY
2N2221
2N2221A,
2N2906
PN2221
2N2221
2N2221A
2N290
PN2221A
PN2906
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Untitled
Abstract: No abstract text available
Text: CRO 2N 2907 2N 2 9 07A PN 2907 PN2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.
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PN2907A
2N2907,
2N2907A,
PN2907,
PN2907A
2N2222,
2N2222A,
PN2222,
PN2222A
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YTS3904
Abstract: YTS3906
Text: TOSHIBA TRANSISTOR YTS3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES : . Low Leakage Current : !cEV*50nA(Max.), lBEV*50aA(Max.) <3 V c e -30V, V BE-3V . Excellent DC Current Gain Linearity
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YTS3904
YTS3906
SC-59
Ta-25
VCE-20V,
IC-10mA
f-100MHz
20per*
YTS3904
YTS3906
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2sc144
Abstract: 2SC1446
Text: 2 S C 1 4 4 6 NPN zzXSsXrJ- U—"^SH /Si NPN Triple Diffused Planar B^ifijS^S^ffl^ffl/Line-Operated AF Amplifier *7 ^ ^/Chrominance Output Unit *mm 11.5max. Sfr/Features 4. 8max. 1. 5max. • A8fc lfi“C 1W O iiiiJ ^ i|^ > ix tvi ‘o /lW output in class-A operation
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2SC1446
Ic-10mA
100mA,
2sc144
2SC1446
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