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    BA7T

    Abstract: tamagawa C259C GET-BC-0004 bc 8122 LDS100 high temperature reverse bias
    Text: F RO M 2002Í S B <*> 1 9 : 2 9 / f B I 9 : 2 3 / X » S ^ E 5 0 2 4 Í 4 6 S 2 IMEC G E T —B C — 0 0 0 4 1/20 NEC Corporation T am agaw a P la n t 1763, S h im o m im ab e, N akahara-iku Kawasaki , Kanagawa 211-8661> Q u a l i f i c a t ion Test Report


    OCR Scan     		PDF 29/M1 23/XtH5 GET-BC-0004 NE292series February20, NE292series. NE292series 337cC 0x10a BA7T tamagawa C259C bc 8122 LDS100 high temperature reverse bias

    6681 - 250

    Abstract: 2686 0112
    Text: HEXAWAVE HWL27NPB Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL27NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.


    OCR Scan     		PDF HWL27NPB HWL27NPB 200mA 6681 - 250 2686 0112

    FSX51

    Abstract: fujitsu gaas fet fsx51x S3V 05 S3V 03
    Text: FSX51X/011 FSX51LG/001 G aAs FET FEATURES • • • • • High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability APPLICATIONS The front end of an optical receiver in high speed application. DESCRIPTION The FSX51X/011 Chip and FSX51 LG/001 packaged devices are GaAs


    OCR Scan     		PDF FSX51X/011 FSX51LG/001 FSX51 LG/001 FSX51LG/00J 51X/01 fujitsu gaas fet fsx51x S3V 05 S3V 03