VERTICAL PNP BJT Search Results

VERTICAL PNP BJT Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73128RHX/SAMPLE	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency PNP Transistor Array
ISL73096RHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RHX/SAMPLE	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

VERTICAL PNP BJT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Drive Base BJT Abstract: vertical pnp bjt Semiconductor Group igbt the calculation of the power dissipation for the IGBT Text: APPLICATION NOTE AN INTRODUCTION TO IGBTS by M. Melito, A. Galluzzo INTRODUCTION In the low and medium power range, Bipolar Junction Transistors BJTs have up to now been the most commonly used power semiconductors, and they still hold a large part of	Original	PDF
power BJT PNP Abstract: BJT pnp 45V vertical mosfet Text: SYNC POWER CORP. Technical Review of P-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN001 1 Measuring P-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3	Original	PDF	AN001 power BJT PNP BJT pnp 45V vertical mosfet
CMOS Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate	Original	PDF	XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
AN002 Abstract: "curve tracer" ZERO VOLTAGE SWITCH Text: SYNC POWER CORP. Technical Review of N-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN002 1 Measuring N-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3	Original	PDF	AN002 AN002 "curve tracer" ZERO VOLTAGE SWITCH
vertical pnp bjt Abstract: 1000 hz cmos Image Sensors CMOS Process Family XO035 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes Text: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XO035 Modular CMOS Technology For Fast Optical Applications XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. Module Overview CORE MOS It is especially suited for applications needing	Original	PDF	XO035 XO035 405nm 650nm vertical pnp bjt 1000 hz cmos Image Sensors CMOS Process Family 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes
rpp1k1 Abstract: No abstract text available Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate	Original	PDF	XT018 XT018 18-micron rpp1k1
XH035 Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	PDF	XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
CMOS spice model Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	PDF	XH035 XH035 35-micron CMOS spice model MOS RM3 Spice model inductor BSIM3v3.2 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library
TRANSISTOR REPLACEMENT GUIDE Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE TI5001 ZTX869 replacement ztx500 equivalent ZTX1048A 2n3904 TRANSISTOR REPLACEMENT ztx107 ZTX790A LM3578 Text: Application Note 22 Issue 1 May 1996 High Frequency DC-DC Conversion using High Current Bipolar Transistors 400kHz Operation with Optimised Geometry Devices Neil Chadderton Dino Rosaldi Introduction DC-DC conversion is o n e o f t h e fundamental circuit functions within the	Original	PDF	400kHz ZTX618 ZTX717 ZTX718 ZTX849 TRANSISTOR REPLACEMENT GUIDE 2n3904 TRANSISTOR REPLACEMENT GUIDE TI5001 ZTX869 replacement ztx500 equivalent ZTX1048A 2n3904 TRANSISTOR REPLACEMENT ztx107 ZTX790A LM3578
Untitled Abstract: No abstract text available Text: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to	Original	PDF	XA035 XA035 35-micron
XH035 library Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3 Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and	Original	PDF	XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3
mos rm3 data Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and	Original	PDF	XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
An Introduction to IGBT Operation Abstract: AN4503 IGBT EQUIVALENT AN4503-4 static characteristics of mosfet and igbt n mosfet depletion mosfet 1500v MOS Controlled Thyristor Text: AN4503 Application Note AN4503 An Introduction To IGBT Operation Application Note Replaces September 2000 version, AN4503-4.0 AN4503-4.1 July 2002 The power semiconductor devices available on the market can be categorised into three groups viz., can be grown and so this type of structure is limited to voltages	Original	PDF	AN4503 AN4503 AN4503-4 An Introduction to IGBT Operation IGBT EQUIVALENT static characteristics of mosfet and igbt n mosfet depletion mosfet 1500v MOS Controlled Thyristor
Untitled Abstract: No abstract text available Text: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with	Original	PDF

CMOS Process Family Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single	Original	PDF	XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library
bsim3 0.18 micron parameters Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	PDF	XH018 XH018 18-micron bsim3 0.18 micron parameters bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width
FET pair n-channel p-channel Abstract: P-Channel Depletion-Mode MOSFET Text: An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant	Original	PDF
XH018 Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	PDF	XH018 XH018 18-micron sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model
XH035 Abstract: No abstract text available Text: 0.35 m Process Family: XH035 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions DESCRIPTION The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and	Original	PDF	XH035 XH035 35-micron
MOS RM3 Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well" Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing	Original	PDF	XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
MOS RM3 Abstract: No abstract text available Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing	Original	PDF	XO035 XO035 35-micron MOS RM3
XP018 Abstract: No abstract text available Text: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single	Original	PDF	XP018 XP018 18-micron
reverse phase control igbt dimmer schematic Abstract: SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor Text: AN1491 APPLICATION NOTE IGBT BASICS M. Aleo [email protected] 1. INTRODUCTION. IGBTs (Insulated Gate Bipolar Transistors) combine the simplicity of drive and the excellent fast switching capability of the MOSFET structure with the ability to handle high current values typical of a	Original	PDF	AN1491 1980s, 130kHz. reverse phase control igbt dimmer schematic SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor
Untitled Abstract: No abstract text available Text: RAYTHEON/ SEMICONDUCTOR 11E D \| 75^731,0 QQDt.aH 0 \| Linear Custom 1C Design Services and Manufacturing _ Thin-Film Sputtering Options Foundation Processes Ion Implant and Metal Options JFET Transistors Thin-Film Resistors	OCR Scan	PDF	24-lead 350x175 28-lead 40-lead 310x310 14-lead 16-lead 110x140 20-lead

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VERTICAL PNP BJT Search Results

VERTICAL PNP BJT Result Highlights (5)

VERTICAL PNP BJT Datasheets Context Search

Drive Base BJT

power BJT PNP

CMOS

AN002

vertical pnp bjt

rpp1k1

XH035

CMOS spice model

TRANSISTOR REPLACEMENT GUIDE

Untitled

XH035 library

mos rm3 data

An Introduction to IGBT Operation

Untitled

CMOS Process Family

bsim3 0.18 micron parameters

FET pair n-channel p-channel

XH018

XH035

MOS RM3

MOS RM3

XP018

reverse phase control igbt dimmer schematic

Untitled